PH3230
Abstract: SOT669-LFPAK sot669 package
Text: PH3230 N-channel enhancement mode field-effect transistor M3D748 Rev. 03 — 25 June 2003 Product data 1. Description The latest generation N-channel enhancement mode field-effect power transistor in a SOT669 LFPAK package. Product availability: PH3230 in SOT669 (LFPAK).
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PH3230
M3D748
OT669
PH3230
SOT669-LFPAK
sot669 package
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smd optocoupler
Abstract: TCMT1020 TCMT1021 TCMT1024 TCMT1022 TCMT1023 tcmt1020 temic tcmt1024 temic
Text: TCMT1020 Series TELEFUNKEN Semiconductors SMD Optocoupler with Phototransistor Output Description The TCMT1020 Series consist of a gallium arsenid infrared emitting diode, optically coupled to a silicon NPN epitaxial planar transistor in a 8 lead SOIC package.
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TCMT1020
D-74025
smd optocoupler
TCMT1021
TCMT1024
TCMT1022
TCMT1023
tcmt1020 temic
tcmt1024 temic
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transistor BC 182l
Abstract: bc182l bc182* transistor transistor bc182l
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182L SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature
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BC182L
transistor BC 182l
bc182l
bc182* transistor
transistor bc182l
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MOC2051
Abstract: MOC205 MOC205-207 MOC206 MOC207 DIODE RL 207 optocoupler 207 F 207 diode 207 optocoupler
Text: MOC205-207 Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The MOC series consists of a gallium arsenid infraredemitting diode, optically coupled to a silicon NPN epitaxial planar transistor in an 8-lead SOIC package
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MOC205-207
MOC205
D-74025
21-Nov-96
MOC2051
MOC205
MOC205-207
MOC206
MOC207
DIODE RL 207
optocoupler 207
F 207 diode
207 optocoupler
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TCMT1023
Abstract: TCMT1024 TCMT1020 tcmt1024 temic TCMT1023-GS12 11755 12085 tcmt1022 TCMT1021
Text: TCMT1020 Series Surface Mount Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The TCMT1020 series consists of a gallium arsenid infrared-emitting diode, optically coupled to a silicon NPN epitaxial planar transistor in an 8-lead SOIC
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TCMT1020
D-74025
21-Nov-96
TCMT1023
TCMT1024
tcmt1024 temic
TCMT1023-GS12
11755
12085
tcmt1022
TCMT1021
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transistor 1094
Abstract: NPN SMALL SIGNAL TRANSISTOR 182LA TRANSISTOR BC 413 BC182LA bc182* transistor ic 4450
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LA SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)
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BC182LA
182LA
Pr10/1094
transistor 1094
NPN SMALL SIGNAL TRANSISTOR
182LA
TRANSISTOR BC 413
BC182LA
bc182* transistor
ic 4450
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182LB
Abstract: BC182LB TRANSISTOR BC 413 transistor 1094
Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC182LB SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 50 V Min hFE . . . . 80 (Min) @ VCE = 5.0 V, IC = 100 mA 1 2 3 B C E 2 3 0.135 - 0.145 (3.429 - 3.683) 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)
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BC182LB
182LB
182LB
BC182LB
TRANSISTOR BC 413
transistor 1094
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256K DPRAM
Abstract: CB45000 ST20 programmable schmitt trigger tristate nand gate
Text: CB45000 SERIES HCMOS6 STANDARD CELLS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability
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CB45000
256K DPRAM
ST20
programmable schmitt trigger
tristate nand gate
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tristate nand gate
Abstract: HCMOS6
Text: CB45000 SERIES HCMOS6 STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability
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CB45000
tristate nand gate
HCMOS6
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GENERAL DESCRIPTION PHX1N50E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high
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PHP1N50E
PHX1N50E
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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LD25V
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has
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BUK9510-30
T0220AB
LD25V
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective Specification PowerMOS transistor Isolated version fo PHP1N50E GEN ER AL DESCRIPTION PHX1N50E QUICK R EFEREN CE DATA N-channel enhancement mode field-effect power transistor in a fuf! pack, plastic envelope featuring high avalanche energy capability, stable
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PHP1N50E
PHX1N50E
PINNING-SOT186A
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BFR91 philips
Abstract: No abstract text available
Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The
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bbS3T31
BFR93
ON4186)
BFT93.
BFR91 philips
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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QS 100 NPN Transistor
Abstract: transistor BFR93 L7E transistor BFR93 BFR91 BFT93 BFR91 NPN 6 GHz Wideband Transistor
Text: • P hilips Sem iconductors •— bb S3 T3 1 D0 25 17 5 254 « A P X N AUER P H I L I P S / D I S C R E T E Product specification b7E NPN 5 GHz wideband transistor DESCRIPTION fc BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use
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bbS3T31
D025175
BFR93
ON4186)
BFT93.
QS 100 NPN Transistor
transistor BFR93
L7E transistor
BFR93
BFR91
BFT93
BFR91 NPN 6 GHz Wideband Transistor
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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BFN21
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistor BFN 21 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary type: BFN 20 NPN
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Q62702-F1059
OT-89
CHP00600
BFN21
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC Compound Field Effect Power Transistor _j PA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The ¿¡PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, m otor and lamp driver.
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PA1572B
PA1572B
uPA1572BH
10Pin
I-1202
IEI-1209
10535E
10943X
EI-1202
X10679E
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ld 1088 bs
Abstract: k 1094 transistor 1/ld 1088 bs
Text: SIEMENS BUZ 380 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 380 Vbs 1000 V 5.5 A ^bsfon 2w Package Ordering Code TO-218AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs V DGR Drain-gate voltage
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O-218AA
C67078-A3205-A2
ld 1088 bs
k 1094 transistor
1/ld 1088 bs
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germanium
Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014
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I815/KTN
10I5/KTP
1923/KTN
380TM/KTN
germanium
kia 7208
KIA 7313
germanium transistor
speaker protector
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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