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    TRANSISTOR 1102 Search Results

    TRANSISTOR 1102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J2735

    Abstract: DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


    Original     		PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H J2735 DVB-t2 ATC800B JESD625-A 61 TRANSISTOR DVBT2 transistor smd 723 GP414

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15L-500H; BLF6G15LS-500H Power LDMOS transistor Rev. 2 — 16 September 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W


    Original     		PDF BLF6G15L-500H; BLF6G15LS-500H BLF6G15L-500H 6G15LS-500H

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    j597

    Abstract: TRANSISTOR j589
    Text: BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 2 — 28 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P j597 TRANSISTOR j589

    K1150PG

    Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
    Text: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%


    Original     		PDF 4N27/28 4N25/26 TCDT1110 4N32/33 CNY74 MCT6H/62H K827PH K825P K824P K845P K1150PG K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P

    j353 transistor

    Abstract: BLF7G20LS-250P transistor j353 800B JESD625-A RF35
    Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-250P; BLF7G20LS-250P BLF7G20L-250P 7G20LS-250P j353 transistor BLF7G20LS-250P transistor j353 800B JESD625-A RF35

    1241 transistor

    Abstract: No abstract text available
    Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 1 — 18 July 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.


    Original     		PDF BLF2425M7L250P; BLF2425M7LS250P BLF2425M7L250P 2425M7LS250P 1241 transistor

    JESD625-A

    Abstract: BLS7G2729L-350P radar IF UNIT
    Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1.


    Original     		PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P JESD625-A radar IF UNIT

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor K 1096

    Abstract: BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN
    Text: PHILIPS INTERNATIONAL bSE D • 711DÛ2L OObBS'H =134 ■ PHIN 11 BLY89C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 13,5 V . The transistor is resistance stabilized


    OCR Scan     		PDF 711002b BLY89C transistor K 1096 BLY89C IEC134 BLY-89c 3 w RF POWER TRANSISTOR NPN

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMQS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PDF PHP4N40E PHX2N40E OT186A

    transistor rf cm 1104

    Abstract: BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971
    Text: 11 PHILIPS INTERNATIONAL MAINTENANCE TYPE 711DÛ2b DQS7TÌ3 3 E IPHIN 41E D BLY92A T -3 3 -0 9 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage o f 28 V. The transistor Is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Of transistor rf cm 1104 BLY92A transistor 1971 3309 power transistor transistor VHF 1104 PHILIPS FW 36 20 431202036640 choke T3309 bly92 transistor c 1971

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP4N40E GENERAL DESCRIPTION PHX2N40E QUICK REFERENCE DATA N-channel enhancement mode SYMBOL field-effect power transistor in a full pack, plastic envelope featuring high


    OCR Scan     		PDF PHP4N40E PHX2N40E

    Untitled

    Abstract: No abstract text available
    Text: P * FORWARD INTERNATIONAL ELECTRONICS LTD. BC857S SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR •Complement to DC847S ABSOLUTE MAXIMUM RATINGS at Tan*=25°C Characteristic Symbol Rating Unit Collector-Base Voltage


    OCR Scan     		PDF BC857S DC847S -10uA -10uA -100mA -10mA -200uA 200Hz

    Untitled

    Abstract: No abstract text available
    Text: BC107 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. " " TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a t TanJj=25°C C haracteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC107 100MHz 200uA 200Hz

    marking B3A sot23-5

    Abstract: No abstract text available
    Text: BC856S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR Package: SOT-23 ♦Com plem ent to BC846S ABSOLUTE MAXIMUM RATINGS a t Tflmb=1is r c _ C haracteristic Symbol Rating


    OCR Scan     		PDF BC856S OT-23 BC846S -10mA -10uA -100mA marking B3A sot23-5

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    TM1102

    Abstract: S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF
    Text: Philips Semiconductors Product specification PNP transistor/Schottky-diode module PZTM1102 FEATURES DESCRIPTION • Low output capacitance Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. • Fast switching time


    OCR Scan     		PDF PZTM1102 OT223 PZTM1101. 711QfiSb G1G3173 OT223. 7110fiEb TM1102 S1U MARKING TF 745-A SOT223 MARKING L5 l5 transistor PNP transistor PNP L5 PZTM1101 PZTM1102 lf marking transistor transistor marking LF

    Untitled

    Abstract: No abstract text available
    Text: tgr P BC846S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L m TECHNICAL DATA NPN EPITAXIAL SEICON TRANSISTOR GENERAL PURPOSE TRANSISTOR *Co llll lenient to BC856S ABSOLUTE MAXIMUM RATINGS at I an*=25°C Symbol Rating Characteristic Collector-Base Voltage


    OCR Scan     		PDF BC846S BC856S 10mAIb 100mA 200uA 200Hz 062ii 300uS

    TM 69

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope using ’trench' technology. The device features very low on-state resistance and has


    OCR Scan     		PDF BUK9514-30 T0220AB TM 69

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    transistor rf cm 1104

    Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
    Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF BLY92A T-33-Ã OT-48/2. transistor rf cm 1104 BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor

    Untitled

    Abstract: No abstract text available
    Text: P e BC857 SEMICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD, PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR Package: TO-92 ABSOLUTE MAXIMUM RATINGS a tT a iriM !5°C Symbol Rating Characteristic Unit Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC857 300uS -10mA -100mA 100MHz -200uA 200Hz

    Untitled

    Abstract: No abstract text available
    Text: p BC846 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tamb=25°C C haracteristic Symbol R ating Vcbo 80 Collector-Base Voltage Unit V Collector-Emitter Voltage


    OCR Scan     		PDF BC846 S300uS 100mA 10inA 200uA 200Hz