transistor 2n3772
Abstract: 2N3772
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and
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2N3772
50kHz
transistor 2n3772
2N3772
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2N6438
Abstract: No abstract text available
Text: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.
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2N6438
2N6438
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722 smd transistor
Abstract: transistor smd marking 94 FMMT722 TRANSISTOR SMD 1a 9 transistor smd br
Text: Transistors IC SMD Type Switching Transistor FMMT722 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current. +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A.
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FMMT722
OT-23
625mW
-20mA
-100mA
-200mA
-10mA,
-50mA
100MHz
722 smd transistor
transistor smd marking 94
FMMT722
TRANSISTOR SMD 1a 9
transistor smd br
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12v class d amplifier 70W
Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V
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HIP2060
TS-001AA
HIP2060
100mJ
MO-169
1-800-4-HARRIS
12v class d amplifier 70W
HIP2060AS1
HIP4080A
HIP2060AS2
AN8610
1350P
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12v class d amplifier 70W
Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
Text: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V
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HIP2060
TS-001AA
HIP2060
100mJ
MO-169
1-800-4-HARRIS
12v class d amplifier 70W
HIP2060AS1
HIP2060AS2
HIP4080A
Transistor S1D
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BDV91
Abstract: transistor BDV95 BDV93 BDV95
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDV91/93/95 DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 45V(Min)- BDV91; 60V(Min)- BDV93 80V(Min)- BDV95 ·Complement to Type BDV92/94/96
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BDV91/93/95
BDV91;
BDV93
BDV95
BDV92/94/96
BDV91
BDV91
transistor BDV95
BDV93
BDV95
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BDV96
Abstract: BDV94 BDV91 BDV92
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION •Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95
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BDV92/94/96
BDV92;
BDV94
BDV96
BDV91/93/95
BDV92
BDV96
BDV94
BDV91
BDV92
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NPN Transistor TO92 300ma
Abstract: npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR
Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure
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TSC5988
300mA
TSC5988CT
NPN Transistor TO92 300ma
npn 120v 10a transistor
Silicon NPN Epitaxial Planar Type
TSC5988
NPN Silicon Epitaxial Planar Transistor to92
60V transistor npn 2a
POWER AND MEDIUM POWER TRANSISTOR
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transistor E11
Abstract: NPN Transistor TO92 300ma POWER AND MEDIUM POWER TRANSISTOR
Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure
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TSC5988
300mA
TSC5988CT
transistor E11
NPN Transistor TO92 300ma
POWER AND MEDIUM POWER TRANSISTOR
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lf817
Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V
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SLA8004
100max
60max
60min
150min
35max
55min
80min
lf817
pnp 8 transistor array
pnp array
SLA8004
1/stv 9902
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transistor BD245
Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C
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BD245/A/B/C
BD245;
BD245A
BD245B;
BD245C
BD246/A/B/C
BD245
BD245B
transistor BD245
BD245C
BD245
BD245A
BD245 transistor
BD245B
BD246 EQUIVALENT
NPN Transistor VCEO 80V 100V
NPN Transistor 10A 70V
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2SA1599
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -5A ·Large Current Capability-IC= -10A
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2SA1599
2SA1599
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Tenma
Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
Text: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals
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300mA
20K/volt
Tenma
pnp transistor 1000v
philips AA Alkaline battery dimensions
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transistor bdx66
Abstract: BDX66B TRANSISTOR BDX66 BDX66C BDX66B BDX66A BDX66 BDX66A BDX66C Transistor Audio Output Transistor Amplifier BDX67 data transistor darlington for High Power Audio
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000 Min @ IC= -10A ·Complement to Type BDX67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier
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BDX67/A/B/C
BDX66
BDX66B
BDX66A
BDX66C
transistor bdx66
BDX66B TRANSISTOR
BDX66
BDX66C
BDX66B BDX66A BDX66
BDX66A
BDX66C Transistor
Audio Output Transistor Amplifier
BDX67
data transistor darlington for High Power Audio
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Untitled
Abstract: No abstract text available
Text: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.55V @ IC / IB = 6A / 300mA (Max.) Excellent gain characteristics specified up to 10A
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TSC5988
300mA
TSC5988CT
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Untitled
Abstract: No abstract text available
Text: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max
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SLA8004
LF817)
100max
60max
60min
150min
35max
55min
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Untitled
Abstract: No abstract text available
Text: , Una. J C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY57 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=125V(Min.) • Low Collector Saturation Voltage:V CE (wt)=1.3V@lc=10A
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BUY57
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Untitled
Abstract: No abstract text available
Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA TELEPHONE: 973 376-2922 (212)227-6005 BUY73 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 200V(Min.) • Low Collector Saturation Voltage:V C E(.at)=1.4V@l c =10A
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BUY73
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Untitled
Abstract: No abstract text available
Text: zSzmi-Conauctoi \P\odu.ci^, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY58 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 160V(Min.) • Low Collector Saturation Voltage:V CE (.at)=1.3V@l c =10A
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BUY58
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NTE72
Abstract: No abstract text available
Text: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required
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NTE72
30MHz
20MHz
NTE72
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Untitled
Abstract: No abstract text available
Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A
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2SC4065
100max
60max
60min
50min
35max
24typ
180typ
2SA1568)
O220F)
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2SA1568
Abstract: 2SC4065 FM20
Text: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 IEBO V V(BR)CEO ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A
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2SC4065
2SA1568)
60max
60min
50min
35max
24typ
180typ
100max
2SA1568
2SC4065
FM20
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25E03
Abstract: No abstract text available
Text: HIP2060 fü HARRIS S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001A A ALTERNATE VERSIO N HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(QN) Max Per Transistor at VGS = 15V
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HIP2060
TS-001A
HIP2060
100mJ
1-800-4-HARRIS
25E03
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Untitled
Abstract: No abstract text available
Text: . 1/ ' " H IP 5060 HARRIS S E M I C O N D U C T O R 1 Features Description Single Chip Current Mode Control 1C • 60V, 10A On-chip D M O S Transistor • Thermal Protection • Over-Voltage Protection • Over-Current Protection • 1MHz Operation or External Clock
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My1992
HIP5060
1-800-4-HARRIS
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