TOSHIBA TRANSISTOR A1941 BASE COLLECTOR AND EMITTER Search Results

TOSHIBA TRANSISTOR A1941 BASE COLLECTOR AND EMITTER Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SA1941		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-140 V / IC=-10 A / hFE=55~160 / VCE(sat)=-2.0 V / TO-3P(N)
DFE2016CKA-1R0M=P2		Murata Manufacturing Co Ltd	Fixed IND 1uH 1800mA NONAUTO
BLM15PX121BH1D		Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D		Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
MGN1S1208MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN

TOSHIBA TRANSISTOR A1941 BASE COLLECTOR AND EMITTER Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
a1941 Abstract: Toshiba transistor A1941 A1941 TRANSISTOR transistor a1941 a1941 power transistor Toshiba transistor 2SC5198 A1941 data sheet a1941 specifications toshiba a1941 2SA1941 equivalent Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	2SA1941 2SC5198 a1941 Toshiba transistor A1941 A1941 TRANSISTOR transistor a1941 a1941 power transistor Toshiba transistor 2SC5198 A1941 data sheet a1941 specifications toshiba a1941 2SA1941 equivalent	PDF
Toshiba transistor a1941 Abstract: A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198 Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	2SA1941 2SC5198 Toshiba transistor a1941 A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198	PDF
Toshiba transistor A1941 Abstract: a1941 A1941 TRANSISTOR toshiba a1941 A1941 TOSHIBA transistor a1941 a1941 specifications Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	2SA1941 2SC5198 2-16C1A Toshiba transistor A1941 a1941 A1941 TRANSISTOR toshiba a1941 A1941 TOSHIBA transistor a1941 a1941 specifications	PDF
A1941 TRANSISTOR Abstract: No abstract text available Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	2SA1941 2SC5198 A1941 TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	2SA1941 2SC5198	PDF
Toshiba transistor A1941 Abstract: a1941 2SA1941 datasheet toshiba a1941 Toshiba transistor 2SA1941 A1941 TRANSISTOR Toshiba transistor 2SC5198 transistor a1941 A1941 circuits a1941 specifications Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.	Original	2SA1941 2SC5198 Toshiba transistor A1941 a1941 2SA1941 datasheet toshiba a1941 Toshiba transistor 2SA1941 A1941 TRANSISTOR Toshiba transistor 2SC5198 transistor a1941 A1941 circuits a1941 specifications	PDF