TRANSISTOR 10 Search Results

TRANSISTOR 10 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CTA4100A Abstract: No abstract text available Text: Relays and Timers www.factorymation.com Digital Timers/Counters/Tachometers 6 1/1IN D Part Number Input Voltage Description CTA4000A 100–240VAC Output 1: Transistor/Relay comb. Output 2: Transistor CTA4000D 24VDC Output 1: Transistor/Relay comb. Output 2: Transistor	Original	CTA4000A 240VAC CTA4000D 24VDC CTA4100A CTA4100D 12VDC 100mA CTA4100A	PDF
Japanese Transistor Abstract: RTGN141AP RTGN141 rtgn14 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN141AP PRELIMINARY TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN141AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=10kΩ,R2=10kΩ）	Original	RTGN141AP RTGN141AP Japanese Transistor RTGN141 rtgn14	PDF
RTGN234AP Abstract: rtgn234 Japanese Transistor isahaya transistor electronics Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN234AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN234AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=2.2kΩ,R2=10kΩ）	Original	RTGN234AP RTGN234AP rtgn234 Japanese Transistor isahaya transistor electronics	PDF
transistor marking DG Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one	Original	OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor	PDF
RTGN14BAP Abstract: 4503 swithing rtgn14 Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A	Original	RTGN14BAP RTGN14BAP 4503 swithing rtgn14	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
NPN EBC SOT-23 Abstract: SOT-23 EBC NPN transistor ECB TO-92 Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003	Original	PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92	PDF
RTGN432P Abstract: No abstract text available Text: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN432P TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN432P is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=4.7kΩ,R2=10kΩ） ● High collector current IC=1A	Original	RTGN432P RTGN432P	PDF
KIA78pI Abstract: transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78pI transistor KIA78p TRANSISTOR 2N3904 khb9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb2D0N60P	PDF
khb9D5N20P Abstract: khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC	Original	2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb9D5N20P khb9d0n90n 6v Zener diode khb2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor	PDF
2SA1841 Abstract: No abstract text available Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10	Original	2SA1841 2SA1841 MP-10	PDF
65c6380 Abstract: IPP65R380C6 IPB65R380C6 SJ 49A ipa65r Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.0, 2010-10-22 Final Industrial & Multimarket 650V CoolMOS™ C6 Power Transistor 1 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6	Original	IPx65R380C6 IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 65c6380 IPP65R380C6 IPB65R380C6 SJ 49A ipa65r	PDF
STD123ASF Abstract: No abstract text available Text: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	STD123ASF 100mA OT-23F KST-2029-001 500mA, STD123ASF	PDF
Untitled Abstract: No abstract text available Text: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	STD123ASF 100mA STD123ASF OT-23F KST-2029-001	PDF

Untitled Abstract: No abstract text available Text: STD123AS Semiconductor NPN Silicon Transistor Features • • • • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. Ordering Information	Original	STD123AS 100mA STD123AS OT-23 KSD-T5C016-001	PDF
Untitled Abstract: No abstract text available Text: UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES 1 2 3 Collector-Emitter Voltage: VCES = 30V Collector Power Dissipation: Pc max = 1000 mW 4 SOT-223 1:EMITTER ABSOLUTE MAXIMUM RATINGS	Original	PZTA14 PZTA14 OT-223 SYMBO1000 100mA 100mA 100MHz QW-R207-004	PDF
2SD596A Abstract: transistor DV3 D1788 2SB624 Text: DATA SHEET SILICON TRANSISTOR 2SD596A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA)	Original	2SD596A 2SB624 2SD596A transistor DV3 D1788	PDF
MPSA11 Abstract: MPS-a10 MPSA10 100MHZ transistor emitter collector base Text: MPSA 10 / 11 NPN Silicon Epitaxial Planar Transistor VHF / UHF TRANSISTOR. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package	Original	100MHZ MPSA10 MPSA11 MPSA11 MPS-a10 MPSA10 100MHZ transistor emitter collector base	PDF
mcl610 Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601 Text: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 MCL600 MCL610 MCT81 MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601	PDF
MCT8 opto Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35 Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR	OCR Scan	MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35	PDF
97CC Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18 Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection	OCR Scan	CB-19 97CC transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18	PDF
transistor Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP Text: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)	OCR Scan	2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 BC327 BC328 BC337 BC338 transistor transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR MODULE SQQ300AA100 UL;E76102 M S Q D 3 0 0 A A 10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	OCR Scan	SQQ300AA100 E76102 SQD300AA100	PDF
1G05 Abstract: 2SA1078 2SC2528 Text: FUJITSU SILICON HIGH SPEED POWER TRANSISTOR 2SA 1078 September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET -a G The 2 S A 1 0 7 8 is a silicon PNP general purpose, m edium pow er transistor fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) technology. R E T devices are	OCR Scan	2SA1078 2SA1078 2SC2528, 10MHz 20VilE 300ms 1G05 2SC2528	PDF

TRANSISTOR 10 Search Results

TRANSISTOR 10 Result Highlights (5)

TRANSISTOR 10 Datasheets Context Search

CTA4100A

Japanese Transistor

RTGN234AP

transistor marking DG

RTGN14BAP

MN1280

NPN EBC SOT-23

RTGN432P

KIA78*pI

khb*9D5N20P

2SA1841

65c6380

STD123ASF

Untitled

Untitled

Untitled

2SD596A

MPSA11

mcl610

MCT8 opto

97CC

transistor

Untitled

1G05