rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
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BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
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GT30F121
Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications
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BCE0010A
GT30F121
GT30G121
GT30G131
MG30T1AL1
GT30*122
GT45F12
MG60M1AL1
gt30f
GT60M301
GT60M101
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K1150PG
Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Text: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%
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4N27/28
4N25/26
TCDT1110
4N32/33
CNY74
MCT6H/62H
K827PH
K825P
K824P
K845P
K1150PG
K1150Pg Opto Coupler
opto coupler 4n35 datasheet
Opto Coupler 4N33
darlington opto coupler
opto coupler 4n35
purpose of opto coupler 4n35
4 channel triac opto
x1 transistor
K1150P
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
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BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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Untitled
Abstract: No abstract text available
Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
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HM621400HC
ADE-203-1199B
400-mil
32-pin
HM621400HCJP-10
HM621400HCLJP-10
HM621400CJP10
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
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HM621400HC
ADE-203-1199
400-mil
32-pin
HM621400HCJP-10
HM621400HCLJP-10
Hitachi DSAUTAZ006
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HM621400HC
Abstract: HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316
Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
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HM621400HC
ADE-203-1199B
400-mil
32-pin
D-85622
D-85619
HM621400HCJP-10
HM621400HCLJP-10
transistor marking CS
Hitachi DSA00316
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transistor model list
Abstract: H7CX-A11S-N preset contact counter H7CX-R11D1-N H7CX-AU-N omron counter M079-E1 Y92S-29 Digital Pulse Counter - Two Digit Omron h7cx-awd1-n
Text: Ordering Information List of Models Type Classification External connections Configuration Display digits Settings Power supply voltage Output Contact output SPDT 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket Contact output (SPDT)
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11-pin
6835-3011/Fax:
21-5037-2222/Fax:
M081-E1-01
transistor model list
H7CX-A11S-N
preset contact counter
H7CX-R11D1-N
H7CX-AU-N
omron counter
M079-E1
Y92S-29
Digital Pulse Counter - Two Digit
Omron h7cx-awd1-n
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HM621400HC
Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
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HM621400HC
ADE-203-1199
400-mil
32-pin
HM621400HCJP-10
HM621400HCLJP-10
Hitachi DSA00358
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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MPS-3638A
Abstract: mps3638a
Text: ON Semiconductort MPS3638A Switching Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit VCEO −25 Vdc Collector −Emitter Voltage VCES −25 Vdc Collector −Base Voltage VCBO −25 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous
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MPS3638A
O-226AA)
MPS-3638A
mps3638a
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology
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BUK9624-55
OT404
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bbS3131 003314*1 3*1*1 M A P X Product specilication NPN 2 GHz wideband transistor 1 N Ar1ER PHILIPS/DISCRETE ^ DESCRIPTION BFW93 blE ]> PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended tor use in VHF and UHF applications, primarily
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bbS3131
BFW93
BFW93/02
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BFW93
Abstract: No abstract text available
Text: • btS3^31 003514^ 3 ^ Product specification IAPX NPN 2 GHz wideband transistor ^ BFW93 N AMER PHILIPS/DISCRETE DESCRIPTION blE B PINNING NPN transistor in a plastic SOT37 envelope. PIN It is intended for use in VH F and UHF applications, primarily wideband aerial amplifiers in the 40
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BFW93
BFW93/02
0G32154
BFW93
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BFW93
Abstract: 2F TRANSISTOR transistor 1199
Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor £ BFW93 PHILIPS I N T E R N A T I O N A L DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is intended for use in VHF and UHF applications, primarily wideband aerial amplifiers in the 40
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BFW93
711005b
00HbD3^
BFW93/02
MBB916
BFW93
2F TRANSISTOR
transistor 1199
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transistor 3095
Abstract: 73TA
Text: TK732XX Power Conversion ICs LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External ■ Battery Powered Systems PNP Transistor ■ Cellular/Cordless Telephones ■ Internal Short Circuit Protection ■ Radio Control Systems
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TK732XX
TK732xx
TK732xxMCLH)
transistor 3095
73TA
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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optocoupler 207
Abstract: No abstract text available
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package.
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MCT62H
MCT62H
11-Ja
optocoupler 207
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