486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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SEMICOA 2N2946A
Abstract: No abstract text available
Text: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications SEMICOA Corporaton offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)
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2N2946A
MIL-PRF-19500
2N2946AJ)
2N2946AJX)
2N2946AJV)
2N2946AJS)
MIL-STD-750
MIL-PRF-19500/382
SEMICOA 2N2946A
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2N2946A JANTX
Abstract: 2N2946
Text: 2N2946A Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2946AJ • JANTX level (2N2946AJX)
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2N2946A
MIL-PRF-19500
2N2946AJ)
2N2946AJX)
2N2946AJV)
2N2946AJS)
MIL-STD-750
MIL-PRF-19500/382
2N2946A JANTX
2N2946
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Amplifier Transistor MPSL51 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −100 Vdc Collector −Base Voltage VCBO −100 Vdc Emitter −Base Voltage VEBO −4.0 Vdc Collector Current — Continuous
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MPSL51
O-226AA)
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PHX27NQ11T
Abstract: No abstract text available
Text: PHX27NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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PHX27NQ11T
OT186A
O-220F)
PHX27NQ11T
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PHX34NQ11T
Abstract: No abstract text available
Text: PHX34NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 13 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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PHX34NQ11T
OT186A
O-220F)
PHX34NQ11T
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PHX23NQ11T
Abstract: TO-220F JEDEC
Text: PHX23NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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PHX23NQ11T
OT186A
O-220F)
PHX23NQ11T
TO-220F JEDEC
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PHB110NQ06LT
Abstract: PHP110NQ06LT
Text: PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PHP/PHB110NQ06LT
O-220AB)
OT404
PHB110NQ06LT
PHP110NQ06LT
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PHB119NQ06T
Abstract: PHP119NQ06T
Text: PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold
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PHP/PHB119NQ06T
O-220AB)
OT404
PHB119NQ06T
PHP119NQ06T
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PHB145NQ06T
Abstract: No abstract text available
Text: PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 — 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Standard level threshold
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PHB145NQ06T
OT404
PHB145NQ06T
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PHB146NQ06LT
Abstract: No abstract text available
Text: PHB146NQ06LT N-channel TrenchMOS logic level FET Rev. 01 — 10 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold
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PHB146NQ06LT
OT404
PHB146NQ06LT
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and hign
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PHD5N20E
OT428
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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BFT46
Abstract: No abstract text available
Text: • L.bSB'm DD253fll 31T H A P X N AUER PHILIPS/DISCRETE b7E » BFT46 y v N-CHANNEL SILICON FET Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film
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DD253fll
BFT46
0D253fib
00ES367
BFT46
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lm394
Abstract: LM194 NPN Monolithic Transistor Pair accurate logging amplifier LM394CH
Text: LM194/LM394 EHNational ^•Sem iconductor LM194/LM394 Supermatch Pair General Description The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional tran
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LM194/LM394
LM194/LM394
LM194
LM394
TL/H/9241-10
TL/H/9241-11
TL/H/9241-12
LM194H,
LM194H/883*
LM394H,
LM194 NPN Monolithic Transistor Pair
accurate logging amplifier
LM394CH
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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E 94733
Abstract: p1S SOT-89 BFr pnp transistor SPICE 2G6
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1488
OT-323
900MHz
E 94733
p1S SOT-89
BFr pnp transistor
SPICE 2G6
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IR LFN
Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International
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MIL-S-19500/59S]
IRFM2500
IRFM250U
O-254
mil-s-195m
IR LFN
LFN ir
D0113
CJ10L
2N7225
IRFM250
2N7225 JANTX
024-S
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SN7S85
Abstract: No abstract text available
Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS50 SN7S85 JANTX2N7225 "* ~ ~ JAIMTXV2N7225 N-CHANNEL [R E F : M IL -8 -1 9 5 0 0 / 5 9 S ] Product Summary 200 Volt, 0.100 Ohm HEXFET
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IRFMS50
SN7S85
JANTX2N7225
JAIMTXV2N7225
IRFM25QD
IRFM250U
O-254
MIL-S-19500
I-324
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C3781
Abstract: 2N7225 IRFM250 2N7225 JANTX transistor 1317 i324
Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR t N-CHANNEL IRFMS50 SN7SS5 JANTX2N7S25 JAIMTXV2N7225 REF: MIL-S-19500/5 9 5 ] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM250
MIL-S-19500/595]
irfm250d
irfm250u
O-254
Mll-S-19500
I-324
C3781
2N7225
IRFM250
2N7225 JANTX
transistor 1317
i324
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