Untitled
Abstract: No abstract text available
Text: XC9260/XC9261 シリーズ JTR05042-002 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9260/XC9261 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイ
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XC9260/XC9261
JTR05042-002
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Untitled
Abstract: No abstract text available
Text: XC9262 シリーズ JTR05043-002 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9262 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイプの降圧
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XC9262
JTR05043-002
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Untitled
Abstract: No abstract text available
Text: XC9259 シリーズ JTR05040-001 COT 制御 1A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9259 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS スイッチ Tr.を内蔵した同期整流タイプの降
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XC9259
JTR05040-001
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Untitled
Abstract: No abstract text available
Text: XC9260/XC9261 シリーズ JTR05042-001 COT 制御 1.5A 降圧同期整流 DC/DC コンバータ ☆GreenOperation 対応 •概要 XC9260/XC9261 シリーズはセラミックコンデンサ対応で Pch MOS ドライバ Tr.および Nch MOS ドライバ Tr.を内蔵した同期整流タイ
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XC9260/XC9261
JTR05042-001
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PDF
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s
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DiodesA9337-2726
VMN-SG2124-1401
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SMBJxxA
Abstract: DO220A TVS diode MELF 275 SMA SMB diode guide SM6A27 DO-218AB vcut03b1-dd1 SACXX VBUS05L1 47 2L axial diode DO-219AB
Text: V i s h ay In t e r t e c h n o l o g y, In c . Diodes - Protect Against Transient Voltage Surge and ESD I INNOVAT AND TEC O L OGY T VS and ESD Protection N HN DIODES O 19 62-2012 Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s
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com33-4-9337-2727
VMN-SG2124-1203
SMBJxxA
DO220A
TVS diode MELF 275
SMA SMB diode guide
SM6A27 DO-218AB
vcut03b1-dd1
SACXX
VBUS05L1
47 2L axial diode
DO-219AB
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PDF
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AO331
Abstract: ha 1452 Y 335 STDH150 nr2d2 FD2S
Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.073ns, one fanout (SL = 0.00412pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2
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073ns,
00412pF)
ao211
ao2111
ao2111d2
ao211d2
ao211d4
ao21d2
ao21d4
ao221
AO331
ha 1452
Y 335
STDH150
nr2d2
FD2S
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PDF
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T324
Abstract: T325
Text: ISDN MAGNETICS UPO Interface Transformer • Qualified per Bellcore TR-TSY-000357-1 TM9936 • Minimum interwinding breakdown voltage of 1500 Vrms ELECTRICAL SPECIFICATIONS at 25° C Part Number 2771J Turns Ratio ± 2% 1CT : 1.25 Primary Inductance* mH min
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TM9936
TR-TSY-000357-1
2771J
PEB2095
201-432-ter
T324
T325
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t702 8
Abstract: No abstract text available
Text: MODEM MAGNETICS Global V.90 and V.34 Transformers • Intended for use in high-speed modem applications • Features very low interwinding capacitance, wellisolated windings, and low total harmonic distortion • Qualified per Bellcore TR-TSY-000357-1 TM9961
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TM9961
EN60950
TR-TSY-000357-1
2778B
t702 8
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BELLCORE TSY
Abstract: 2771J PEB2095
Text: ISDN MAGNETICS UPO Interface Transformer • Qualified per Bellcore TR-TSY-000357-1 TM00209 • Minimum interwinding breakdown voltage of 1500 Vrms ELECTRICAL SPECIFICATIONS at 25° C Part Number 2771J Turns Ratio ± 2% 1CT : 1.25 Primary Inductance* mH min
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TR-TSY-000357-1
TM00209
2771J
PEB2095
T2-22
BELLCORE TSY
2771J
PEB2095
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PDF
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2778B
Abstract: FUSE 0300
Text: MODEM MAGNETICS Global V.90 and V.34 Transformers • Intended for use in high-speed modem applications • Features very low interwinding capacitance, wellisolated windings, and low total harmonic distortion • Qualified per Bellcore TR-TSY-000357-1 TM00403
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TM00403
EN60950
TR-TSY-000357-1
2778B
FUSE 0300
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PDF
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Untitled
Abstract: No abstract text available
Text: NOTES: REVISION B MHDMI-19-XX-X-XX-X-TR 1. REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM RETENTION FORCE: 2.00N [.450 LB] 3. ROHS COMPLIANT. 4. TAPE & REEL WILL BE SUPPLIED WHETHER OR NOT-TR IS SPECIFIED. 5. FOR QUANTITIES UP TO 49 PIECES, NO LEADER, TR
