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    TRANSISTOR 1243 Search Results

    TRANSISTOR 1243 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1243 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBT2222A

    Abstract: PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA


    Original     		PDF MMBT2222A PMBT2907A. MAM255 SCA76 R75/02/pp7 MMBT2222A PMBT2907A

    7E SOT23 NXP

    Abstract: 771-MMBTA92215 MAM256
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF MMBTA92 MMBTA42. MMBTA92 SCA76 R75/02/pp6 771-MMBTA92215 7E SOT23 NXP MAM256

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA


    Original     		PDF MMBTA92 MMBTA42. MAM256 SCA76 R75/02/pp6

    transistor marking zg

    Abstract: PBSS4320T PBSS5320T
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product specification Supersedes data of 2002 Aug 08 2004 Mar 18 Philips Semiconductors Product specification 20 V NPN low VCEsat transistor PBSS4320T QUICK REFERENCE DATA FEATURES


    Original     		PDF PBSS4320T SCA76 R75/02/pp10 transistor marking zg PBSS4320T PBSS5320T

    PBSS5140T

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PBSS5140T 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jul 20 2004 Jan 07 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140T QUICK REFERENCE DATA FEATURES


    Original     		PDF PBSS5140T SCA76 R75/03/pp9 PBSS5140T

    MMBTA42

    Abstract: MMBTA92 transistor marking code 7e IBM type 1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBTA92 PNP high-voltage transistor Product specification Supersedes data of 2000 Apr 11 2004 Jan 16 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF MMBTA92 MMBTA42. MAM256 SCA76 R75/02/pp6 MMBTA42 MMBTA92 transistor marking code 7e IBM type 1

    MMBT2222A

    Abstract: PMBT2907A transistor mmbt2222a
    Text: DISCRETE SEMICONDUCTORS DATA SHEET MMBT2222A NPN switching transistor Product data sheet Supersedes data of 2000 Apr 11 2004 Jan 16 NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN


    Original     		PDF MMBT2222A PMBT2907A. MAM255 R75/02/pp7 MMBT2222A PMBT2907A transistor mmbt2222a

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    OCR Scan     		PDF SQD400AA100 SQD400AA10 -400A

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated


    OCR Scan     		PDF SQQ300BA60 200ns) hrEfe750

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF OD300A40/6Q E76102 SQD300A 400/600V --A40 0Q02B06

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF SQP200A40/60 E76102 400/600V CI022aS SQD200A

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for


    OCR Scan     		PDF SQP400AA120 a400A 00020m SQD400AA120

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan     		PDF SQD300AA120 DDD2213

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD400BA60 UL;E76102 M S Q D 4 0 0 B A 6 0 is a Darlington power transistor module with a U LTR A HIGH h F E , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 2 0 0 n s ). The mounting base of the module is electrically isolated


    OCR Scan     		PDF SQD400BA60 E76102 7TU243

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­


    OCR Scan     		PDF QCA200A40/60 400/600V QCA200A

    BUX37

    Abstract: transistor da 307 dg173 TO-204AA transistor
    Text: G E SOLI» STATE DI 3875081 G E “SOLID STATE _ File N um b er ' ’ D eT| 3û750fll 00173DS 4 '01E 17305 D T * 3 ^"2.^ Darlington Power Transistor# 1243 BUX37 15-Ampere N-P-N Monolithic Darlington Power Transistor « TERMINAL DESIGNATIONS 400 V , 35 W


    OCR Scan     		PDF DG173DS BUX37 15-Ampere O-204AA RCA-BUX37 O-204AA 50fll DD17307 BUX37 transistor da 307 dg173 TO-204AA transistor

    d 2539 transistor

    Abstract: QCA50AA120
    Text: TRANSISTOR MODULE QCA50ÄA120 UL;E76102 M Q C A 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. T he mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA5QAA120 QCA50AA1 E76102 d 2539 transistor QCA50AA120

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200AA100 UL;E76102 M Q C A 2 0 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA200AA100 E76102 QDQ2Q12

    sqd35J

    Abstract: No abstract text available
    Text: TRANSISTOR M O D U LE < non -IS O L A T E D TYPE SQD35JA140/160 S Q D 3 5 J A is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • Vcbo= 1600V MAX, lc = 35A For AC200V Line)


    OCR Scan     		PDF SQD35JA140/160 AC200V SQD35JA140 SQD35JA160 SQD35JA sqd35J

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES QCA75BA60 UL;E76102 M) Q C A 7 5 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE. high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the module


    OCR Scan     		PDF QCA75BA60 E76102 Rati300V 150mA DDDS17R

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE Q C A 150A A 120 U L;E 76102 M QCA1 5 0 A A 1 2 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF

    QF20AA60

    Abstract: QF20AA40 SANREX QF20AA60
    Text: TRANSISTOR M O D U L E t h r e e p h a s e s b r id g e t y p e QF20AA40/60 Q F 2 0 A A is a six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The


    OCR Scan     		PDF QF20AA40/60 QF20AA 400/600V 7niS43 QF20AA60 QF20AA40 SANREX QF20AA60

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931