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    TOSHIBA TRANSISTOR DATE CODE MARKING Search Results

    TOSHIBA TRANSISTOR DATE CODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR DATE CODE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK100F04K3

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3 18mitation,

    Untitled

    Abstract: No abstract text available
    Text: TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol


    Original     		PDF TK80F08K3

    Untitled

    Abstract: No abstract text available
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK130F06K3 30mitation,

    toshiba transistor date code marking

    Abstract: No abstract text available
    Text: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)


    Original     		PDF TK150F04K3 30mitation, toshiba transistor date code marking

    TK100F04K3

    Abstract: K100F04K
    Text: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK100F04K3 TK100F04K3 K100F04K

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3 toshiba transistor date code marking TK100F06K3 K100F06K

    TJ120F06J3

    Abstract: toshiba transistor date code marking J120F06J
    Text: TJ120F06J3 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSⅢ TJ120F06J3 Chopper Regulator, DC-DC Converter Applications Motor Drive Applications • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = −10 A (max) (VDS = −60 V)


    Original     		PDF TJ120F06J3 TJ120F06J3 toshiba transistor date code marking J120F06J

    toshiba transistor date code marking

    Abstract: TK40F08K3 toshiba date code marking
    Text: TK40F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK40F08K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF TK40F08K3 toshiba transistor date code marking TK40F08K3 toshiba date code marking

    K80F

    Abstract: toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K
    Text: TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK80F08K3 Swiching Regulator • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 0.4 ± 0.1 1.1 Symbol


    Original     		PDF TK80F08K3 K80F toshiba transistor date code marking TK150F04K3L TK80F08K3 K80F08K

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3

    Untitled

    Abstract: No abstract text available
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK130F06K3

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Text: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


    Original     		PDF

    K150F04K

    Abstract: TK150 TK150F04K3 toshiba date code marking
    Text: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)


    Original     		PDF TK150F04K3 K150F04K TK150 TK150F04K3 toshiba date code marking

    TK130F06K3

    Abstract: K130F06K toshiba transistor date code marking K130F
    Text: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK130F06K3 TK130F06K3 K130F06K toshiba transistor date code marking K130F

    Untitled

    Abstract: No abstract text available
    Text: TK150F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK150F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 210 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 40 V)


    Original     		PDF TK150F04K3

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK100F04K3

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
    Text: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new


    Original     		PDF November2006 2006NXPB Motorola transistor smd marking codes MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model

    P620 PHOTOCOUPLER

    Abstract: p181 opto TLP185 TLP785 Opto Coupler p181 toshiba smd marking code transistor opto P181 opto coupler TLP250 opto coupler P421 P181 Photocoupler
    Text: 2011-3 PRODUCT GUIDE Photocouplers and Photorelays SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Preface Extensive Line of Products As a type of isolator favored by manufacturers, photocouplers now serve as noise protectors in many electronic devices.


    Original     		PDF BCE0034F P620 PHOTOCOUPLER p181 opto TLP185 TLP785 Opto Coupler p181 toshiba smd marking code transistor opto P181 opto coupler TLP250 opto coupler P421 P181 Photocoupler

    2SK43 transistor

    Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
    Text: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written


    Original     		PDF

    Motorola transistor smd marking codes

    Abstract: transistor smd marking CODE Wb BFG591 Application Notes toshiba smd marking code transistor diode varicap BB 112 sot323 transistor marking MOTOROLA walkie-talkie transceiver diagram 113 marking code transistor ROHM smd transistor marking A3 sot23 3pin BFG135 amplifier
    Text: th 1 ed ition 10 th th RF manual 10 edition Application and design manual for RF products September 2007 Introduction Welcome to this very special edition of the RF manual. This is our 10th issue – definitely an occasion for celebration! Over the years, the RF manual has become


    Original     		PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578