TRANSISTOR 1000V 6A Search Results

TRANSISTOR 1000V 6A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 1000V 6A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
QM30DY-2H Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type	OCR Scan	QM30DY-2H E80276 E80271 QM30DY-2H	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM300DY-2H E80276 E80271	PDF
Diode B2x Abstract: diode 6A 1000v E80276 QM300DY-2H Welder Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75	Original	QM300DY-2H E80276 E80271 Diode B2x diode 6A 1000v E80276 QM300DY-2H Welder	PDF
QM150DY-2HB Abstract: E80276 QM150DY-2HBK QM150DY-2H QM15 Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750	Original	QM150DY-2HBK E80276 E80271 QM150DY-2HB E80276 QM150DY-2HBK QM150DY-2H QM15	PDF
E80276 Abstract: QM300DY-2HB Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750	Original	QM300DY-2HB E80276 E80271 E80276 QM300DY-2HB	PDF
QM300HA-2H Abstract: 1000V 20A transistor QM300HA-2H equivalent E80276 9303C Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75	Original	QM300HA-2H E80276 E80271 108MAX. 62MAX. 36MAX. QM300HA-2H 1000V 20A transistor QM300HA-2H equivalent E80276 9303C	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30DY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM30DY-2H 30DY-2H E80276 E80271	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM30HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30HY-2H Ic Collector current. 30A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM30HY-2H 30HY-2H E80276 E80271	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM800HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM800HA-2HB lc Collector current. 800A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain.750 Insulated Type UL Recognized	OCR Scan	QM800HA-2HB E80276 E80271	PDF
d 5287 Abstract: 2SC5264 Text: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm	Original	ENN5287 2SC5264 2079C 2SC5264] O-220FI-LS 10Ltd. d 5287 2SC5264	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 300H A-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized	OCR Scan	QM300HA-2H E80276 E80271	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75	OCR Scan	QM30E2Y/ QM30E2Y/E3Y-2H E80276 E80271	PDF
QM300HA-2H Abstract: No abstract text available Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H lc V cex Collector current. Collector-emitter voltage. DC current gain . hre Insulated Type UL Recognized 30QA j 1000V 75 Yellow Card No. E80276 <N	OCR Scan	QM300HA-2H E80276 E80271 rQrr10' QM300HA-2H	PDF
STU6NA100 Abstract: No abstract text available Text: STU6NA100 N - CHANNEL 1000V - 1.45Ω - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V < 1.7 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED	Original	STU6NA100 Max220 100oC STU6NA100	PDF

TIC 136 Transistor Abstract: No abstract text available Text: STU6NA100 N - CHANNEL 1000V - 1 .45ß - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S T U 6N A 100 1000 V R dS oii Id a 6 A < 1 .7 . TYPICAL RDs(on) = 1.45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	STU6NA100 Max220 Max220 TIC 136 Transistor	PDF
Untitled Abstract: No abstract text available Text: STU 6N A100 N - CHANNEL 1000V - 1 .45Q - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE S T U 6 N A 1 00 V dss 1000 V RDS on < 1.7 Q. Id 6A • TYPICAL R D S (on) = 1 .45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C	OCR Scan	Max220	PDF
TRANSISTOR BDX Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184 Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T	OCR Scan	BUV48 BUV47 O-22CIAB CB-117 BUV37 CB-244 CB-285 TRANSISTOR BDX TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184	PDF
pnp transistor 1000v Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48 Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A	OCR Scan	BUV48 BUV47 CB-244 CB-285 pnp transistor 1000v transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48	PDF
5011s Abstract: 2SC3846 Text: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range	OCR Scan	374T7b2 2SC3846 2SC3846 D01bb37 5011s	PDF
2SC5521 Abstract: 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546 Text: New Horizontal Deflection Transistor Series for TV • Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safeoperation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced	Original	500V/1600V/1700V/1800V/2000V 2SC5521 2SC5522 2SC5584 2sc5524 2SC5517 2SC5516 2SC5516 equivalent 2sc5572 2SC5622 2SC5546	PDF
NPN Transistor VCEO 1000V Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:	Original	NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A	PDF
transistor 1000V 6A Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for	Original	SQD300AA100 E76102 SQD300AA100 SQD300AA120 transistor 1000V 6A diode 6A 1000v transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor	PDF
QCA150AA100 Abstract: QCA150AA120 24TRANSISTOR E76102 Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated	Original	QCA150AA100 E76102 QCA150AA100 QCA150AA120 QCA150AA120 24TRANSISTOR	PDF
KS621K30 Abstract: transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V Text: POWBÌEX KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in	OCR Scan	KS621K30 Amperes/1000 KS621K30 transistor S56 transistor s55 lem lc 300 KS621 powerex ks62 transistor VCEO 1000V	PDF

TRANSISTOR 1000V 6A Search Results

TRANSISTOR 1000V 6A Result Highlights (5)

TRANSISTOR 1000V 6A Datasheets Context Search

QM30DY-2H

Untitled

Diode B2x

QM150DY-2HB

E80276

QM300HA-2H

Untitled

Untitled

Untitled

d 5287

Untitled

Untitled

QM300HA-2H

STU6NA100

TIC 136 Transistor

Untitled

TRANSISTOR BDX

pnp transistor 1000v

5011s

2SC5521

NPN Transistor VCEO 1000V

transistor 1000V 6A

QCA150AA100

KS621K30