tb31224cf
Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Text: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future
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PDF
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SCE0007A
tb31224cf
transistor 2sk1603
TA8264AHQ
TC94A58FAG
TA7769P
TA8275HQ
2SK1603
ta8266hq
2SK2056
S2Y52
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IGBT K 40 T 1202
Abstract: No abstract text available
Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.
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TF1207
TF1207
IGBT K 40 T 1202
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl R Unit in mm ÏÏTOT- TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver
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TF1208
TF1208
0/16m
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fll50
Abstract: No abstract text available
Text: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 fl 7 Unit in mm ÏÏTOT- TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.
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TF1207
TF1207
VCC-15V
RL-200U
fll50
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200H
Abstract: TF1208
Text: TOSHIBA TF1208 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 8 TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability
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TF1208
TF1208
200H
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IGBT K 40 T 1202
Abstract: 40 t 1202 igbt
Text: TOSHIBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 ? fl f i TOSHIBA TF1206 is the IGBT gate driver designed for use U nit in mm ÏÏTOT- with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver
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TF1206
TF1206
10-42A1A
IGBT K 40 T 1202
40 t 1202 igbt
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40 t 1202 igbt
Abstract: JTS 4PIN 1042a1
Text: TOSHIBA TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 1 f l ^ Unit in mm ÏÏTOT- TOSHIBA TF1205 is the IGBT gate driver designed fo r use w ith TOSHIBA Insulated Gate Bipolar Transistor M odule and it includes the optical isolator and IGBT gate driver
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TF1205
TF1205
40 t 1202 igbt
JTS 4PIN
1042a1
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Untitled
Abstract: No abstract text available
Text: TF1208 TOSHIBA TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 8 Unit in mm TOSHIBA TF1208 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability
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OCR Scan
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TF1208
TF1208
0/16mA
200ii
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zener diode T 5z27
Abstract: toshiba zener 5Z27 5Z30 3-10B1A
Text: TOSHIBA 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 POWER SURGE SUPPRESSOR Unit in mm -designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over-voltage conditions. , / .
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961001EAA2'
zener diode T 5z27
toshiba zener
5Z27
5Z30
3-10B1A
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20M diode zener
Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Text: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200
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U02Z300
t-10ms
20M diode zener
MARKING LY toshiba
U02Z300
U02Z300-X
U02Z300-Y
U02Z300-Z
TOSHIBA DIODE GLASS
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TA78L008AP
Abstract: TA78L005 TA78L005AP TA78L012AP N22V TA78L006AP TA78L007AP TA78L009AP TA78L010AP TA78L075AP
Text: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP
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TA78L005
TA78L005AP,
TA78L006AP,
TA78L007AP,
TA78L075AP
TA78L008AP,
TA78L009AP,
TA78L010AP,
TA78L012AP
TA78L132AP,
TA78L008AP
TA78L005AP
N22V
TA78L006AP
TA78L007AP
TA78L009AP
TA78L010AP
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Zener IT 243
Abstract: 3Z47 zener toshiba 3z47 diode 3Z12-3Z390 toshiba zener
Text: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 371?~373Q fl Unit in mm VOLTAGE DETECTOR AND SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package P = 3W
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3Z12-3Z390
DO-201AD
961001EAA2
3Z12-3Z51)
3Z68-3Z90)
Zener IT 243
3Z47
zener toshiba
3z47 diode
3Z12-3Z390
toshiba zener
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transistor TA78L
Abstract: TA78L TA78L008AP IC TA78L
Text: TOSHIBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78L005AP, TA78L006AP, TA78L007AP, TA78L075AP TA78L008AP, TA78L009AP, TA78L010AP, TA78L012AP TA78L132AP, TA78L015AP, TA78L018AP, TA78L020AP, TA78L024AP
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TA78L
TA78L005AP,
TA78L006AP,
TA78L007AP,
TA78L075AP
TA78L008AP,
TA78L009AP,
TA78L010AP,
TA78L012AP
TA78L132AP,
transistor TA78L
TA78L008AP
IC TA78L
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3Z27 DIODE
Abstract: 3Z12 3Z27 3Z68 3Z200 3Z47 3Z110 3Z36 rd 3z27 3Z13
