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    TRANSISTOR 05F Search Results

    TRANSISTOR 05F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 05F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TSDF1205R

    Abstract: TSDF1205RW TSDF1205W TSDF1205 Transistor TSDF1205R marking W0F
    Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and


    Original     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW TSDF1205R TSDF1205W D-74025 30-Jun-00 TSDF1205RW TSDF1205 Transistor TSDF1205R marking W0F PDF

    Untitled

    Abstract: No abstract text available
    Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and


    Original     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW TSDF1205 TSDF1205R D-74025 30-Jun-00 PDF

    TSDF1205RW

    Abstract: TSDF1205 TSDF1205R TSDF1205W
    Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and


    Original     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW TSDF1205R TSDF1205W D-74025 30-Jun-00 TSDF1205RW TSDF1205 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and


    Original     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW TSDF1205R TSDF1205W D-74025 30-Jun-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and


    Original     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW TSDF1205 TSDF1205R D-74025 20-Jan-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and


    Original     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW TSDF1205 TSDF1205R D-74025 30-Jun-00 PDF

    TSDF1205R

    Abstract: TSDF1205
    Text: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.


    Original     		TSDF1205/TSDF1205R TSDF1205 TSDF1205R D-74025 28-Oct-97 PDF

    Untitled

    Abstract: No abstract text available
    Text: Construction and Characteristics www.vishay.com Vishay OS-CON Solid Aluminum Capacitors with Organic Semiconductor Electrolyte VISHAY OS-CON SEMICONDUCTOR Inorganic Semiconductor Element: Si, Ge, Ga, etc. Transistor, Diode IC LED Organic Semiconductor (Element: C, H, N, etc.)


    Original     		05-Feb-14 PDF

    KTD1304

    Abstract: No abstract text available
    Text: KTD1304 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 3 1 2 SOT-23 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 12 V Collector Current-Continuous IC


    Original     		KTD1304 OT-23 05-Feb-09 100MHz OT-23 KTD1304 PDF

    MARKING WY SOT-89

    Abstract: WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO
    Text: KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5


    Original     		KTA1666 OT-89 05-Feb-09 OT-89 500TYP MARKING WY SOT-89 WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO PDF

    0A4B

    Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		AN529 PIC16C5X PIC16C5X DS00529E-page 0A4B keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard PDF

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


    Original     		AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B PDF

    Untitled

    Abstract: No abstract text available
    Text: KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5


    Original     		KTA1666 OT-89 05-Feb-09 OT-89 500TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: STTH310-Y Automotive high voltage ultrafast rectifier Datasheet - production data Description A The STTH310-Y, which is using ST’s new 1000 V planar technology, is especially suited for switching mode base drive and transistor circuits. K A The device is also intended for use as a


    Original     		STTH310-Y STTH310-Y, STTH310UFY DocID025643 PDF

    Untitled

    Abstract: No abstract text available
    Text: T fmtt TSDF1205/TSDF1205R Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain


    OCR Scan     		TSDF1205/TSDF1205R TSDF1205 TSDF1205R D-74025 28-Oct-97 PDF

    GC27980

    Abstract: No abstract text available
    Text: SGS-THOMSON ï ULKgraMOeS £j STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP60N 05 STP60N 05FI V dss RDS on Id 50 V 50 V < 0.0 2 Q. < 0.0 2 Q. 60 A 32 A . Q . . TYPICAL RDs(on) = 0.017 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED


    OCR Scan     		TP60N STP60N STP60N05 STP60N05FI GC27980 PDF

    ss2200

    Abstract: No abstract text available
    Text: SGS-THOMSON STP25N05 STP25N05FI ilLiOIFlfiMDtgi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STP25N 05 STP25N 05FI R D S o n Id 0 .0 6 5 SI 0 .0 6 5 a 25 A 16 A dss 50 V 50 V . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		STP25N05 STP25N05FI STP25N O-220 ISOWATT221 STP25N05/FI ss2200 PDF

    HI SPEED, HI CURRENT, TO-220, TRANSISTOR

    Abstract: No abstract text available
    Text: SGS-THOMSON IIL IIO T *! STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP30N 05 S TP30N 05FI V dss RDS on 50 V 50 V 0 .0 5 n 0 .0 5 Q Id ' 30 A 18 A . • . . . . AVALANCHE RU G G EDN ESS TECHNOLOG Y 100% AVALANCHE TESTED


    OCR Scan     		STP30N05 STP30N05FI TP30N ATT220 STP30N05/FI HI SPEED, HI CURRENT, TO-220, TRANSISTOR PDF

    STP40N

    Abstract: No abstract text available
    Text: £jï 40 05 40 05 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP40N 05 STP40N 05FI V dss RDS on Id 50 V 50 V < 0 .0 3 5 Q. < 0 .0 3 5 Q. 40 A 23 A TYPICAL R D S (on) = 0.03 £2 . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		TP40N STP40N PDF

    TP25N05

    Abstract: TP25N
    Text: £jï 25 05 25 05 SGS-THOMSON ULKgraMOeS STP N STP N FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TP25N 05 STP25N 05FI . . . . . . . . dss 50 V 50 V RDS on Id < 0 .0 6 5 Q. < 0 .0 6 5 Q. 25 A 16 A TYPICAL R DS(on) = 0.048 Q. AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		TP25N STP25N TP25N05 PDF

    TSD200N05V

    Abstract: schematic diagram UPS TSD200N05F smps&ups
    Text: JIO E^ D • 7 ^ 2 3 7 J303QbQ0 ''T ^ S ■ TSD200N05F TSD200N05V SGS-THOMSON ItLIKglMKS s "15 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE G s-th o m so n ADVANCE DATA TYPE T S D 200N 05F /V V R dss 50 V d s o i I Id 0.006 n 200 A ■ VERY HIGH DENSITY POWER MOS


    OCR Scan     		m330bQG TSD200N05F TSD200N05V TSD200N05F/V T-91-20 O-240) TSD200N05V schematic diagram UPS TSD200N05F smps&ups PDF

    IB 115

    Abstract: 2n2907aub sot transistor pinout JANTXV2N2907A
    Text: 0 .O P I E K Product Bulletin JANTX, JANTXV, 2N2907AUB September 1996 Surface Mount PNP General Purpose Transistor Type JANTX, JANTXV, 2N2907AUB .036 0.9 I .024 (0.61) f=ghi .023 (0.5B) .017 (0.43) .039 (0.99) '.035 (0.08) .078 (1.98) .071 (i.eo) COLLECTOR


    OCR Scan     		2N2907AUB 2N2907AUB OT-23 MIL-PRF-19500/291 V2N2907AU 05fl0 IB 115 sot transistor pinout JANTXV2N2907A PDF

    K2662

    Abstract: L122M 5Ft marking
    Text: TO SHIBA 2SK2662 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2662 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance • High Forward Transfer Admittance : |Yfs|= 4.0S(Typ.)


    OCR Scan     		2SK2662 K2662 L122M 5Ft marking PDF

    un transistor 1205

    Abstract: No abstract text available
    Text: Y TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For low noise and sm all signal low pow er am plifiers, This tra n sisto r has superior noise figure and


    OCR Scan     		TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW 1205R 20-Jan-99 un transistor 1205 PDF