1P marking
Abstract: No abstract text available
Text: MMBT2222A VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.
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MMBT2222A
MPS2222A.
OT-23
MMBT2222A
MMBT2222A-GS18
MMBT2222A-GS08
D-74025
31-Aug-04
1P marking
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Untitled
Abstract: No abstract text available
Text: MMBT2222A VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.
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MMBT2222A
MPS2222A.
OT-23
MMBT2222A
MMBT2222A-GS18
MMBT2222A-GS08
D-74025
12-Dec-03
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6R450E6
Abstract: E6 DIODE diode smd E6 IPx60R450E6 JESD22 6R45 to252 footprint wave soldering TRANSISTOR SMD MARKING CODE 42 IPA60R450E6
Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R450E6 Data Sheet Rev. 2.0, 2010-07-26 Final Industrial & Multimarket 600V CoolMOS™ E6 Power Transistor 1 IPD60R450E6, IPP60R450E6 IPA60R450E6 Description
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IPx60R450E6
IPD60R450E6,
IPP60R450E6
IPA60R450E6
6R450E6
E6 DIODE
diode smd E6
IPx60R450E6
JESD22
6R45
to252 footprint wave soldering
TRANSISTOR SMD MARKING CODE 42
IPA60R450E6
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DFN3020
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A
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ZXTC6720MC
185mV
-220mV
DS31929
DFN3020
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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AN1853
Abstract: 1853 transistor AN-1853 APP1853 transistor crossover
Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: External Pass Transistor Lowers Dropout Voltage Jan 15, 2003 APPLICATION NOTE 1853 External Pass Transistor Lowers Dropout Voltage For linear regulators, dropout voltage VIN - VOUT is measured at the minimum input voltage for which
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100mA
100mV
com/an1853
AN1853,
APP1853,
Appnote1853,
AN1853
1853 transistor
AN-1853
APP1853
transistor crossover
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A
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ZXTC6720MC
185mV
-220mV
DS31929
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A
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ZXTC6720MC
ZXTDE4M832
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Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
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SGA9189Z
OT-89
SGA9189Z
39dBm,
SGA9189Zâ
SGA9189ZSQ
SGA9189ZSR
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Untitled
Abstract: No abstract text available
Text: LT1303CN8 Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 185k UV Lockout (Y/N)No Soft Start (Y/N)No Output ConfigOpen-Coll. Output Transistor Current (A)1.2 Output Transistor Voltage (V)25 Supply Voltage Minimum (V)2.2
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LT1303CN8
Code8-1844
NumberLN00801844
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Untitled
Abstract: No abstract text available
Text: LT1303CS8 Linear ICs Dual-Output Current-Mode SMPS Circuit status Military/High-RelN Maximum Frequency Hz 185k UV Lockout (Y/N)No Soft Start (Y/N)No Output ConfigOpen-Coll. Output Transistor Current (A)1.2 Output Transistor Voltage (V)25 Supply Voltage Minimum (V)2.2
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LT1303CS8
Code8-1844
NumberLN00801844
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sga9189z
Abstract: marking p1z SGA-9189Z marking p1z transistor
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
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SGA9189Z
SGA9189Z
OT-89
39dBm,
SGA9189Z"
SGA9189ZSQ
SGA9189ZSR
marking p1z
SGA-9189Z
marking p1z transistor
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2SC5005
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
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SGA9189
Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to
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SGA-9189
OT-89
39dBm,
SGA9189Z"
SGA9189"
SGA-9189Z
EDS-101497
SGA9189
marking p1z
130C
SGA9189Z
trace code marking RFMD
SGA-9189Z
marking p1z transistor
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motorola transistor ignition
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR
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BU323AP
340D-01
motorola transistor ignition
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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transistor bf 185
Abstract: BF185 bf 185 BF 185 transistor coe br
Text: BF 185 w Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar R F Transistor Anwendungen: Allgem ein und HF-Verstärkerstufen bis 100 MHz General and RF am plifier stages up to 100 MHz Applications: Besondere Merkmale: • Rauschmaß 4 dB
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d1273
Abstract: SS-220 10v PA1851 UPA1851GR-9JG
Text: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent
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uPA1851
105mQMAX.
210mQMAX.
J45a9
d1273
SS-220 10v
PA1851
UPA1851GR-9JG
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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transistor 1211
Abstract: transistor su 312 transistor zo 109
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the
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2SC5005
2SC5005
Collect69
transistor 1211
transistor su 312
transistor zo 109
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