TRANSISTOR 1204 Search Results

TRANSISTOR 1204 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 1204 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology	OCR Scan	BUK9624-55 OT404	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
transistor 832 Abstract: No abstract text available Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15LS-250PBRN transistor 832	PDF
Untitled Abstract: No abstract text available Text: BLF8G19LS-170BV Power LDMOS transistor Rev. 2 — 28 March 2013 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.	Original	BLF8G19LS-170BV	PDF
BLF8G27LS-140V Abstract: SOT1120B Text: BLF8G27LS-140V Power LDMOS transistor Rev. 2 — 27 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.	Original	BLF8G27LS-140V Excelle10 BLF8G27LS-140V SOT1120B	PDF
1206 PHILIPS Abstract: transistor 86 Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.	Original	BLF8G22LS-160BV excell11 1206 PHILIPS transistor 86	PDF
transistor 832 Abstract: 831 transistor Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 1 — 11 June 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15LS-250PBRN transistor 832 831 transistor	PDF
MAM287 Abstract: BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 marking Code philips Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Nov 25 Philips Semiconductors Product specification NPN medium power transistor; 20 V, 1 A BCP68	Original	M3D087 BCP68 SCA75 R75/04/pp12 MAM287 BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 marking Code philips	PDF
Bv 42 transistor Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 2 — 12 October 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-200V Bv 42 transistor	PDF
Untitled Abstract: No abstract text available Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15LS-250PBRN	PDF
Untitled Abstract: No abstract text available Text: BLF8G20LS-200V Power LDMOS transistor Rev. 3 — 21 January 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.	Original	BLF8G20LS-200V	PDF
BCP68 Abstract: BCP69 BCP69-16 BCP69-25 SC-73 Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69	Original	M3D087 BCP69 SCA75 R75/05/pp14 BCP68 BCP69 BCP69-16 BCP69-25 SC-73	PDF

BFY90 PHILIPS Abstract: BFY90 Text: Philips Semiconductors Product specification bbSBIBl D0321S5 b^2 BIAPX NPN 1 GHz wideband transistor BFY90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E J> PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the	OCR Scan	D0321S5 BFY90 bb53T31 MBA397 MEA363 BFY90 PHILIPS BFY90	PDF
BLF8G27LS-140V Abstract: No abstract text available Text: BLF8G27LS-140V Power LDMOS transistor Rev. 1 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1.	Original	BLF8G27LS-140V BLF8G27LS-140V	PDF
BC368 Abstract: BC868 BCP68 BCP68-25 BCP69 SC-73 POWER AND MEDIUM POWER TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 1999 Apr 08 2003 Nov 25 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 FEATURES	Original	M3D087 BCP68 R75/04/pp12 BC368 BC868 BCP68 BCP68-25 BCP69 SC-73 POWER AND MEDIUM POWER TRANSISTOR	PDF
BLP7G07S-140P Abstract: transistor B 764 Text: BLP7G07S-140P Power LDMOS transistor Rev. 1 — 21 June 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Test signal	Original	BLP7G07S-140P BLP7G07S-140P transistor B 764	PDF
BFY90 PHILIPS Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire Text: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the	OCR Scan	BFY90 711002b 004bD4^ MBA383 BFY90 PHILIPS BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire	PDF
Untitled Abstract: No abstract text available Text: CHK025A-SOA 25W Power Packaged Transistor GaN HEMT on SiC Description The CHK025A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and	Original	CHK025A-SOA CHK025A-SOA 200mA, DSCHK025ASOA3021	PDF
Untitled Abstract: No abstract text available Text: CHK015A-SMA 15W Power Packaged Transistor GaN HEMT on SiC Description The CHK015A-SMA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and	Original	CHK015A-SMA CHK015A-SMA 100mA, DSCHK015ASMA3021	PDF
Untitled Abstract: No abstract text available Text: CHK080A-SRA 80W Power Packaged Transistor GaN HEMT on SiC Description The CHK080A-SRA is an unmatched Packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and	Original	CHK080A-SRA CHK080A-SRA 600mA, DSCHK080A-SRA3148	PDF
Untitled Abstract: No abstract text available Text: CHK040A-SOA 40W Power Packaged Transistor GaN HEMT on SiC Description The CHK040A-SOA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multipurpose applications such as radar and	Original	CHK040A-SOA CHK040A-SOA 300mA, DSCHK040ASOA3021	PDF
vk200 philips Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90 Text: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the	OCR Scan	D0321S5 BFY90 andS15q UEA397 vk200 philips BFY90 PHILIPS BFY90 VK200 Philips BFy90	PDF

TRANSISTOR 1204 Search Results

TRANSISTOR 1204 Result Highlights (5)

TRANSISTOR 1204 Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

Untitled

2N2222A 338

sx3704

transistor 832

Untitled

BLF8G27LS-140V

1206 PHILIPS

transistor 832

MAM287

Bv 42 transistor

Untitled

Untitled

BCP68

BFY90 PHILIPS

BLF8G27LS-140V

BC368

BLP7G07S-140P

BFY90 PHILIPS

Untitled

Untitled

Untitled

Untitled

vk200 philips