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    TRANSISTOR 1000V Search Results

    TRANSISTOR 1000V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 1000V 6A

    Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
    Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SQD300AA100 E76102 SQD300AA100 SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor

    IC A 3120

    Abstract: Transistor AC 51 transistor case To 105 a 3120 ic diode 400A 8A TRANSISTOR M6 transistor SQD400AA120 transistor VCE 1000V SQD400AA100
    Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 M SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original     		PDF SQD400AA100 E76102 SQD400AA100 SQD400AA120 IC A 3120 Transistor AC 51 transistor case To 105 a 3120 ic diode 400A 8A TRANSISTOR M6 transistor SQD400AA120 transistor VCE 1000V

    702 TRANSISTOR

    Abstract: SQD400AA100
    Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original     		PDF SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V 702 TRANSISTOR

    IC A 3120

    Abstract: Transistor AC 51 bx transistor a 3120 ic VCEX1000V SQD400AA100 derating factor
    Text: TRANSISTOR MODULE SQD400AA100 UL;E76102 （M） SQD400AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    Original     		PDF SQD400AA100 E76102 SQD400AA100 113max. 100msec10sec 1msec100msec VCC600V IC A 3120 Transistor AC 51 bx transistor a 3120 ic VCEX1000V derating factor

    QM10HB-2H

    Abstract: TRANSISTOR QM10HB-2H qm10hb2h transistor VCE 1000V E80276 DSA0019989 transistor 1000V 1000V 20A transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE QM10HB-2H • • • • • IC Collector current . 10A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 5


    Original     		PDF QM10HB-2H E80276 E80271 QM10HB-2H TRANSISTOR QM10HB-2H qm10hb2h transistor VCE 1000V E80276 DSA0019989 transistor 1000V 1000V 20A transistor

    NTE2311

    Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
    Text: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V


    Original     		PDF NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


    Original     		PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    NPN Transistor VCEO 1000V

    Abstract: 2SC2688 2SC2688L transistor T 023 XT60
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-K 2SC2688L-x-T60-K NPN Transistor VCEO 1000V 2SC2688L transistor T 023 XT60

    2SC2688

    Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K O-126 QW-R204-023 NPN Transistor VCEO 1000V 2SC2688L NPN SILICON TRANSISTOR

    2SC2688

    Abstract: 2SC2688L NPN Transistor VCEO 1000V
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES 1 * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) O-126 2SC2688L 2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K 2SC2688L NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ403A O220AB

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ303B O220AB

    2SC2688

    Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR „ DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. „ FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF


    Original     		PDF 2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126 NPN Transistor VCEO 1000V TRANSISTOR 023

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ106A O220AB

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ403A Silicon Diffused Power Transistor Product specification December 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ403A BUJ403A O220AB

    vvvf motor

    Abstract: 600v 100a servo motors QCA100AA100 QCA100AA120 dc motor control 100A 1000V 20A transistor E76102 transistor 2A
    Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 M QCA100AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    Original     		PDF QCA100AA100 E76102 QCA100AA100 QCA100AA120 vvvf motor 600v 100a servo motors QCA100AA120 dc motor control 100A 1000V 20A transistor transistor 2A

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ103A O220AB SCA60 135104/240/02/pp12

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    BUJ103AX

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ103AX BUJ103AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ103AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ106A Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ106A BUJ106A O220AB

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    OCR Scan     		PDF SQD400AA100 SQD400AA10 -400A

    t25000

    Abstract: QM10HB-2H
    Text: MITSUBISHI TRANSISTOR MODULES QM10HB-2H DRIVE USE FOR HIGH POWER TRANSISTOR _ INSULATED TYPE 1 j j QM10HB-2H • lc Collector c u rre n t. 10A • V cex Collector-em itter v o lta g e . 1000V j


    OCR Scan     		PDF QM10HB-2H E80276 E80271 t25000 QM10HB-2H