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    TRANSISTOR 2067 Search Results

    TRANSISTOR 2067 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2067 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC4047

    Abstract: FC132 marking 132 EN3286
    Text: Ordering number:EN3286 FC132 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=10kΩ, R2=47kΩ). · Composite type with 2 transistors contained in the


    Original     		EN3286 FC132 FC132 2SC4047, FC132] 2SC4047 marking 132 EN3286 PDF

    2SA1563

    Abstract: FC131
    Text: Ordering number:EN3285 FC131 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=10kΩ, R2=47kΩ). · Composite type with 2 transistors contained in the


    Original     		EN3285 FC131 FC131 2SA1563, FC131] 2SA1563 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3116 FC118 FC118 2SC4577, FC118] PDF

    2SA1563

    Abstract: FC131
    Text: Ordering number:EN3285 FC131 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistances (R1=10kΩ, R2=47kΩ). · Composite type with 2 transistors contained in the


    Original     		EN3285 FC131 FC131 2SA1563, FC131] 2SA1563 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3115 FC117 FC117 2SA1753, FC117] PDF

    EN3115

    Abstract: 2SA1753 FC117
    Text: Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3115 FC117 FC117 2SA1753, FC117] EN3115 2SA1753 PDF

    2SC4577

    Abstract: FC118 31161
    Text: Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3116 FC118 FC118 2SC4577, FC118] 2SC4577 31161 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3964 FC149 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3964 FC149 FC149 2SA1813, FC149] PDF

    marking 149

    Abstract: 2SA1813 FC149
    Text: Ordering number:EN3964 FC149 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3964 FC149 FC149 2SA1813, VEBO15V) FC149] marking 149 2SA1813 PDF

    FC150

    Abstract: No abstract text available
    Text: Ordering number:EN3965 FC150 PNP/NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3965 FC150 FC150 2SA1813/2SC4413, FC150] PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3324 FC139 FC139 2SC3689, FC139] PDF

    BD NPN transistors

    Abstract: 2SC5245 FC157
    Text: Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN5433 FC157 FC157 2SC5245, FC157] BD NPN transistors 2SC5245 PDF

    2SC5245

    Abstract: FC157
    Text: Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN5433 FC157 FC157 2SC5245, FC157] 2SC5245 PDF

    FC139

    Abstract: 2SC3689 VEBO-15V
    Text: Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    Original     		EN3324 FC139 FC139 2SC3689, VEBO15V) FC139] 2SC3689 VEBO-15V PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CONDUCTOR CORP 22E D ? ci cl ? Q 7 b FC106 QQQ7 3 7 Q 5 T-35-21 NPN Epitaxial Planar Silicon Com posite Transistor 2067 Switching Applications with Bias Resistances R1=47kO, R2=47kO F e a tu re s • On-chip bias resistors (Ri = 47kQ,R2= 47kfl)


    OCR Scan     		FC106 T-35-21 47kfl) FC106 2SC3395, 4139MO PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 2EE D 7 T c} 7 0 7 b 00073Ö14 FC113 S ~r-37-i3 P N P Epitaxial Pianar S ilico n C o m p o site Transistor 2067 Switching Applications 3031 with Bias Resistances R1=10ki2, R2=10ki2 Features • On-chip bias resistors (Ri = 10kfl,R2=lOkO)


    OCR Scan     		FC113 r-37-i3 10ki2, 10ki2) 10kfl FC113 2SA1344, L0-01 4139MO PDF

    IC TA 31101

    Abstract: pa 2030a equivalent pa 2030a FC102 ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor
    Text: SANYO SEMICONDUCTOR CORP 55E D 7 EH707fci Q D 0 7 M 4 D Q T - Z 7 -Ö 7 FC102 # NPN Epitaxial Planar Silicon Com posite Transistor 2067 Low-Frequency General-Purpose Amp, Differential Amp Applications 3110 F eatu res •Composite type with 2 transistors contained in the CP package currently in use, im proving the


    OCR Scan     		00Q7M40 FC102 FC102 2SC4211, IC TA 31101 pa 2030a equivalent pa 2030a ts 3110 TRANSISTOR 2SC4211 C-03 DDD744S 08/bup 3110 transistor PDF

    TRANSISTOR 2067

    Abstract: No abstract text available
    Text: SANYO S E MI CO ND UCTOR CÔRP SHE D 7‘ =H707b 0 00 737Ô T FC110 T-35-H # N PN Epitaxial Planar Silicon C om posite Transistor 2067 Switching Applications with Bias Resistances R 1=22kfl, R2=22kO 3078 F e a tu re s • On-chip bias resistors (Rj = 22k£l,R2= 22k£i)


    OCR Scan     		FC110 T-35-H 22kfl, FC110 2SC3396, TRANSISTOR 2067 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR CORP 52E D 7TT7Q7b □00737t FC109 b T-37-/3 P N P Epitaxial Planar S ilico n C o m p o site Transistor 2067 Switching Applications with Bias Resistances R1=22ki2, R2=22kn F eatures •On-chip bias resistors (Rj = 22kQ,R2= 22ki2) • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		00737t FC109 T-37-/3 22ki2, 22ki2) FC109 2SA1342, 4139MO PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    EN3081

    Abstract: 2SA1344
    Text: Ordering num ber: EN3081 FC 113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 10k£},R2 = lOkfi • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		EN3081 FC113 2SA1344, EN3081 2SA1344 PDF