Untitled
Abstract: No abstract text available
Text: ASD18-MLC Series 1.8” SATA 6 Gb/s SSD with MLC NAND Flash 1 AdvancedTCA Features Sustained read up to 480 MB/s Sustained write up to 190 MB/s Capacity: 64, 128, 256 GB SATA 6 Gb/s interface Toshiba 24nm MLC Toggle NAND Flash Shock and vibration resistant
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ASD18-MLC
38bration
ASD18-MLC64G-C2
ASD18-MLC128G-C2
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Untitled
Abstract: No abstract text available
Text: ASDMS-MLC Series mSATA SATA 6 Gb/s SSD with MLC NAND Flash Features SSDs Sustained read up to 480 MB/s Sustained write up to 390 MB/s Capacity: 32, 64, 128, 256GB SATA 6 Gb/s interface Toshiba 19/ 24nm MLC Toggle NAND Flash Shock and vibration resistant High IOPS
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256GB
MO-300)
800Hz,
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Untitled
Abstract: No abstract text available
Text: ASD26-MLC/MA2/HA2 Series 2.5” SATA SSD with MLC NAND Flash Features SSDs Sustained read up to 480 MB/s Sustained write up to 410 MB/s Capacity: 32, 64, 128, 256, 512 GB SATA 6 Gb/s interface ASD26-MLC SATA 3 Gb/s interface (ASD26-MA2/ HA2) Toshiba 24nm MLC/ SLC model Toggle NAND
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ASD26-MLC/MA2/HA2
ASD26-MLC)
ASD26-MA2/
512GB
ASD26-MLC
300/70Non-operating:
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tc140g
Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.
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TC140G
167th
MAS-0097/3-92
TC140G37
TC140G27
TC140G54
TC140G44
TC140G12
TC140G68
toshiba tc140g27
TC140G09
TC140G18
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ICAN-6525
Abstract: SC4000 LSI Logic teradyne
Text: HARRIS SEMICOND SECTOR 37E D • M3Ü2271 GG242?fei 1 « H A S T-VZ^-OD ADVANCELL SC4000 Seríes GENERIC DATA ADVANCELL CMOS Standard Cells Features: ■ Low-power sillcon-gate CMOS technology ■ 1.0 ns speed 2-input NAND gate, fanout - 2, A I = 2 mm
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GG242
SC4000
2900-Series
SC4000-series
ICAN-6525
LSI Logic teradyne
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THGBM4G4D1HBAIR
Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR
Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number
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SCE0004L
TC58DVM92A5TA00
TC58DVM92A5TAI0
TC58DVM92A5BAJ3
TC58DYM92A5TA00
TC58DYM92A5TAI0
TC58DYM92A5BAJ3
TC58DVG02A5TA00
TC58DVG02A5TAI0
TC58DVG02A5BAJ4
THGBM4G4D1HBAIR
TH58TVG5S2FBA49
thgbm4g5d1hbair
TC58NVG3S0FTA00
TH58TAG7S2FBA89
TC58DVG3S0ETAI0
TH58TAG6S2FBA89
TH58NVG4S0FTA20
TH58NVG6S2FTA20
THGBM4G6D2HBAIR
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TC17G Series
Abstract: 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell
Text: TOSHIBA ASIC TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. CMOS GATE ARRAY TC1TOGSERESGITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI
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TC110G
TC17G
TC17G Series
74HC family Application Notes
toshiba tc110g
toshiba tc17g
SEMI-E-S1001
TC110G38
1 gate toshiba logic
TTL Logic Family list
DAP macro language
TOSHIBA Gate array macro cell
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.
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1C120G
TC120G
MA01803
MAS-0053/6-89
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toshiba tc110g
Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
Text: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high
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1C120G
TC120G
Suite205
CA92680
MA01803
5555Triangle
MAS-0053/6-89
toshiba tc110g
CMOS GATE ARRAYs toshiba
TC110G
toshiba toggle nand
74HC inverter tri-state output
TOSHIBA Gate array macro cell
110G
TC120G38
TC120G75
TC120GA0
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toshiba tc110g
Abstract: toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC17G TC110G21 TC110G38 VLSI TECHNOLOGY
Text: ASIC TOSHIBA TOSHIBA AMERICA ELECTRONIC COMPONENTS, IIMC. CMOS GATE ARRAY TCllOG SERIES GITE ¿RRAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI
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TC110G
TC17G
toshiba tc110g
toshiba toggle nand
TC17G Series
toshiba tc17g
TC110G11
specifications of basic logic gates 74 series
TC110G21
TC110G38
VLSI TECHNOLOGY
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MIL-STD-806B
Abstract: MIL-STD-806 toggle nand hct mos Transmission gate IC
Text: Logic Sym bols and Truth Tables C2M O S Logic TC74HC/HCT Series 6. How to Read MIL Type Logic Symbols and Truth Tables Table 6-1. MIL Logic Symbols Circuit Logical Equation or Truth Logic Sym bol Function Table 6-1 How to Read MIL Type Logic Symbols Table 6-1 shows the MIL type logic symbols used in high-speed
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TC74HC/HCT
MIL-STD-806B,
MIL-STD-806B
MIL-STD-806
toggle nand
hct mos
Transmission gate IC
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TC150GC8
Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
Text: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.
