TOSHIBA THYRISTORS Search Results

TOSHIBA THYRISTORS Result Highlights (5)

Part	Manufacturer	Description
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
74HC4053FT	Toshiba Electronic Devices & Storage Corporation	CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
TCR5RG28A	Toshiba Electronic Devices & Storage Corporation	LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F

TOSHIBA THYRISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mosfet 600V 20A Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera Text: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce	Original	releases/2008/power mosfet 600V 20A L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera	PDF
Untitled Abstract: No abstract text available Text: 9097250 TOSHIBA < D IS C R E T E / O P T O > 39C 0 2 3 5 7 0 7 TH YRISTO R STACK BRIDGE S T A CK TOSHIBA íD IS CRETE/O PTOJ 1. STUD TYPE THYRISTOR STACK 3T D E § T G T 7 2 5 D D0DE 3S7 M \| SINGIE-PHASE BRIDGE W ITH 2 THYRISTORS ON LINE COM MON AC SFR300L4BB1, SFR300U4BB2	OCR Scan	SFR300L4BB1, SFR300U4BB2 SFR300L4BB1 SFR300U4BB2 20-V/440-V	PDF
induction cooker fault finding diagrams Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200 Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when	Original	Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200	PDF
TPCT4203 Abstract: On semiconductor power MOSFET reliability report battery toshiba toshiba cmos memory camera TPCT4204 TPCP8202 Text: TOSHIBA ANNOUNCES LOW ON-RESISTANCE POWER MOSFETS FOR LITHIU. Page 1 of 2 TOSHIBA ANNOUNCES LOW ON-RESISTANCE POWER MOSFETS FOR LITHIUM ION BATTERIES IN SMALLER, SECOND-GENERATION SMART THIN PACKAGE Power MOSFETs in STP2 Package Series Are 20 Percent Smaller with Very Low ONResistance to Improve Lithium Ion Battery Efficiency	Original	releases/2008/powr TPCT4203 On semiconductor power MOSFET reliability report battery toshiba toshiba cmos memory camera TPCT4204 TPCP8202	PDF
Toshiba TMPA8873 Abstract: TC94A70FG tmpa8873 tb2926hq TB2926 TB1318FG toshiba 8891 tmp*a8873 5252 F led driver tb1307fg Text: 2008-9 TOSHIBA SEMICONDUCTOR Application Guide s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g This brochure introduces Toshiba’s semiconductor solutions for a variety of applications. TV Solutions Display Devices	Original	SCE0015B E-28831 SCE0015C Toshiba TMPA8873 TC94A70FG tmpa8873 tb2926hq TB2926 TB1318FG toshiba 8891 tmp*a8873 5252 F led driver tb1307fg	PDF
SM12LZ52 Abstract: SM16LZ52 SM8LZ52 triacs TO220-NIS new sis chip SM2L54 SM10LZ52 TO-220 Triac 16A 800V SM2G54 Text: 1 TRIACs February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Thyristors/Triacs DP0540038_01 2 New TRIAC Line up Main Characteristic Sample Mass-Pro Packege Schedule Product IT RMS Schedule Schedule VDRM ITSM(A) IGT (mA)	Original	DP0540038 SM2G54 O-126 SM2L54 O-220 SM8GZ52 SM8LZ52 SM10GZ52 SM10LZ52 SM12LZ52 SM16LZ52 SM8LZ52 triacs TO220-NIS new sis chip SM2L54 SM10LZ52 TO-220 Triac 16A 800V SM2G54	PDF
Untitled Abstract: No abstract text available Text: 9097250 TOSHIBA CDISCRETE/OPTO f h y k i s t Q R STACK AC POWER 39C 0 2 3 5 0 0 7- 2 5 W 7 CONTROL STACK) TOSHIBA {D IS CRETE/O PT0> 1. STUD T Y P t I M Y K l s i u n o m v / i \ SINGLE PHASE SF300J2H1, SF300Q2H2~ The SF300J2H1 and SF300Q2H2 series thyristor sta	OCR Scan	SF300J2H1, SF300Q2H2~ SF300J2H1 SF300Q2H2 20-V/440-V	PDF
Untitled Abstract: No abstract text available Text: 9097250 TOSHIBA DIS C R E T E / O P T O 39C 0 2 3 5 5 T H Y R IS T O R S T A C K (R R ID fìF D E I ^0^7550 0G0E3SS D \| - il TOSHIBA {DISCRETE/OPTO! 33 «TA C K ) 0*7^ 1. STUD TYPE STACK SINGLE-PHASE BRIDGE SF300L4B1, SF300U4B2 Tlte SF300L4B1 and SF300U4B2 series thyristor sta	OCR Scan	SF300L4B1, SF300U4B2 SF300L4B1 SF300U4B2 20-V/440-V	PDF
gate turn off thyristors Abstract: 500EXH21 800gxhh21 800exh21 Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that	OCR Scan	1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21	PDF
500EXH21 Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24 Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that	OCR Scan	SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX	PDF
STR 6307 Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.	Original	500V-1000A J22587 STR 6307 str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module	PDF
SM6G14 Abstract: triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 2 1 6 3T DEj\|TOTTSSGQ00E21b & THYRISTORS \ I PH A SE CO N TRO L THYRISTO RS Average On-State Current I P .4 8 -P .8 1 - » P e a k O f f - S ta te V oltage and R e v e rs e V oltage 100 V 200V O .IA SF 0R 1B 42 S F O R I D42	OCR Scan	000221b SF0R1B42 SF0R1G42 SF0R3B42 SF0R3D42 SF0R3G42 SF0R3J42 SF1B12 SF1D12 SF1G12 SM6G14 triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A	PDF
national semiconductor thyristor Abstract: Toshiba thyristors Text: PREFACE We would like to express our heartfelt thanks for y our use of TOSHIBA sem iconductor devices. In these days, electronic industry has an im portant responsi bility for im provem ent of equipm ents of fundam ental industries to national lives and this situation leads developm ent of semi	OCR Scan		PDF
SFR 460 Abstract: No abstract text available Text: 9 0 9 7 2 50 T O S H I B A " D I S C R E T E / O P T O _ 39C 02361 “¿13 THYRISTOR STACK (BRIDGE STACK) TOSHIBA {DI SC RE TE/ OPTO } 3T De \| T Q ^ S S G D0023L.1 b 1. STUD TYPE STACK 3-P H A S E HYBRID BRIDGE SFR300L6P1, SFR300U6P2 The SFR300L6P1 and SFR300U6P2 series are thy	OCR Scan	D0023L SFR300L6P1, SFR300U6P2 SFR300L6P1 SFR300U6P2 20-V/440-V 50L6P1 SFR 460	PDF

alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent	PDF
IEGT Abstract: TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51 Text: 2003-12 News New Product Guide 3.3 kV IEGT Module Switching devices for inverter equipment used to drive large motors, such as rail car, locomotive, and steel production, and to construct power transmission and distribution systems have been changing from Thyristors to high voltage power transistors, which are capable of faster switching.	Original	BEE0030A IEGT TOSHIBA IEGT MG1200FXF1US53 MG400FXF2YS53 MG800FXF1US53 MG800FXF toshiba gto IEGT toshiba MG800FX MG1200FXF1US51	PDF
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587	PDF
SM2LZ47 equivalent Abstract: RGK 13/1 TRIAC 13001 S6785G equivalent SF Toshiba Thyristor toshiba thyristor SF SM10LZ47 16A1A TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS SM8LZ47 Text: Thyristors and Triacs PRODUCT GUIDE 1 Overview Features Thyristors GeneralPurpose Thyristors A variety of non-insulated and insulated thyristors is available. Non-insulated thyristors range from 0.3 A to 10 A and insulated thyristors range from 3 A to 25 A.	Original		PDF
BUT11APX equivalent Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice	PDF
BU4508DX equivalent Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent	PDF
MB4213 Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors	Original	SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD	PDF
GT50J101 Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive	Original		PDF
s5j53 Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require	Original	E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A	PDF
CSG3001-18A04 Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04 Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power	Original	400F415 460F460 500F500 630F415 730F460 800F500 570F575 630F660 870F575 1000F660 CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04	PDF

TOSHIBA THYRISTORS Search Results

TOSHIBA THYRISTORS Result Highlights (5)

TOSHIBA THYRISTORS Datasheets Context Search

mosfet 600V 20A

Untitled

induction cooker fault finding diagrams

TPCT4203

Toshiba TMPA8873

SM12LZ52

Untitled

Untitled

gate turn off thyristors

500EXH21

STR 6307

SM6G14

national semiconductor thyristor

SFR 460

alternator diode 1776 B

IEGT

BC548 TRANSISTOR REPLACEMENT

SM2LZ47 equivalent

BUT11APX equivalent

BU4508DX equivalent

MB4213

GT50J101

s5j53

CSG3001-18A04