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    Toshiba America Electronic Components TPC8109(TE12L)

    MOSFET P-CH 30V 10A 8SOP
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    DigiKey TPC8109(TE12L) Cut Tape 1
    • 1 $2
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    Advantech Co Ltd TPC-8100TR-MOKE

    Modules Accessories M12 Connector kit for TPC-8100TR
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    Mouser Electronics TPC-8100TR-MOKE
    • 1 $182.25
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    Advantech Co Ltd TPC8100TRNA1401E-T

    Panel PCs 10.4" Railway Panel PC with 24V DC PWR
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    Mouser Electronics TPC8100TRNA1401E-T
    • 1 $2850
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    Toshiba America Electronic Components TPC8109(TE12L,Q)

    Trans MOSFET P-CH Si 30V 10A 8-Pin SOP T/R
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    Verical TPC8109(TE12L,Q) 72,000 576
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    Quest Components TPC8109(TE12L,Q) 13
    • 1 $1.5
    • 10 $1.25
    • 100 $0.9
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    TPC8109(TE12L,Q) 13
    • 1 $1.5
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    Rochester Electronics TPC8109(TE12L,Q) 72,000 1
    • 1 $0.5792
    • 10 $0.5792
    • 100 $0.5444
    • 1000 $0.4923
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    Advantech Co Ltd TPC-8100TR-N3AE

    10.4" En50155 Railway Panel Computer |Advantech TPC-8100TR-N3AE
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    Newark TPC-8100TR-N3AE Bulk 1
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    Find more TPC810 price and stock on Findchips.com

    TPC810 Datasheets (29)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    TPC8102 Toshiba Metal oxide P-channel FET, Enhancement Type w. diode Original PDF
    TPC8102 Toshiba P-Channel MOSFET Original PDF
    TPC8102 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8102 Toshiba Original PDF
    TPC8102 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8103 Toshiba Original PDF
    TPC8103 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8103 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8103 Toshiba Silicon P-channel MOS FET transistor Scan PDF
    TPC8103 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
    TPC8104-H Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8104-H Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8104-H Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(HIGH SPEED U-MOS II) Scan PDF
    TPC8104-H Toshiba Scan PDF
    TPC8105-H Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8105-H Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8105-H Toshiba Scan PDF
    TPC8106-H Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8106-H Toshiba Power MOSFETs Cross Reference Guide Original PDF
    TPC8106-H Toshiba Field Effect Transistor Silicon P Channel MOS Type Scan PDF

    TPC810 Datasheets Context Search

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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)


    OCR Scan     		TPC8103 PDF

    TPC8107 application circuit

    Abstract: TPC8107 TPC8107 "pin compatible"
    Text: TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)


    Original     		TPC8107 TPC8107 application circuit TPC8107 TPC8107 "pin compatible" PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8105-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED U -M O SII TPC8105-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS SOP-8 HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS


    OCR Scan     		TPC8105-H 111III PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R ß S (O N ) = 34 m H (Typ.)


    OCR Scan     		TPC8102 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source O N Resistance : R ß S (O N )= 34mO


    OCR Scan     		TPC8102 --30V) --24V, PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TPC8102 TOSHIBA FIELD EFFECT TRANSISTOR t p t f SILICON P CHANNEL MOS TYPE tt-MOSVI t 1 n ? LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON) —34m il (Typ.) •


    OCR Scan     		TPC8102 --10//A --30V) ----24V, PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSVI T P C 8 1 02 LITHIUM ION BATTERY IN D U S T R IA L A P P L IC A T IO N S PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : R d S (O N )= 34mO (Typ.)


    OCR Scan     		TPC8102 10/xA 20ki2) PDF

    tpc8106

    Abstract: TPC8106-H
    Text: TPC8106-H TO SH IBA TENTATIVETOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE HIGH SPEED U-M OSII TPC8106-H LITHIUM ION BATTERY APPLICATIONS INDUSTRIAL APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS


    OCR Scan     		TPC8106-H tpc8106 TPC8106-H PDF

    tpc8107

    Abstract: TPC8107 application circuit
    Text: TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)


    Original     		TPC8107 tpc8107 TPC8107 application circuit PDF

    TPC8108

    Abstract: No abstract text available
    Text: TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8108 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)


    Original     		TPC8108 TPC8108 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8104-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type High-Speed U−MOSII TPC8104−H High-Efficiency DC／DC Converter Applications Lithium Ion Battery Applications Unit: mm Notebook PC Applications Portable-Equipment Applications z Small footprint due to a small and thin package


    Original     		TPC8104-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed U−MOSII TPC8105−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package


    Original     		TPC8105-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed U−MOSII TPC8105−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package


    Original     		TPC8105-H PDF

    TPC8108

    Abstract: No abstract text available
    Text: TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8108 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)


    Original     		TPC8108 TPC8108 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)


    Original     		TPC8102 PDF

    TPC8104-H

    Abstract: No abstract text available
    Text: TPC8104-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High-Speed U−MOSII TPC8104−H High-Speed and High-Efficiency DC−DC Applications Converter Unit: mm Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package


    Original     		TPC8104-H TPC8104-H PDF

    TPC8109

    Abstract: 20CPF
    Text: TPC8109 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPC8109 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型薄型で実装面積が小さい。 •


    Original     		TPC8109 TPC8109 20CPF PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8104-H TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type High-Speed U−MOSII TPC8104−H High-Efficiency DC／DC Converter Applications Lithium Ion Battery Applications Notebook PC Applications Portable-Equipment Applications Unit: mm z Small footprint due to a small and thin package


    Original     		TPC8104-H PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-M OSII T P C 8 1 03 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC Low Drain-Source ON Resistance : RßS (ON) = 9.5 mH (Typ.) High Forward Transfer Admittance: |Yfs| = 2 0 S (Typ.)


    OCR Scan     		TPC8103 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8105-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed U−MOSII TPC8105−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package


    Original     		TPC8105-H PDF

    TPC8108

    Abstract: No abstract text available
    Text: TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8108 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.)


    Original     		TPC8108 TPC8108 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		TPC8109 PDF

    TPC8106-H

    Abstract: No abstract text available
    Text: TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed U−MOSII TPC8106−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package


    Original     		TPC8106-H TPC8106-H PDF

    TPC8109

    Abstract: No abstract text available
    Text: TPC8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8109 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 14 mΩ (typ.)


    Original     		TPC8109 TPC8109 PDF