TRANSISTOR 125W Search Results

TRANSISTOR 125W Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 125W Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MAGX-000912-125L00 Abstract: transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000 Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-000912-125L00 MAGX-000912-125L00 transistor 1.25W MAGX000912125L00 sic wafer 100 mm MAGX-000	PDF
Untitled Abstract: No abstract text available Text: MAGX-000912-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-000912-125L00 MAGX-000912-125L00	PDF
L-Band 1200-1400 MHz Abstract: No abstract text available Text: MAGX-001214-125L00 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty Production V1 18 Aug 11 Features •       GaN depletion mode HEMT microwave transistor Internally matched Common source configuration	Original	MAGX-001214-125L00 MAGX-001214-125L00 L-Band 1200-1400 MHz	PDF
NPN Transistor VCEO 1000V Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A Text: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:	Original	NTE2310 NTE2310 100mA, NPN Transistor VCEO 1000V 1000v, NPN transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A	PDF
NTE2317 Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter	Original	NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor	PDF
Untitled Abstract: No abstract text available Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter	Original	NTE2317 NTE2317	PDF
Transistor B C 458 Abstract: c 458 c transistor transistor c 458 NPN transistor Electronic ballast to92 transistor 458 FJN3303 458 transistor Text: FJN3303 NPN Silicon Transistor Planar Silicon Transistor High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted	Original	FJN3303 Transistor B C 458 c 458 c transistor transistor c 458 NPN transistor Electronic ballast to92 transistor 458 FJN3303 458 transistor	PDF
NTE162 Abstract: NPN Transistor 10A 400V Text: NTE162 Silicon NPN Transistor TV Vertical Deflection Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCEX = 400V D Gain Specified to 3.5A	Original	NTE162 NTE162 200mA, NPN Transistor 10A 400V	PDF
NPN Transistor 1.5A 700V Abstract: No abstract text available Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection	Original	NTE2318 NTE2318 NPN Transistor 1.5A 700V	PDF
2N3055 TO220 Abstract: NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor Text: TRANSISTOR SPECIFICATIONS - A TYPICAL TABLE FROM A CATALOGUE Transistor Polarity Number BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 Case IC max VCE hFE Power NPN NPN NPN NPN NPN NPN NPN NPN Style TO18 TO18 TO92 E-line TO39 TO39 TO220 TO3 mA 100	Original	BC107 BC108 2N3904 ZTX300 2N3053 BFY51 TIP31A 2N3055 BC178 BC559 2N3055 TO220 NPN Transistor 2N3055 darlington 100 amp npn darlington power transistors transistor BC107 specifications tip122 tip127 audio amp NPN Transistor TO92 10 amp npn darlington power transistors transistor 2n3053 DATASHEET Transistor BC107 2N3055 NPN Transistor	PDF
NTE52 Abstract: No abstract text available Text: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for	Original	NTE52 NTE52 100ns 150ns 400ns	PDF
BU908 Abstract: NPN Transistor 1.5A 700V NPN Transistor 1500V 700 v power transistor Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU908 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Power Dissipation: PD= 125W@TC= 25℃ APPLICATIONS ·Designed for use in color TV horizontal deflection circuits.	Original	BU908 100mA; BU908 NPN Transistor 1.5A 700V NPN Transistor 1500V 700 v power transistor	PDF
NPT25100 Abstract: NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR Text: NPT25100 Datasheet Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power	Original	NPT25100 2700MHz 10MHz EAR99 NDS-001 NPT25100B Gan on silicon substrate Gan on silicon transistor NPT25015 ECJ5YB2A105M atc600f ATC100B1R2BT AC780BM-F2 GaN TRANSISTOR	PDF
PIMD3 Abstract: No abstract text available Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power	Original	NPT25100 2700MHz 10MHz 3A982 NDS-001 PIMD3	PDF

NPT25100 Abstract: PIMD3 Text: NPT25100 Gallium Nitride 28V, 125W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE and other applications from 2100 – 2700MHz • 125W P3dB Peak envelope power	Original	NPT25100 2700MHz 10MHz 3A982 NDS-001 NPT25100 PIMD3	PDF
TIP35C EQUIVALENT Abstract: TIP35C transistor TIP35A data sheet transistor tip35c TIP35B TIP35C transistor TIP35C Text: SILICON HIGH- POWER TRANSISTOR NPN TIP35A/B/C 25A 125W Technical Data …designed for use in general-purpose switching and power amplifier applications. F DC Current Gain - h FE = 15 Min @ IC = 15 Adc F 25 A Collecter Current F TO-218 Package MAXIMUM RATINGS	Original	TIP35A/B/C O-218 TIP35A TIP35B TIP35C 15Adc 25Adc 10Vdc TIP35C EQUIVALENT TIP35C transistor TIP35A data sheet transistor tip35c TIP35B TIP35C transistor TIP35C	PDF
TIP36C Abstract: TIP36A TIP36C EQUIVALENT TIP36B Text: SILICON HIGH- POWER TRANSISTOR PNP TIP36A/B/C 25A 125W Technical Data …designed for use in general-purpose switching and power amplifier applications. F DC Current Gain - h FE = 15 Min @ IC = 15 Adc F 25 A Collecter Current F TO-218 Package MAXIMUM RATINGS	Original	TIP36A/B/C O-218 TIP36A TIP36B TIP36C 15Adc 25Adc 10Vdc TIP36C TIP36A TIP36C EQUIVALENT TIP36B	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
BAL0204-125 Abstract: No abstract text available Text: GAE GREAT AMERICAN ELECTROINCS BAL0204-125 Silicon NPN high power VHF transistor BAL0204-125 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communications equipment (220-400 Mhz frequency band) for radio links	OCR Scan	BAL0204-125 OT-161 BAL0204-125	PDF
acrian RF POWER TRANSISTOR Abstract: PU 391 acrian inc Text: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold	OCR Scan	U14Q9 400mA, D0D1411 10nfd@ acrian RF POWER TRANSISTOR PU 391 acrian inc	PDF
BUZ326 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE PowerMOS transistor OL.E D • ^53=131 O D l l47Sci T ■ BÜZ326 r - "’ 3 ^ -/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUZ326 T0218AA; DD147hS 13UZ326 T-39-13 BUZ326	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20190 175 Watts, 470 - 800 MHz Power Transistor Preliminary Key Features Description The 20190 is a class AB, NPN, common emitter RF Power Transistor intended for 28 VDC operation across the 470-800 MHz UHF TV fre quency band. It is rated at 175 Watts output power. It is intended to	OCR Scan	100mA /-920kHz	PDF

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TRANSISTOR 125W Search Results

TRANSISTOR 125W Result Highlights (5)

TRANSISTOR 125W Datasheets Context Search

MAGX-000912-125L00

Untitled

L-Band 1200-1400 MHz

NPN Transistor VCEO 1000V

NTE2317

Untitled

Transistor B C 458

NTE162

NPN Transistor 1.5A 700V

2N3055 TO220

NTE52

BU908

NPT25100

PIMD3

NPT25100

TIP35C EQUIVALENT

TIP36C

2sb504

2N2222A 338

y51 h 120c

BAL0204-125

acrian RF POWER TRANSISTOR

BUZ326

Untitled