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TC150GCMOS
TC150G
TC110G,
TC120G
TC140G
wo220
MAS-0062/3-90
TC150GC8
TC150GH2
toshiba tc110g
toshiba tc140g
TC110G
TC150G89
toshiba toggle nand
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.
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TC150G
TC110G,
TC120G
TC140G
MAS-0062/3-90
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TC140G44
Abstract: TC140G27 toshiba tc140g
Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to
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TC140G
MAS-0097/3-90
TC140G44
TC140G27
toshiba tc140g
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Untitled
Abstract: No abstract text available
Text: Lucent Technologies ND14 NAND FlashTAD— CID/AECS Information Manual August 1998 2 General Specifications 2.1 User Hardware Basics 2.1.1 Power Supply System power supply requirements are 5.0 VDC. For additional information, see the following sections of the DSP1609 data sheet: Table 2. DSP1609 Power Supply
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DSP1609
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ‘ arsai "<ÖS TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. TC160G/160E CMOS Gate Array/Embedded Array 0.8 micron Description Features The TC160G and TC160E with embedded functions series of 0.8 micron gate arrays has a 300ps gate speed and up to 21 OK* usable gates. These members of the DSA family
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TC160G/160E
TC160G
TC160E
300ps
300ps
MAS-0152/3-92
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PDF
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TRUEFFS
Abstract: toshiba toggle mode nand toshiba bios Diskonchip 1000H 800H
Text: ADVANCE INFORMATION Am71LVM032 32 MB Disk-on-Chip Single Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk – full hard disk drive emulation — 32MByte 256Mbit capacity — Single die chip, based on 0.16 µm NAND flash
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Am71LVM032
32MByte
256Mbit)
48-pin
8-bit/16-bit
TRUEFFS
toshiba toggle mode nand
toshiba bios
Diskonchip
1000H
800H
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PDF
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toshiba toggle mode NAND
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am71LVM032 32 MB Disk-on-Chip Single Chip Flash Memory and Disk Controller DISTINCTIVE CHARACTERISTICS • General — Flash Disk – full hard disk drive emulation — 32MByte 256Mbit capacity — Single die chip, based on 0.16 µm NAND flash
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Am71LVM032
32MByte
256Mbit)
48-pin
8-bit/16-bit
toshiba toggle mode NAND
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PDF
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FLIP FLOP toggle
Abstract: "CHIP EXPRESS" LPGA Express
Text: QMT08-38 0.8µ CMOS High-Volume Hard Array Product Family Introduction The QMT08-38 0.8µ CMOS high-performance gate array family ranges from 18,000 up to 53,000 gates and offers up to 326 programmable I/Os. Devices are available in LPGA Laser Programmable Gate Array versions for rapid
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QMT08-38
QMT08-38
350ps
FLIP FLOP toggle
"CHIP EXPRESS"
LPGA Express
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siemens master drive circuit diagram
Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
Text: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m
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TC110G
M33S004
siemens master drive circuit diagram
SR flip flop IC
toshiba tc110g
jk flip flop to d flip flop conversion
SC11C1
JK flip flop IC
siemens Nand gate
scxc1
SR flip flop IC pin diagram
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PDF
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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64M128M
66MHz
100MHz
200MHz)
500/600MHz
800MHz
400MHz
800MHz)
X16/X18X32
PhotoPC550
toshiba toggle mode nand
TC518128
TC518129
TC551001 equivalent
551664
TC518512
sgs-thomson power supply
Toggle DDR NAND flash
jeida 38 norm
APPLE A5 CHIP
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PDF
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MIL-STD-806
Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
Text: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted
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TC4069 OSCILLATOR
Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
Text: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted
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PDF
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tmp68hc11a
Abstract: No abstract text available
Text: TOSHIBA 1 TM P68HC11E9 I NTRODUCTI ON The TM P68HC11E9 is a n advanced 8-bit m icrocontroller MCU w ith h ig h ly sophisticated on-chip peripheral capabilities. New design techniques were used to achieve a nom inal bus speed of 2.1MHz (@Ta = - 4 0 ~ + 85°C)*. In addition, the fully
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P68HC11E9
P68HC11E9
TMP68HC11E9,
TMP68HC11E0T-3/E1T-3.
TMP68HC11E0T-3/E1T-3â
DIP48-P-600
48PIN
G0311S1
SDIP64-P-750
64PIN
tmp68hc11a
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PDF
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