TOSHIBA K2916 Search Results

TOSHIBA K2916 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT		Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A		Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

TOSHIBA K2916 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K2916 Abstract: 2SK2916 Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916 2SK2916	PDF
K2916 Abstract: TOSHIBA K2916 2SK2916 Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916 TOSHIBA K2916 2SK2916	PDF
K2916 Abstract: No abstract text available Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 K2916	PDF
2SK2916 Abstract: K2916 Text: 2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π–MOSV 2SK2916 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain–source ON resistance : RDS (ON) = 0.35 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 11 S (typ.)	Original	2SK2916 2SK2916 K2916	PDF
K2916 Abstract: TOSHIBA K2916 2SK2916 Text: 2SK2916 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2916 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用単位: mm : RDS (ON) = 0.35Ω (標準) z オン抵抗が低い。	Original	2SK2916 10VID 2-16F1B K2916 2002/95/EC) K2916 TOSHIBA K2916 2SK2916	PDF
K2916 Abstract: No abstract text available Text: TOSHIBA 2SK2916 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2916 IGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 15.8±0.5 • • •	OCR Scan	2SK2916 K2916	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SK2916 T O SH IB A FIELD EFFECT TR A N SISTO R SILICO N N C H A N N E L M OS T Y P E tt-M O S V 2SK2916 IGH SPEED, HIGH V O LT A G E SW ITCH IN G A PP LIC A TIO N S D C-D C CO N V ER TER , R E LA Y DRIVE A N D M O TO R DRIVE A PP LIC A TIO N S	OCR Scan	2SK2916	PDF