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    TRANSISTOR 1CS Search Results

    TRANSISTOR 1CS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1CS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor Bc 580

    Abstract: marking 1cs 847S transistor bc 100
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration


    Original     		PDF OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100

    transistor bc icbo nA npn

    Abstract: 847S Q62702-C2372 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code


    Original     		PDF Q62702-C2372 OT-363 May-12-1998 transistor bc icbo nA npn 847S Q62702-C2372 marking 1cs

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		PDF BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Jul-02-2001 EHP00365 BC847S VPS05604

    Untitled

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain 4 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package C1 B2 E2 6 5


    Original     		PDF BC847S EHA07178 OT363

    847S

    Abstract: VPS05604 marking 1cs
    Text: BC 847S NPN Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604


    Original     		PDF VPS05604 EHA07178 OT-363 EHP00381 EHP00367 Nov-08-1999 EHP00365 EHP00364 847S VPS05604 marking 1cs

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 BC847S VPS05604

    BC847S

    Abstract: VPS05604
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 EHP00381 EHP00367 Nov-29-2001 EHP00365 BC847S VPS05604

    MARKING 1cs

    Abstract: No abstract text available
    Text: BC847S NPN Silicon AF Transistor Array 4  For AF input stages and driver applications 5 6  High current gain  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2


    Original     		PDF BC847S VPS05604 EHA07178 OT363 MARKING 1cs

    BC846U/S

    Abstract: BC846U
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 BC846U/S

    1DS sot363

    Abstract: marking 1DS sot363
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 1DS sot363 marking 1DS sot363

    marking 1DS sot363

    Abstract: 1Ds SOT363 BC846S BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846S BC846U EHA07178 marking 1DS sot363 1Ds SOT363 BC846U BC847S BC847U SC74 1CS MARKING 5 pin IC marking ms marking 1cs

    h11e

    Abstract: No abstract text available
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 h11e

    MARKING CODE CCB

    Abstract: BC847S
    Text: BC846S/ BC846U/ BC847S NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see


    Original     		PDF BC846S/ BC846U/ BC847S BC846S BC847S: BC846U EHA07178 MARKING CODE CCB BC847S

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended tor use in horizontal deflection circuits of large screen colour television receivers.


    OCR Scan     		PDF BU2520DX 100Pp/P

    QM30DY-H

    Abstract: QM30DY-HB
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Q M30DY-HB • • • • • Ic Collector current. 30A Vcex Collector-emitter voltage. 600V hFE DC current gain. 750


    OCR Scan     		PDF QM30DY-HB M30DY-HB E80276 E80271 Vcc-300V QM30DY-H QM30DY-HB

    2N404 transistor

    Abstract: 2N404 VCE0-20V Germanium power
    Text: DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404 is a Germanium PNP Transistor designed for low frequency medium power amplifier and switching applications. MAXIMUM RATINGS Tfl=25°C Collector-Base Voltage Col 1ector-Emitter Voltage (Punch-through) Emitter-Base Voltage


    OCR Scan     		PDF 7X10-4 2N404 transistor 2N404 VCE0-20V Germanium power

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan     		PDF Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103

    2SD2604

    Abstract: 5001T
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2


    OCR Scan     		PDF 2SD2604 2SD2604 5001T

    transistor bc 499

    Abstract: 1CS K2 marking 1cs transistor Bc 580
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code


    OCR Scan     		PDF Q62702-C2372 OT-363 BC847S transistor bc 499 1CS K2 marking 1cs transistor Bc 580

    5b1 transistor

    Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type


    OCR Scan     		PDF Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor

    2N3820

    Abstract: 2n3820 transistor to 92 case
    Text: Central 2N3820 P-CHANNEL JUNCTION FET ♦II* Central Semiconductor Corp. Central semiconductor Corp. JEDEC TO-92 CASE 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3820 type is a Silicon P-Channel Transistor designed for low level amplifier applications.


    OCR Scan     		PDF 2N3820 2n3820 transistor to 92 case

    2N6558

    Abstract: 2N6557 2N6559
    Text: Datasheet 2N6557 2N6558 2N6559 NPN SILICON Hlr - VOLTAGE TRANSISTOR F o n fH i• i i G m i wm i ^ - - ■ semiconductor Corp- JEDEC 7 j -202 CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N6557 2N6558 2N6559 7j-202 20MHz 2N6558 2N6557 2N6559

    MPQ2907

    Abstract: c-300mA MPQ2906 1-B215
    Text: Data Sheet MPQ2906 MPQ2907 PNP S IL IC O N QUAD TRANSISTOR S e m ic o n d u c to r C o rp . 145 Adams Ave., Hauppauge, N Y 11788 USA Phone 516 435-111 0 JEDEC T O - 116 CASE FAX (516) 4 3 5 -1 8 2 4 Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan     		PDF MPQ2906 MPQ2907 O-116 MPQ2906, MPQ2907 150mA, 300mA, MPQ2906) MPQ2907) c-300mA 1-B215

    d 3151

    Abstract: marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s
    Text: M IL -S -19500/17 8B N AVY 29 May 1964_ S u p e r s e d in g M IL -S -19500/178A (NAVY) 13 O ctober 1961 (See 6.2) MILITARY SPECIFICATION TRANSISTOR, PNP, CERMAMUM TYPF 2N11G5 1. hi SCOPE 1.1 Scop«.- This specification covers the d tU t. requirem ents (or a ijerm aniuin, PNP tra n sisto r and is


    OCR Scan     		PDF MIL-S-19500/17 MIL-S-19500/178A 2N11G5 MIL-S-19500, d 3151 marking 1GL n437 FSC5960J marking rut mil-std-750 3076 2SA 1964 transistor marking 75s