Text: 3Z12-3Z390 TOSHIBA TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE 3Z12-3Z390 Unit in mm VOLTAGE DETECTOR AN D SUPPRESSOR APPLICATIONS Average Power Dissipation Peak Reverse Power Dissipation Zener Voltage Tolerance of Zener Voltage Plastic Mold Package -o - P = 3W
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3Z12-3Z390
D0-201AD
961001EAA2
3Z27 DIODE
3Z12
3Z27
3Z68
3Z200
3Z47
3Z110
3Z36
rd 3z27
3Z13
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U1ZB6.8-U1ZB390 TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE U1ZB6.8-U1ZB390 Unit in mm CONSTANT VOLTAGE REGULATION. p3 TRANSIENT SUPPRESSORS. • • • + Average Power Dissipation : P = 1.0 W Zener Voltage : Vz = 6.8~390 V Surface Mounting Plastic Mold Package
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8-U1ZB390
1ZB390
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2SC2982
Abstract: 02CZ24 TA8313 TA8313F
Text: TOSHIBA TENTATIVE TA8313F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MULTI CHIP TA8313F LED DRIVER FOR CAMERA TA8313F is Multi Chip IC incorporates 4 low saturation discrete transistors and one Zener Diode. This IC is suitable for a camera use LED drive
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TA8313F
TA8313
TA8313F
02CZ24
980910EBA2
SSOP16-P-225-1
2SC2982
02CZ24
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Untitled
Abstract: No abstract text available
Text: TOSHIBA U5ZA27 Z ,U5ZA27C TOSHIBA ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE U5ZA27ÍZ), U5ZA27C Unit in mm BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE
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U5ZA27
U5ZA27C
961001EAA2'
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120V ZENER
Abstract: 1ZC12 1ZC120 1ZC12-1ZC120 1ZC13 1ZC15 1ZC16 1ZC18 1ZC20 1ZC22
Text: TOSHIBA 1ZC12-1ZC120 TENTATIVE TOSHIBA ZENER DIODE SILICON DIFFUSE TYPE 1ZC12-1ZC120 Unit in mm CONSTANT VOLTAGE REGULATION TELEPHONE, PRINTER USES 6 Average Power Dissipation : P = 1.0 W Zener Voltage : VZ = 12- 120 V Tolerance of Zener Voltage Vg : ±10%
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1ZC12-1ZC120
1ZC120)
961001EAA2
1ZC36
1ZC39
1ZC43
1ZC47
1ZC51
1ZC56
120V ZENER
1ZC12
1ZC120
1ZC12-1ZC120
1ZC13
1ZC15
1ZC16
1ZC18
1ZC20
1ZC22
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TF1207
Abstract: No abstract text available
Text: TO SH IBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 7 TOSHIBA TF1207 is the IGBT gate driver designed for use U n it in mm with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.
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OCR Scan
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PDF
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TF1207
TF1207
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l24SB
Abstract: ta7555 ta78r TA78M05 TA78M05SB TA78M06SB TA78M08SB TA78M09SB 105SB TA78M12SB
Text: TOSHIBA TA78M05,06,08~10,12,15,18,20,24SB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA78M05SB, TA78M06SB, TA78M08SB, TA78M09SB, TA78M10SB TA78M12SB, TA78M15SB, TA78M18SB, TA78M20SB, TA78M24SB 0.5A THREE TERMINAL POSITIVE VOLTAGE REGULATORS
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TA78M05
TA78M05SB,
TA78M06SB,
TA78M08SB,
TA78M09SB,
TA78M10SB
TA78M12SB,
TA78M15SB,
TA78M18SB,
TA78M20SB,
l24SB
ta7555
ta78r
TA78M05SB
TA78M06SB
TA78M08SB
TA78M09SB
105SB
TA78M12SB
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ZENER DIODE J3
Abstract: 1SZ57-1SZ59 ZENER C 3V zener diode marking 5d zener diode T3 Marking zener diode mark J3 1SZ57 1SZ57 diode diode j5d zener diode T3
Text: W7 TOSHIBA {D IS CRET E/ OP TO } ÍmTI^O^SSO □ 9097250 TOSHIBA DISCRETE/OPTO 1SZ57—1SZ59 67C 09381 3 7 D Silicon Planar Type Tem perature Compensated Zener Diode INDUSTRIAL APPLICATIONS Unit in mm VOLTAGE REGULATION AND VOLTAGE STANDARD APPLICATIONS.
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1SZ57--1SZ59
1SZ59)
1SZ58
1SZ59
ZENER DIODE J3
1SZ57-1SZ59
ZENER C 3V
zener diode marking 5d
zener diode T3 Marking
zener diode mark J3
1SZ57
1SZ57 diode
diode j5d
zener diode T3
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DF2S12FU
Abstract: No abstract text available
Text: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Cx = 15 pF Typ. Zener Voltage correspond to E24 Series.
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DF2S12FU
DF2S12FU
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Untitled
Abstract: No abstract text available
Text: TOSHIBA DF2S12FU TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE DF2S12FU DIODES FOR PROTECTING AGAINST ESD • • • Two-pin ultra-small packages are suitable for higher mounting densities. Small Total Capacitance : Ct = 15 pF Typ. Zener Voltage correspond to E24 Series.
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DF2S12FU
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TF1206
Abstract: 200H
Text: TO SH IBA TF1206 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 6 TOSHIBA TF1206 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability
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OCR Scan
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TF1206
TF1206
200H
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