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Toshiba America Electronic Components TPC6102(TE85L) PART NUMBER ONLY (Also Known As: TPC6102)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TPC6102(TE85L)		1,215			1 $4 10 $4 100 $4 1000 $1.5 10000 $1.5	Buy Now
	TPC6102(TE85L)		1,215			1 $4 10 $4 100 $4 1000 $1.5 10000 $1.5	Buy Now
Toshiba America Electronic Components TPC6102 FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TPC6102		34,778			1 - 10 - 100 - 1000 $0.218 10000 $0.189	Buy Now

TPC6102 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
TPC6102	Toshiba	Metal oxide P-channel FET, Enhancement Type w. diode	Original	PDF
TPC6102	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
TPC6102	Toshiba	FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE	Scan	PDF
TPC6102(TE12L)	Toshiba	Transistor Mosfet N-CH 30V 4.5A 6VS T/R	Original	PDF
TPC6102(TE12L:F)	Toshiba	Transistor Mosfet N-CH 30V 4.5A 6VS T/R	Original	PDF
TPC6102(TE85L)	Toshiba	Transistor Mosfet N-CH 30V 4.5A 6(2-3T1A) T/R	Original	PDF

TPC6102 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TPC6102 Abstract: No abstract text available Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102 TPC6102	PDF
TPC6102 Abstract: MARKING toshiba Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102 TPC6102 MARKING toshiba	PDF
Untitled Abstract: No abstract text available Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102	PDF
Untitled Abstract: No abstract text available Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102	PDF
MARKING s3B Abstract: No abstract text available Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102 MARKING s3B	PDF
Untitled Abstract: No abstract text available Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102	PDF
Untitled Abstract: No abstract text available Text: TPC6102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII TPC6102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6 S (typ.)	Original	TPC6102	PDF
tpc8107 Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002 Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in	Original	3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603	PDF
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126	PDF
2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718	PDF
2SK3566 equivalent Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent	PDF
2SK1603 Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078 Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1	Original	BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078	PDF

HQFP64 Abstract: T6K34 TB62718AF TLP3113 TLP3114 TLP3115 TPC6001 TPC6002 TPC6101 Text: 東芝半導体情報誌アイ 2000・7月号発行／（株）東芝セミコンダクター社電子デバイス営業事業部営業企画部 T E L . 0 3-3 4 5 7-3 4 0 5 F A X . 0 3-5 4 4 4-9 4 3 1 C O N T E 7 Vol.96 N T 最先端DRAM技術を共同開発	Original	256STN-LCD T6K34 TB62718AF TLP3113TLP3114TLP3115 13mDRAM HQFP64 T6K34 TB62718AF TLP3113 TLP3114 TLP3115 TPC6001 TPC6002 TPC6101	PDF
2sk4110 Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3	Original	BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
Power MOSFET, toshiba Abstract: toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004 Text: 2004-3 PRODUCT GUIDE Power MOSFETs TPC Series semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Power MOSFETs TPC Series CONTENTS 1. Overview. p.4-5 2. Features . p.6-15	Original	BCE0019A BCE0019B Power MOSFET, toshiba toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004	PDF
toshiba smd marking Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005 Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency	Original		PDF
2SK1603 Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855 Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and	Original	3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855	PDF
2sK2750 equivalent Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238 Text: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21	Original	O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238	PDF
5252 0.9V 1.5V led driver Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT Text: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors	Original	BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT	PDF
STK 056 Abstract: No abstract text available Text: HAY 1900 06:16 CCT-FAX* HNO:05250204 <Norial message> From:67361 To:33/45 [Alt.] P002/003 0UT:0004 TOSHIBA TPC6102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC6102 T E N T A TI V F NOTE BOOK PC PORTABLE EQUIPMENTS APPLICATIONS	OCR Scan	P002/003 TPC6102 T30P-* -10//A VDD---15V STK 056	PDF
8Q transistor Abstract: TPC6102 Text: TPC6102 T O S H I B A TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII te n tâ t TPC6102 ] NOTE BOOK PC PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS UNIT:mm •Low Drain - Source ON Resistance : R D s {o n )— mQ(Typ.) •High Forward Transfer Admittance : \|Y f s \|=	OCR Scan	TPC6102 -10//A -55-nce Mi11er" 8Q transistor TPC6102	PDF

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TPC6102 Search Results

TPC6102 Price and Stock

Toshiba America Electronic Components TPC6102(TE85L)

Toshiba America Electronic Components TPC6102

TPC6102 Datasheets (6)

TPC6102 Datasheets Context Search

TPC6102

TPC6102

Untitled

Untitled

MARKING s3B

Untitled

Untitled

tpc8107

2SK2056

2SK3567 equivalent

ESM 740

2SK3878 equivalent

2SK3566 equivalent

2SK1603

HQFP64

2sk4110

2SA1930 2sc5171

Power MOSFET, toshiba

toshiba smd marking

2SK1603

2sK2750 equivalent

5252 0.9V 1.5V led driver

STK 056

8Q transistor