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    TPCF Price and Stock

    Matrix Orbital EVE3-35G-BLM-TPC-F32

    GRAPHIC DISPLAY TFT RGB 3.5"
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    DigiKey EVE3-35G-BLM-TPC-F32 Box 6 1
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    Mouser Electronics EVE3-35G-BLM-TPC-F32
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    Matrix Orbital EVE3-43G-BLM-TPC-F32

    GRAPHIC DISPLAY TFT RGB 4.3"
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    DigiKey EVE3-43G-BLM-TPC-F32 Box 4 1
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    Matrix Orbital EVE3-70G-BLM-TPC-F32

    GRAPHIC DISPLAY TFT RGB 7"
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    DigiKey EVE3-70G-BLM-TPC-F32 Box 1 1
    • 1 $110.94
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    Mouser Electronics EVE3-70G-BLM-TPC-F32 3
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    TE Connectivity TPCF13C0

    SWITCH PUSH SPST-NO 1A 125V
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    Newark TPCF13C0 Bulk 250
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    Quest Components TPCF13C0 25
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    NXP Semiconductors CWH-UTP-CF-HE

    USB TAP HOST TARGET
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    DigiKey CWH-UTP-CF-HE Bulk 1
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    TPCF Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPCF11CGPC0 (3-1437572-8) Tyco Electronics Pushbutton Switches; TPCF11CGPC0=FLUSH PLUNGER PUSH ( Alcoswitch ) Original PDF
    TPCF11CGPC2 (3-1437572-9) Tyco Electronics Pushbutton Switches; TPCF11CGPC2=TINY PUSH BUTTON ( Alcoswitch ) Original PDF
    TPCF11CGRA2 (4-1437572-1) Tyco Electronics Pushbutton Switches; TPCF11CGRA2=PUSH BUTTON SWITCH ( Alcoswitch ) Original PDF
    TPCF11FGPC0 (4-1437572-2) Tyco Electronics Pushbutton Switches; TPCF11FGPC0=FLUSH PLUNGER PUSH ( Alcoswitch ) Original PDF
    TPCF11FGPCES0 (4-1437572-3) Tyco Electronics Pushbutton Switches; TPCF11FGPCES0=FLUSH PLUNGER PU ( Alcoswitch ) Original PDF
    TPCF13C0 (4-1437572-5) Tyco Electronics Pushbutton Switches; TPCF13C0=FLUSH PLUNGER PUSHBUT ( Alcoswitch ) Original PDF
    TPCF8001 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8001 Toshiba MOSFETs - Nch VDSS=30V; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (max 0.031) (max 0.023); I_S (A): (max 7) Original PDF
    TPCF8001 Toshiba MOSFET TPC Series Scan PDF
    TPCF8003 Toshiba Transistors - Mosfets Original PDF
    TPCF8003 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCF8003 Toshiba TPCF8003 - TRANSISTOR 7000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, THIN, 2-3U1A, 8 PIN, FET General Purpose Small Signal Original PDF
    TPCF8004 Toshiba Transistors - Mosfets Original PDF
    TPCF8004 Toshiba Japanese - Transistors - Mosfets Original PDF
    TPCF8004 Toshiba TPCF8004 - Nch VDSS =30V Original PDF
    TPCF8101 Toshiba power MOSFET Original PDF
    TPCF8101 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPCF8101 Toshiba Pch Power MOSFET; Surface Mount Type: N; Package: VS-8; R DS On (max 0.085) (max 0.04) (max 0.028); I_S (A): (max -6) Original PDF
    TPCF8101(TE85L,F,M Toshiba TPCF8101 - X35 PB-F POWER MOSFET TRANSISTOR VS-8 MOQ=4000 V=-12 PD=2.5W Original PDF
    TPCF8101(TE85L,F,M Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 6A VS-8 Original PDF

    TPCF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Switches > Product Feature Selector > Product Details TPCF11CGRA2 Product Details Live Product Chat


    Original     		PDF TPCF11CGRA2 TPCF11CGRA2

    TPCF8402

    Abstract: No abstract text available
    Text: TPCF8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS IV / U-MOS III TPCF8402 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • Unit: mm Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.)


