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    TRANSISTOR 13000 Search Results

    TRANSISTOR 13000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 13000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPP020N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPP020N08N5 1Description TO-220-3 tab Features


    Original     		IPP020N08N5 O-220-3 IEC61249-2-21 PDF

    low noise hemt

    Abstract: low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
    Text: EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS PDF

    low noise x band hemt transistor

    Abstract: Low Noise HEMT TC2623 transistor BP 109 BMH204 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor
    Text: TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with


    Original     		TC2623 12GHz TC2623 70mils BMH204 12GHz DSTC26237003 low noise x band hemt transistor Low Noise HEMT transistor BP 109 DSTC26237003 Super low noise figure and high associated gain LOW HEMT Hemt transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V IPB017N08N5 DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSª5Power-Transistor,80V IPB017N08N5 1Description D²PAK Features •Idealforhighfrequencyswitchingandsync.rec.


    Original     		IPB017N08N5 IEC61249-2-21 PDF

    capacitor tnr 471

    Abstract: 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


    OCR Scan     		610mm capacitor tnr 471 15g390k TNR 471 15g821k SIEMENS LIGHTNING ARRESTORS 15G470K 15g470km ERZC14DK391 ERZ-C14DK390 TNR-15G470KM PDF

    14DK471

    Abstract: 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection, lurge protection in consumer electronics, lurge protection in industrial electronics. Jurge protection in communication, measuring and


    OCR Scan     		Vcat20Â 14DK471 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471 PDF

    ERZC14DK911

    Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


    OCR Scan     		18vto zAC14DK911 tVSAC20DK911 ERZ-C10DK911 ERZ-C14DK911 ERZ-C20DK911 AC10DK102 tVSAC14DK102 fVSAC20DK102 ERZ-C10DK102 ERZC14DK911 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K PDF

    13000 transistor TO-220

    Abstract: 100N04 np100n04mdh NP100N04PDH MP-25ZP NP100N04NDH S100BR
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100N04MDH, NP100N04NDH, NP100N04PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP100N04MDH, NP100N04NDH, NP100N04PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		NP100N04MDH, NP100N04NDH, NP100N04PDH NP100N04PDH NP100N04MDH-S18-AY NP100N04NDH-S18-AY NP100N04PDH-E1-AY NP100N04PDH-E2-AY 13000 transistor TO-220 100N04 np100n04mdh MP-25ZP NP100N04NDH S100BR PDF

    11N60C3

    Abstract: 11N60C SPP11N60C3 transistor 11n60c3 AR1010
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 11N60C3 11N60C transistor 11n60c3 AR1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C C VCES = 600V IC(Nominal) = 75A


    Original     		AUIRGP4066D1 AUIRGP4066D1-E PDF

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Text: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    transistor d 2389

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE24283B NE24283B transistor d 2389 PDF

    sanyo eg 8500

    Abstract: transistor 9747 MCH4009
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		MCH4009 ENA0389 25GHz A0389-13/13 sanyo eg 8500 transistor 9747 MCH4009 PDF

    sanyo eg 8500

    Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		MCH4009 ENA0389 25GHz S21e2 A0389-13/13 sanyo eg 8500 sanyo 14500 82306 MCH4009 MJE 13500 marking GG PDF

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE4210S01 NE4210S01 NE4210S01-T1 NE4210onditions. IR30-00-1 14232E 0DS00 PDF

    NE334501

    Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE334S01 NE334S01 NE334501 transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor low noise FET NEC U PDF

    TRANSISTOR K 2191

    Abstract: nec 2761
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm


    OCR Scan     		NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B IR30-00 TRANSISTOR K 2191 nec 2761 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses


    Original     		AUIRGP4066D1 AUIRGP4066D1-E PDF

    ym 26500

    Abstract: No abstract text available
    Text: K-BAND BIPOLAR OSCILLATOR TRANSISTOR OUTLINE DIMENSIONS Units in nm FEATURES_ • FUNDAMENTAL OSCILLATION GREATER NE64800 (CHIP) THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER MIL-SPEC TEMP RANGES ÜH Bonding Area ELECTRICAL CHARACTERISTICS (t a - 2 5 - c >


    OCR Scan     		NE64800 NE64800 S22-S21 ym 26500 PDF

    NE334S01

    Abstract: transistor C 2240 K 1358 fet transistor
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE334S01 NE334S01 NE334S01-T1 NE334S01-T1B IR30-00 transistor C 2240 K 1358 fet transistor PDF

    auirgp4066d1

    Abstract: AUIRGP4066 AUP4066D1 auirgp4066d1-e
    Text: PD - 96410 AUIRGP4066D1 AUIRGP4066D1-E AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • • • VCES = 600V Low VCE ON Trench IGBT Technology IC(Nominal) = 75A Low switching losses


    Original     		AUIRGP4066D1 AUIRGP4066D1-E AUIRGP4066 AUP4066D1 auirgp4066d1-e PDF