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    TOSHIBA TC110G Search Results

    TOSHIBA TC110G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TC110G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC17G Series

    Abstract: 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell
    Text: TOSHIBA ASIC TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. CMOS GATE ARRAY TC1TOGSERESGITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI


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    PDF TC110G TC17G TC17G Series 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell

    toshiba tc110g

    Abstract: toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC17G TC110G21 TC110G38 VLSI TECHNOLOGY
    Text: ASIC TOSHIBA TOSHIBA AMERICA ELECTRONIC COMPONENTS, IIMC. CMOS GATE ARRAY TCllOG SERIES GITE ¿RRAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI


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    PDF TC110G TC17G toshiba tc110g toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC110G21 TC110G38 VLSI TECHNOLOGY

    STK 407 040

    Abstract: toshiba tc110g toshiba tc17g STK 407 240 TC17G Series CMOS GATE ARRAYs toshiba TC110G08 LU 2705 TC17G sw 44585
    Text: Mar. ’88 Version 3 TOSHIBA CMOS GATE ARRAY TC1XDG SERIESSITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC 2MOS/VLSI technologies. State of the art processing with high


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    PDF TC110G TC17G TC110G J22587 GA-E-S109-3/88 88-3-AC STK 407 040 toshiba tc110g toshiba tc17g STK 407 240 TC17G Series CMOS GATE ARRAYs toshiba TC110G08 LU 2705 sw 44585

    Untitled

    Abstract: No abstract text available
    Text: Mar. 88 Version 3 TOSHIBA CMOS GATE ARRAY O O G SKIES GITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI technologies. State of the art processing with high


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    PDF TC110G TC17G J22587 4503C GA-E-S109-3/88

    tc140g

    Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
    Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.


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    PDF TC140G 167th MAS-0097/3-92 TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18

    TC150GC8

    Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
    Text: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.


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    PDF TC150GCMOS TC150G TC110G, TC120G TC140G wo220 MAS-0062/3-90 TC150GC8 TC150GH2 toshiba tc110g toshiba tc140g TC110G TC150G89 toshiba toggle nand

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.


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    PDF 1C120G TC120G MA01803 MAS-0053/6-89

    siemens master drive circuit diagram

    Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
    Text: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m


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    PDF TC110G M33S004 siemens master drive circuit diagram SR flip flop IC toshiba tc110g jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.


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    PDF TC150G TC110G, TC120G TC140G MAS-0062/3-90

    TC140G44

    Abstract: TC140G27 toshiba tc140g
    Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to


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    PDF TC140G MAS-0097/3-90 TC140G44 TC140G27 toshiba tc140g

    toshiba tc110g

    Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
    Text: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high­


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    PDF 1C120G TC120G Suite205 CA92680 MA01803 5555Triangle MAS-0053/6-89 toshiba tc110g CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0

    74HC inverter tri-state output

    Abstract: TC140G toshiba tc110g TC14L010 74HC buffer tri-state output bt12 74hc* open drain buffer FP144 TC11L003 TC110G
    Text: TOSHIBA ASIC TO SH IB A A M ER ICA E LE C T R O N IC CO M PO N EN TS, INC. IEC 1 4 1990 TC11L CMOS Gate Array TC14L CMOS Gate Array These tw o gate array fam ilies provide a unique solution for designs which have a high ratio of pin count to gates. T oshiba’s optim ized assem bly tech n o lo g y allow s the use of


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    PDF TC11L TC14L 64-bit MAS-0095/9-90 74HC inverter tri-state output TC140G toshiba tc110g TC14L010 74HC buffer tri-state output bt12 74hc* open drain buffer FP144 TC11L003 TC110G

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


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    PDF J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576

    Robinson Nugent CATALOG

    Abstract: MC68461 SAB80286 WE32104 Z80000 IMST414 FGE2000 MCA2800ALS 82786 intel TC110G
    Text: T Circuit C o m p o n en ts Inc. r MicrofQ 3000 PGA Decoupling Capacitors Micro/Q 3000 ceramic capacitors are a family of very low inductance decoupling capacitors specifically designed to be through-hole mounted under pin grid arrays PGAs , PGA sockets, and


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    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


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