    Original     		PDF TPCF8402 TPCF8402

    TPCF8301

    Abstract: No abstract text available
    Text: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8301 TPCF8301

    toshiba f5d

    Abstract: TPCF8304
    Text: TPCF8304 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIV TPCF8304 ○ ノートブックＰＣ用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 5.9S (標準)


    Original     		PDF TPCF8304 toshiba f5d TPCF8304

    TPCF8201

    Abstract: No abstract text available
    Text: TPCF8201 東芝電界効果トランジスタ シリコンＮチャネルMOS形 U-MOSIII TPCF8201 ○ 携帯電子機器用 単位: mm ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS(ON) = 38 mΩ (標準)


    Original     		PDF TPCF8201 TPCF8201

    2A101

    Abstract: TPCF8101
    Text: TPCF8101 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8101 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 22 mΩ (標準)


    Original     		PDF TPCF8101 2A101 TPCF8101

    TPCF8102

    Abstract: No abstract text available
    Text: TPCF8102 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8102 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 24 mΩ (標準)


    Original     		PDF TPCF8102 TPCF8102

    MCV MOSFET

    Abstract: TPCF8A01
    Text: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		PDF TPCF8A01 MCV MOSFET TPCF8A01

    TPCF8402

    Abstract: No abstract text available
    Text: TPCF8402 シリコンP,NチャネルMOS形 U-MOS IV / U-MOS III 東芝電界効果トランジスタ TPCF8402 ○ 携帯電子機器用 単位: mm ○ モータドライブ用 ○ ＤＣ－ＤＣコンバ－タ用 • 小型薄型で実装面積が小さい。


    Original     		PDF TPCF8402 20070701-JA TPCF8402

    TPCF8102

    Abstract: No abstract text available
    Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		PDF TPCF8102 TPCF8102

    TPCF8B01

    Abstract: No abstract text available
    Text: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8B01 TPCF8B01

    Untitled

    Abstract: No abstract text available
    Text: TPCF8305 MOSFETs Silicon P-Channel MOS U-MOS TPCF8305 1. Applications • Notebook PCs • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) (3)


    Original     		PDF TPCF8305

    TPCF8303

    Abstract: No abstract text available
    Text: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TPCF8303 TPCF8303

    TPCF8201

    Abstract: ta202
    Text: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		PDF TPCF8201 TPCF8201 ta202

    TPCF8103

    Abstract: No abstract text available
    Text: TPCF8103 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSIII TPCF8103 ○ ノートブック PC 用 ○ 携帯電子機器用 単位: mm • 小型薄型で実装面積が小さい。 • オン抵抗が低い。 : RDS (ON) = 72 mΩ (標準) ( VGS =−4.5V)


    Original     		PDF TPCF8103 TPCF8103

    toshiba f5b

    Abstract: TPCF8302 toshiba f5b data sheet
    Text: TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8302 TENTATIVE Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 44 mÙ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.)


    Original     		PDF TPCF8302 toshiba f5b TPCF8302 toshiba f5b data sheet

    TPCF8102

    Abstract: A2430
    Text: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.)


    Original     		PDF TPCF8102 TPCF8102 A2430

    Untitled

    Abstract: No abstract text available
    Text: TPCF8105 MOSFETs Silicon P-Channel MOS U-MOS TPCF8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = -4.5 V)


    Original     		PDF TPCF8105

    TPCF8306

    Abstract: No abstract text available
    Text: TPCF8306 MOSFETs Silicon P-Channel MOS U-MOS TPCF8306 1. Applications • Power Management Switches 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V)


    Original     		PDF TPCF8306 TPCF8306

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se arch by Ke yword or Part # Products Documentation Resources My Account Customer Support Home > Products > By Type > Switches > Product Feature Selector > Product Details TPCF11CGPC0 Product Details Live Product Chat


    Original     		PDF TPCF11CGPC0 TPCF11CGPC0

    Untitled

    Abstract: No abstract text available
    Text: TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.)


    Original     		PDF TPCF8301

    Untitled

    Abstract: No abstract text available
    Text: TPCF8201 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8201 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.)


    Original     		PDF TPCF8201

    TPCF8108

    Abstract: a2937
    Text: TPCF8108 MOSFET シリコンPチャネルMOS形 U-MOS TPCF8108 1. 用途 • リチウムイオン2次電池用 • パワーマネージメントスイッチ用 • ノートブックPC用 2. 特長 (1) 小型, 薄型で実装面積が小さい。 (2)


    Original     		PDF TPCF8108 TPCF8108 a2937

    TPCF8B01

    Abstract: No abstract text available
    Text: TPCF8B01 東芝複合デバイス シリコンPチャネルMOS形 U-MOSIII ／ショットキバリア型 TPCF8B01 ○ ノートブック PC 用 単位: mm ○ 携帯電子機器用 • 小型薄型で実装面積が小さい。 • オン抵抗が低い。


    Original     		PDF TPCF8B01 -200A) TPCF8B01