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MHDMI-19-XX-X-XX-X-TR
UL94V-0
ISC\MKTG\MHDMI-19-XX-X-XX-X-TR-MKT-SLDDRW
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PDF
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Untitled
Abstract: No abstract text available
Text: NOTES: REVISION C MHDMI-19-XX-X-XX-X-TR 1. REPRESENTS A CRITICAL DIMENSION. 2. MINIMUM RETENTION FORCE: 2.00N [.450 LB] 3. ROHS COMPLIANT. 4 . TAPE & REEL WILL BE SUPPLIED WHETHER OR NOT-TR IS SPECIFIED. 5. FOR QUANTITIES UP TO 49 PIECES, NO LEADER, TR
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MHDMI-19-XX-X-XX-X-TR
E130i,
C5210
C2680
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Nanotec Electronic GmbH
Abstract: No abstract text available
Text: HYUNDAI REPRESENTATIVES CENTRAL REGION CANADA TECH T R EK , LTD. 1015 Matheson Blvd. Unit #6 Mississauga, Ontario L4W 3A4 TECH TR EK , LTD. 2271 Guenette St. St. Laurent, Quebec H4R 2E9 TECH TR EK , LTD. 155 Terence Matthews Cres., Unit 7, Kanata, Ontano K2M 2A8
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20405S
Nanotec Electronic GmbH
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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Untitled
Abstract: No abstract text available
Text: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s
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KM44C1000ASL
44C1000ASL-
130ns
150ns
10OOASL-10
100ns
20-LEAD
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PDF
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HN27C301
Abstract: HN27C301G HN27C101 HN27C101AG HN27C101G HN27C301AG
Text: HN27C101 AG Series-HN27C301 AG Series 131072-word x 8-bit CMOS UV Erasable and Programmable ROM T he Hitachi HN27C101AG/HN27C301AG is a 1M b it u l tr a v i o le t e ra s a b le a n d e le c tr ic a lly program m able ROM . This device is packaged in a
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HN27C101
HN27C301
131072-word
HN27C101AG/HN27C301AG
32-pin
AG-10/HN27C3
AG-10)
HN27C101AG/HN27C301
AG-12/15/17/20/
HN27C301G
HN27C101AG
HN27C101G
HN27C301AG
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157b
Abstract: No abstract text available
Text: CMOS DRAM KM416C157B/BL/BLL 256K X 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: T h e S a m s u n g K M 4 1 6 C 1 5 7 B /B L /B L L is a C M O S h ig h tR A C tC A C tR C KM 416 C 157B /B L/B LL-5 50ns 15ns
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KM416C157B/BL/BLL
110ns
130ns
150ns
40-LEAD
157b
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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CB-69
14f4g
D 5038 Transistor Horizontal
amplificateur audio a base de transistor
transistor 2n 892 X1
amplificateur BF
transistor ST TYN 616
equivalent of transistor bul 38 da
bd 317 schema
transistor 3055 out hv
ESM214
Transistor bdy 58
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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Untitled
Abstract: No abstract text available
Text: Central Sem icon du ctor Corp. C M P F 4416A SILICON N-CHANNEL JFET DESCRIPTION: The C EN TR AL SEM ICO NDUC TO R CMPF4416A type is an epoxy molded NChannel Silicon Junction Field EffectTran$istor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications.
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CMPF4416A
OT-23
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diode t25 4 HO
Abstract: diode b34 b34 diode 2SJ117 11X1 2SK310 Hitachi Scans-001
Text: blE D 441b2G5 DDIE^IM flbl « H I T H 2SJ117 H ITA CH I/tO PTO ELEC TR O N IC S SILICON P-CHANNEL MOS FET 1 HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK310 • FEATURES • High Breakdown Voltage. • High Speed Switching.
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441bEG5
2SK310
diode t25 4 HO
diode b34
b34 diode
2SJ117
11X1
2SK310
Hitachi Scans-001
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PDF
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M29XP1
Abstract: 20D0 QQ-C-530 TEFLON MIL-P-19468 lt 626
Text: REV. A DATE DESCRIPTION 1 2 /2 9 /0 0 UPDATE PLATING TO SILVER 3.20 [.1 2 6 ] 4.00 [.1 5 8 ] 8.30 [.3 2 7 ] RECOMMENDED CABLE STRIPPING DIM'S M29XP1.5 / cO f\| O o> tr > cm o i_n Csl T - < <J O < -1 1 .2 0 [. 4413- N0TES: FINISH (PLATING THICKNESS IN MICRO-INCHES)
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M29XP1
QQ-B-626
QQ-C-530.
12D-315
213/U,
393/U
20D0
QQ-C-530
TEFLON MIL-P-19468
lt 626
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PDF
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117L7
Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Text: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.
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19JN8
19JN8
117L7
2e22
6JV6
6BM8
12EC8
6au5gt
6HF5
6GH8A
6HB5
12U7
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PDF
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