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    TRANSISTOR 0618 Search Results

    TRANSISTOR 0618 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 0618 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


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    0A4B

    Abstract: keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


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    PDF AN529 PIC16C5X PIC16C5X DS00529E-page 0A4B keypad 4x4 7 segment display 4x4 matrix keypad membrane 4x4 matrix keypad and microcontroller 4X4 HEX KEY PAD keypad membrane 4X4 LTC3710G hex keypad 4x4 hex keypad 7 segment display 4x4 keyboard

    4X4 HEX KEY PAD

    Abstract: keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


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    PDF AN529 PIC16C5X PIC16C5X 4X4 HEX KEY PAD keypad membrane 4X4 4x4 hex keypad with microcontroller 4x4 hex keypad hex keypad 4-DIGIT 7-SEGMENT LED DISPLAY AN529 LTC3710G 061c 065B

    4x4 matrix keypad in pic with c code

    Abstract: 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic
    Text: AN529 Multiplexing LED Drive and a 4x4 Keypad Sampling Author: drive of the LEDs is possible, because of the high sink and source capabilities of PIC16C5X microcontroller, thus eliminating the use of an external drive transistor, and results in a reduction in both cost and complexity of


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    PDF AN529 PIC16C5X PIC16C5X D-81739 4x4 matrix keypad in pic with c code 108 046f keypad 4x4 c code for dspic 4X4 HEX KEY PAD keypad membrane 4X4 big 4-digit seven segment led display pic 4x4 matrix keypad dspic LTC3710G 4x4 hex keypad keypad 4x4 c code for pic

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    EC21P

    Abstract: No abstract text available
    Text: AIC1730 150mA, Low Noise, Low Dropout Linear Regulator FEATURES DESCRIPTION Very Low Quiescent Current, 55µA Very Low Dropout Voltage, 90mV @ 50mA. Short Circuit and Thermal Protection. Available in ±2% Output Tolerance. 1.8V to 3.3V Output Voltage with 0.1V Increment.


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    PDF AIC1730 150mA, OT-23-5 AIC1730 EC21P

    MLO81100-01850

    Abstract: No abstract text available
    Text: Surface Mount Voltage Controlled Oscillator DCS 1800 - 1900 MHz MLO81100-01850 V3.00 Features ● ● ● ● LSM1 Package Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Highly Linear Tuning 4.0 12.7 11.8 0.8 IDENT VCC M/A-COM VT


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    PDF MLO81100-01850 MLO81100-01850

    mlo80100-00

    Abstract: No abstract text available
    Text: Surface Mount Voltage Controlled Oscillator EGSM 920 - 960 MHz MLO80100-00940 V3.00 Features ● ● ● ● LSM1 Package Miniature Size Surface Mount Package Electrically Shielded Low Phase Noise Highly Linear Tuning 4.0 12.7 11.8 0.8 IDENT VCC M/A-COM VT


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    PDF MLO80100-00940 MLO80100-00940 mlo80100-00

    diode C622

    Abstract: transistor C622 transistor g23 IRGB420UD2
    Text: P D - 9.1066 bitemational [ïor]Rectifier IRGB420UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


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    PDF IRGB420UD2 O-22QAB TQ-220AB diode C622 transistor C622 transistor g23 IRGB420UD2

    transistor 2SB673

    Abstract: 2SB673 2SB675 2SD635 transistor 2SB673 equivalent transistor Toshiba transistor NPN Ic 50A 2SD633 AC75
    Text: TOSHIBA 2SD633,2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD633, 2SD635 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • High DC Current Gain : hjPE = 2000 Min. • Low Saturation Voltage :


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    PDF 2SD633 2SD635 2SD633, 2SB673 2SB675. transistor 2SB673 2SB675 2SD635 transistor 2SB673 equivalent transistor Toshiba transistor NPN Ic 50A AC75

    transistor 0618

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR M EDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS VCBO = 1700V VCE sat = 3V (Max.) tf=0.15/¿s (Typ.)


