DIM200PLM33-A000
Abstract: No abstract text available
Text: DIM200PLM33-A000 DIM200PLM33-A000 IGBT Chopper Module Preliminary Information Replaces issue April 2003, version DS5597-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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DIM200PLM33-A000
DS5597-1
DS5597-2
DIM200PLM33-A000
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eupec igbt
Abstract: IGBT module FZ 600kW
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 200 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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DIM200WLS12-A000
Abstract: bi-directional IGBT
Text: DIM200WLS12-A000 DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control Replaces February 2004 version, issue FDS5697-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate FDS5697-3.0 June 2004 KEY PARAMETERS
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DIM200WLS12-A000
FDS5697-2
FDS5697-3
DIM200WLS12-A000
bi-directional IGBT
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eupec igbt
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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DIM200WKS12-A000
Abstract: No abstract text available
Text: DIM200WKS12-A000 DIM200WKS12-A000 IGBT Chopper Module - Upper Arm Control Replaces February 2004 version, issue PDS5969-2.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5969-3.0 June 2004 KEY PARAMETERS
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DIM200WKS12-A000
PDS5969-2
DS5969-3
DIM200WKS12-A000
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Untitled
Abstract: No abstract text available
Text: Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
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T0340VB45G
T0340VB45G
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DIM200WKS17-A000
Abstract: No abstract text available
Text: DIM200WKS17-A000 DIM200WKS17-A000 IGBT Chopper Module - Upper Arm Control FDS5699-1.1 December 2003 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK)
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DIM200WKS17-A000
FDS5699-1
DIM200WKS17-A000
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DIM200WHS12-E000
Abstract: No abstract text available
Text: DIM200WHS12-E000 DIM200WHS12-E000 Half Bridge IGBT Module PDS5684-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)
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DIM200WHS12-E000
PDS5684-1
DIM200WHS12-E000
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Untitled
Abstract: No abstract text available
Text: WESTCODE An Date:- 23 Aug, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0360NB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0360NB25A
T0360NB25A
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DIM200WLS17-A000
Abstract: 12v AC to DC CIRCUIT DIAGRAM transistor 9009
Text: DIM200WLS17-A000 Chopper Module - Lower Arm Control DS5698-1.2 July 2007 LN25358 FEATURES Non Punch Through Silicon Isolated Copper Baseplate 10 s Short Circuit Withstand Lead Free construction KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) 1700V
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DIM200WLS17-A000
DS5698-1
LN25358)
DIM200WLS17-A000
12v AC to DC CIRCUIT DIAGRAM
transistor 9009
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igbt control servo motor
Abstract: No abstract text available
Text: QIR0620001 Powerex Inc., 173 Pavilion Lane, Youngwood, PA 15697 724 925-7272 www.pwrx.com IGBT H-Series Chopper Module 200/300 Amperes/600 Volts Description: Powerex IGBT modules are designed for use in switching applications. Each Module consists of one IGBT
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QIR0620001
Amperes/600
2025kHz)
igbt control servo motor
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DIM200PHM33-F000
Abstract: No abstract text available
Text: DIM200PHM33-F000 DIM200PHM33-F000 Half Bridge IGBT Module Replaces June 2003 version, issue PDS5606-2.1 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability
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DIM200PHM33-F000
PDS5606-2
PDS5606-3
DIM200PHM33-F000
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FD200R12KE3
Abstract: MJ 800
Text: Technische Information / technical information IGBT-Module IGBT-Modules FD200R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200
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FD200R12KE3
FD200R12KE3
MJ 800
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DF200R12KE3
Abstract: DIODE 200A 600V
Text: Technische Information / technical information IGBT-Module IGBT-Modules DF200R12KE3 Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Tvj= 25°C VCES 1200
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DF200R12KE3
DF200R12KE3
DIODE 200A 600V
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340G
Abstract: LM 949 DIM200WHS17-A000
Text: DIM200WHS17-A000 DIM200WHS17-A000 Half Bridge IGBT Module Replaces issue December 2003, version FDS5673-2.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate FDS5673-3.0 January 2004 KEY PARAMETERS VCES
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DIM200WHS17-A000
FDS5673-2
FDS5673-3
DIM200WHS17-A000
340G
LM 949
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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1000 watts ups circuit diagram with detail
Abstract: MG200J6ES61
Text: MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts A D L J K H M U G N P DETAIL "A" C B U V F E W H Q N Q T S R P R V P W X CN-1 CN-2 P CN-1:7 CN-1:6
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MG200J6ES61
Amperes/600
1000 watts ups circuit diagram with detail
MG200J6ES61
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DIM200PHM33-A000
Abstract: No abstract text available
Text: DIM200PHM33-A000 DIM200PHM33-A000 Half Bridge IGBT Module Preliminary Information Replaces August 2001, version DS5464-3.0 FEATURES DS5464-4.0 October 2001 KEY PARAMETERS • 10µs Short Circuit Withstand VCES ■ High Thermal Cycling Capability VCE sat (typ)
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DIM200PHM33-A000
DS5464-3
DS5464-4
DIM200PHM33-A000
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DIM200MBS12-A000
Abstract: DS55452
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002
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DIM200MBS12-A000
DS5543-1
DS5545-2
DIM200MBS12-A000
DS55452
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was dual transistor
Abstract: DIM200MBS12-A000
Text: DIM200MBS12-A000 DIM200MBS12-A000 IGBT Bi-Directional Switch Module Replaces issue May 2002, version DS5543-1.3 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5545-2.1 June 2002 KEY PARAMETERS VDRM
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DIM200MBS12-A000
DS5543-1
DS5545-2
DIM200MBS12-A000
was dual transistor
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BSM200GA170DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GA 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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BSM200GB170DL
Abstract: BSM200GB170DLC
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 170 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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