transistor RCA 467
Abstract: ota ca 3080 RCA 3080 rca CA3080 RCA 467 rca cmos book rca cmos handbook IEEE J. Solid State Circuits, SC "rca application note" rca 1967
Text: R. L. Geiger and E. Sánchez-Sinencio, "Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial," IEEE Circuits and Devices Magazine, Vol. 1, pp.20-32, March 1985. Active Filter Design Using Operational Transconductance Amplifiers: A Tutorial
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2SK2098-01MR
Abstract: 2sk2098
Text: 2SK2098-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers
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2SK2098-01MR
O-220F15
SC-67
2SK2098-01MR
2sk2098
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2SK1946-01MR
Abstract: 2SK1946 ON60
Text: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers
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2SK1946-01MR
O-220F15
SC-67
2SK1946-01MR
2SK1946
ON60
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Untitled
Abstract: No abstract text available
Text: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance
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ICE47N60W
250uA
187nC
O-247
0E-06
0E-05
0E-04
0E-03
0E-02
0E-01
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2SJ477
Abstract: 2SJ477-01MR
Text: 2SJ477-01MR FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F Applications Switching regulators
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2SJ477-01MR
O-220F
2SJ477
2SJ477-01MR
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2SK1946-01MR
Abstract: No abstract text available
Text: 2SK1946-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers
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2SK1946-01MR
O-220F15
SC-67
K1946-01MR
2SK1946-01MR
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2SK2049
Abstract: No abstract text available
Text: 2SK2049 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance TO-220AB Applications Motor controllers General purpose power amplifier
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2SK2049
O-220AB
SC-46
2SK2049
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20V P-Channel Power MOSFET
Abstract: 2SJ475-01 2sj475
Text: 2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators
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2SJ475-01
O-220AB
00A/s
20V P-Channel Power MOSFET
2SJ475-01
2sj475
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2SK2049
Abstract: No abstract text available
Text: 2SK2049 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance TO-220AB Applications Motor controllers General purpose power amplifier
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2SK2049
O-220AB
SC-46
2SK2049
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2SK2098
Abstract: 2SK2098-01MR
Text: 2SK2098-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof TO-220F15 Applications Motor controllers
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2SK2098-01MR
O-220F15
SC-67
2SK2098
2SK2098-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK1088-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1088-MR
O-220F15
SC-67
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TCH-80
Abstract: No abstract text available
Text: 2SK1387-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1387-MR
O-220F15
SC-67
TCH-80
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2SK1087-MR
Abstract: No abstract text available
Text: 2SK1087-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1087-MR
O-220F15
SC-67
2SK1087-MR
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M5010
Abstract: No abstract text available
Text: 2SK1822-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIA SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Including G-S Zener diode TO-220F15
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2SK1822-01MR
O-220F15
SC-67
M5010
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2SK1085-MR
Abstract: 2SK1085MR 2SK1085
Text: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1085-MR
O-220F15
SC-67
2SK1085-MR
2SK1085MR
2SK1085
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2sj475
Abstract: No abstract text available
Text: 2SJ475-01 FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES Features Outline Drawings TO-220AB High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof Applications Switching regulators
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2SJ475-01
O-220AB
2sj475
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2SK1506
Abstract: SC-65
Text: 2SK1506 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier DC-DC converters
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2SK1506
SC-65
2SK1506
SC-65
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2SK1506
Abstract: 2SK1506 equivalent 2sk150 SC-65
Text: 2SK1506 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance Low driving power High forward transconductance TO-3P Applications Motor controllers General purpose power amplifier DC-DC converters
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2SK1506
SC-65
2SK1506
2SK1506 equivalent
2sk150
SC-65
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Untitled
Abstract: No abstract text available
Text: 2SK1098-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1098-MR
O-220F15
SC-67
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Untitled
Abstract: No abstract text available
Text: 2SK1083-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier
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2SK1083-MR
O-220F15
SC-67
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40841 dual gate mosfet
Abstract: AN6668 AN6818 CA3060E 40841
Text: CA3060 fu HARRIS S E M I C O N D U C T O R Operational Transconductance Amplifier Arrays March 1993 Features Description • Low Power Consumption as Low as 100mW Per Amplifier The CA3060 monolithic integrated circuit consists of an array of three independent Operational Transconductance Amplifiers.* This type of
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CA3060
CA3060
100kil
40841 dual gate mosfet
AN6668
AN6818
CA3060E
40841
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2N6761
Abstract: UNITRODE TRANSISTORS SA-A
Text: POWER MOSFET TRANSISTORS AJTX JTXV 500 Volt, 1.5 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance. FEATURES • Fast Switching
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MIL-S-19500/542A
2N6761
UNITRODE TRANSISTORS
SA-A
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2N6799
Abstract: No abstract text available
Text: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel 2N6799 JTX, JTXV 2N6800 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosnm and a high transconductance. FEATURES
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2N6799
2N6800
2N6799
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UFN350
Abstract: UFN351
Text: UFN350 UFN351 UFN352 UFN353 POWER MOSFET TRANSISTORS 400 Volt, 0.3 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low RDscom and a high transconductance. FEATURES
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UFN350
UFN351
UFN352
UFN353
UFN350
UFN351
UFN352
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