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    PDF 2SC5422 transistor 0618

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage


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    PDF 2SC5422

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD633,2SD635 2SD633, 2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS U nit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10.3MAX. 03.6 ± 0.2 I-1 / • • • p r


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    PDF 2SD633 2SD635 2SD633, 2SB673 2SB675. 2SD633

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    Beckman 661

    Abstract: 661 Beckman MRF134
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r


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    Pulse Transformer ZKB

    Abstract: siemens transformer Pulse Transformer VAC ZKB TRANSISTOR SMD MARKING CODE 1P 702 Z smd TRANSISTOR zkb 416 TRANSISTOR SMD MARKING CODE 702 zkb* vac smd transistor n48 vac zkb
    Text: SIEM ENS Digital Terminal ICs sv o ^ s SX * * * * S ICs for Communications Power Controller PSB 2120 PSB 2121 Data Sheets 12.92 "*• 0 3 1 3 4 PSB 2120; PSB 2121 Revision History: Original Version 12.92 Previous Releases: Page Subjects changes since last revision


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    PDF B115-H6622-X-X-7600 Pulse Transformer ZKB siemens transformer Pulse Transformer VAC ZKB TRANSISTOR SMD MARKING CODE 1P 702 Z smd TRANSISTOR zkb 416 TRANSISTOR SMD MARKING CODE 702 zkb* vac smd transistor n48 vac zkb

    Untitled

    Abstract: No abstract text available
    Text: ? i'i CW 005046 7 GENNUM ^0<i s> o • a 500 63 1 LAy 1u (rNM ■ AQ i n o " PRELIMINARY DATA SHEET LOW VOLTAGE WIDEBAND RF AMPLIFIER low power, single supply operation with application flexibility • 1 to 5 vo lt o p e ra tio n • 30 M H z b a n d w id th


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    LA910

    Abstract: biomedical
    Text: p-iH lJAy< o ^ f 005046 |;i 7 11111»G EIM NUM • L#\y i u rN m ¡!|l!r I AO i n PRELIMINARY DATA SHEET C O R P O R A T I O N a»-*-1 LOW VOLTAGE WIDEBAND RF AMPLIFIER low power, single supply operation with application flexibility • 1 to 5 volt operation


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    PDF LA910 biomedical

    Untitled

    Abstract: No abstract text available
    Text: I II C3EIMIMUM ^flullr C O R P O R A T I Low Voltage - Low Power Operational Amplifier LC810 O N PRELIMINARY DATA SHEET DESCRIPTION FEATURES • low voltage design - operates down to1.0 V total supply voltage • low power consumption - 200 pA typical quiescent supply current


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    PDF LC810 LC810

    LC403D

    Abstract: agc for sonar gennum
    Text: GENNUM C O R P O R A T I High Performance AGC Amplifier LC403 O N DATA SHEET APPLICATIONS FEATURES • Voice recognition and voice control system s h ig h sta b ility o f o u tp u t level • 40 dB AGC operating range Public addresss system s • G round to air and ground to ground voice com m unication


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    PDF LC403 30mVpp 300mVpp 60mVpp LC403D agc for sonar gennum

    telecoil

    Abstract: No abstract text available
    Text: r ^ C IV IIV II Mi l S F ! ? l r M iy ! LC 508 Class A A m plifier w ith 3 Independent Gain Blocks DATA SHEET FEATURES DESCRIPTION • 1 nV input referred noise The LC508 is a 10 pin Class A amplifier utilizing Gennum's proprietary low voltage bipolar JFET technology. It consists of


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    PDF LC508 12dB/oct telecoil

    A7s TRANSISTOR

    Abstract: free transistor a7s
    Text: GENNUM C O R P O R A T I □ N a-7s GENLINX D2 SERIAL DIGITAL CABLE EQUALIZER - GS9006A Preliminary Data Sheet FEATURES DEVICE DESCRIPTION • automatic equalization up to 350 metres of 8281 cable at 143 MB/s data rates. The Gennum G ENLINXGS9006A is a monolithic automatic


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    PDF GS9006A GS9006A A7s TRANSISTOR free transistor a7s

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Surface Mount Voltage Controlled Oscillator PCS 1930 - 1990 MHz ML081100-01960 V3.00 Features LSM1 Package • M in ia tm e Size • • • • 4.0 Surface M o u n tP a ck a g e Electrically Shielded Low Phase N oise H ighly L inear Tuning


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    PDF ML081100-01960

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Surface Mount Voltage Controlled Oscillator EGSM 920 - 960 MHz ML080100-00940 V3.00 Features LSM1 Package • M in ia tm e Size • • • • 4.0 Surface M o u n tP a ck a g e Electrically Shielded Low Phase N oise H ighly L inear Tuning


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    PDF ML080100-00940