TRANSISTOR 1000W Search Results

TRANSISTOR 1000W Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 1000W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055	PDF
HVV1011-1000L Abstract: transistor 1000W 1000w power supply 1030 PULSED Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor	Original	HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXX2 transistor 1000W 1000w power supply 1030 PULSED	PDF
diode gp 429 Abstract: HVV1011-1000L interrogator transistor 1000W Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor	Original	HVV1011-1000L on/18us HVV1011-1000L on/18 429-HVVi EG-01-POXXXX 07/XX/09 diode gp 429 interrogator transistor 1000W	PDF
AVF1000 Abstract: c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w Text: AVF1000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVF1000 is a common base transistor Designed for pulsed systems Applications up to 1090 MHz. PACKAGE STYLE .450 BAL FLG B A B .120 x 45° 1 E D FEATURES: FULL R C M 2 3 .208 • Internal Input/Output Matching Networks	Original	AVF1000 AVF1000 000W/1090 c 1685 transistor 1334 transistor 1000W 1000W TRANSISTOR NPN 1000w	PDF
smps 1000W Abstract: smps 2000W 2000w smps smps 2000W circuit 1000w smps circuits smps design 1000w 1000W mosfet SGSF663 npn 1000V 100a smps 1000w circuit Text: 7T2‘Ï237 002122=1 ô • "T'-iV/' S G S -T H O M S O N S G S F 663 HLHOTTRMOlSi S 6 S-TH0MS0N 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIG H S W IT C H IN G SPEED NPN POWER TRANSISTOR . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLIC A	OCR Scan	SGSF663 70kHz smps 1000W smps 2000W 2000w smps smps 2000W circuit 1000w smps circuits smps design 1000w 1000W mosfet SGSF663 npn 1000V 100a smps 1000w circuit	PDF
Untitled Abstract: No abstract text available Text: 7 T 2 ‘Ï 2 3 7 002122=1 ô • " T ' - i V / ' S G S -T H O M S O N S G S F 663 HLHOTTRMOlSi S 6 S-TH0MS0N 30E » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■ HIG H S W IT C H IN G SPEED NPN POWER TRANSISTOR . HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLIC A	OCR Scan	70kHz SGSF663	PDF
transistor 1000W Abstract: 1030 Text: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	MAPRST1030-1KS transistor 1000W 1030	PDF
Untitled Abstract: No abstract text available Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of	Original	0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS,	PDF
J294 Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of	Original	0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W	PDF
transistor 1000W Abstract: transistor ballast 1000W NPN 1000w MAPRST1030-1KS 1030 mhz Text: MAPRST1030-1KS Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10 s Pulse, 1% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	MAPRST1030-1KS transistor 1000W transistor ballast 1000W NPN 1000w MAPRST1030-1KS 1030 mhz	PDF
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606	PDF
1000w inverter PURE SINE WAVE schematic diagram Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design	Original		PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF

HV1011-1000L Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness	Original	HV1011-1000L 1090MHz.	PDF
transistor ballast 1000W Abstract: transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor Text: AVIONICS PULSED POWER TRANSISTOR 1000 WATTS, 1030 MHz, 10us PULSE, 1% DUTY 23 Jan 2007 Outline Drawing Features • • • • • • • • • MAPRST1030-1KS NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation	Original	MAPRST1030-1KS transistor ballast 1000W transistor 1000W 1030 mhz 1000W TRANSISTOR MAPRST1030-1KS J22 transistor	PDF
J264 Abstract: No abstract text available Text: ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold	Original	ITC1100 ITC1100 1030MHz, J264	PDF
Untitled Abstract: No abstract text available Text: A DESCRIPTION GE PACKAGE The high power HVV0405-1000 device is a high voltage silicon enhancement mode RF transistor designed for UHF-band pulsed RADAR applications operating over the frequency range of 420 MHz to 470 MHz. FEATURES High Power Gain Excellent Ruggedness	Original	HVV0405-1000 HV1230 MIL-STD-883,	PDF
transistor DF 50 Abstract: transistor 1000W 1030mhz 1000W TRANSISTOR ITC1100 1000W TRANSISTOR POWER Text: R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold	Original	ITC1100 ITC1100 1030MHz, transistor DF 50 transistor 1000W 1030mhz 1000W TRANSISTOR 1000W TRANSISTOR POWER	PDF
0405-1000M Abstract: J307 Text: 0405-1000M Rev C . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull	Original	0405-1000M 0405-1000M 25oC1 J307	PDF
df transistor Abstract: 1000W TRANSISTOR 1030mhz ITC1000 DF 1 transistor 1000W Text: R.A.P.990305-BEHRE ITC1000 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold	Original	990305-BEHRE ITC1000 ITC1000 1030MHz, df transistor 1000W TRANSISTOR 1030mhz DF 1 transistor 1000W	PDF
J307 Abstract: 0405-1000M J293 Text: 0405-1000M R3 . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull configuration at three hundreds microsecond pulse width ten percent duty	Original	0405-1000M 0405-1000M 25oC1 Col869-2324 J307 J293	PDF
UPA57C Abstract: PA57C 300B 4 npn transistor ic 14pin PA57C upa57 Text: NEC j b =7 > '> 9 C om pound T ransistor //PA57C NPN X fc: ^ * * > 7 J it t e r lJ =1 y — ij > h > h =7 h =7 > ¿> 79 U>T LED, NPN Silicon Epitaxial Darlington Transistor Array LED, amp Driver ¿¿PA57CÜ, l t f - > h 9~> =J > h 7 > v X 9 b \|J > F > l ' 7 > y X j ' T l / ' i	OCR Scan	uPA57C PA57CÜ UPA57C PA57C 300B 4 npn transistor ic 14pin *PA57C upa57	PDF
EVK31-050 Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050 Text: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E \| 223fl7T2 0 0 0 0 7 4 6 3 \| The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr	OCR Scan	480VAC 50AV75A, fa100 ETG81-050 ETK81-050 ETK85-050 ETL81-050 ET127* ETM36-030* ETN36-030* EVK31-050 EVL31-050 EVM31-050 EVF31T-050A EVK71-050 EV1234M EVG31-050 ET1266M	PDF

TRANSISTOR 1000W Search Results

TRANSISTOR 1000W Result Highlights (5)

TRANSISTOR 1000W Datasheets Context Search

rjh3047

HVV1011-1000L

diode gp 429

AVF1000

smps 1000W

Untitled

transistor 1000W

Untitled

J294

transistor 1000W

RJP63k2

1000w inverter PURE SINE WAVE schematic diagram

RJJ0319DSP

Transistor 2SA 2SB 2SC 2SD

HV1011-1000L

transistor ballast 1000W

J264

Untitled

transistor DF 50

0405-1000M

df transistor

J307

UPA57C

EVK31-050