Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 1D Search Results

    TRANSISTOR 1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    germanium transistors PNP

    Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
    Text: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,


    Original     		PDF IBM43RF0100 IBM43RF0100EV 823Vdc. germanium transistors PNP SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809

    SGA8543Z-EVB2

    Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
    Text: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The


    Original     		PDF SGA8543Z SGA8543Z 50MHzto3 SGA8543ZSQ SGA8543ZSR SGA8543Z-EVB1 DS100809 SGA8543Z-EVB2 marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P

    Untitled

    Abstract: No abstract text available
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA9089Z OT-89 SGA9089Z 50MHz 05GHz 44GHz

    Transistor TL 31 AC

    Abstract: j142
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA9089Z OT-89 SGA9089Z 50MHz 44GHz 170mA DS110606 Transistor TL 31 AC j142

    SiGe POWER TRANSISTOR

    Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
    Text: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA9089Z SGA9089Z OT-89 50MHz 05GHz 44GHz SiGe POWER TRANSISTOR Gan hemt transistor RFMD InP HBT transistor low noise

    SGA-9089Z

    Abstract: InP HBT transistor low noise
    Text: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from


    Original     		PDF SGA-9089Z OT-89 SGA-9089Z 50MHz 170mA EDS-105051 SGA9089Z" InP HBT transistor low noise

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original     		PDF SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1

    Untitled

    Abstract: No abstract text available
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


    Original     		PDF SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original     		PDF SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)


    Original     		PDF 2SC2712 150mA 2SA1162 OT-23 100mA QW-R206-029

    C 029 Transistor

    Abstract: UTC 2SA1162 ic utc 200 audio amplifier low noise audio npn transistor
    Text: UTC 2SC2712 NPN EPITAXIAL PLANAR TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES 3 *High Voltage and High Current :VCEO=50V,IC=150mA Max. *Excellent hFE Linearity :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) *High hFE:hFE=70~700 *Low Noise:NF=1dB(Typ.),10dB(MaX.)


    Original     		PDF 2SC2712 150mA 2SA1162 OT-23 QW-R206-029 C 029 Transistor UTC 2SA1162 ic utc 200 audio amplifier low noise audio npn transistor

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
    Text: SILICON TRANSISTOR NE69039 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 • 4 PIN MINI MOLD PACKAGE: NE69039


    Original     		PDF NE69039 NE69039 -j100 24-Hour RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NE68839 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    sga9189z

    Abstract: marking p1z SGA-9189Z marking p1z transistor
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


    Original     		PDF SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor

    L-Band 1200-1400 MHz

    Abstract: diode gp 429 Radar x band radar HV400
    Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400

    SGA9189

    Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
    Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to


    Original     		PDF SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


    Original     		PDF SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89

    Untitled

    Abstract: No abstract text available
    Text: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel


    Original     		PDF KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF

    Untitled

    Abstract: No abstract text available
    Text: BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The


    Original     		PDF BLF647PS

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    QM300HA-H

    Abstract: qm500ha-h QM10HA-HB QM20HA-HB QM30HQ-24 QM100HC-M qm400ha-h QM20HA QM20HA-H QM600HA-24
    Text: POWER MODULES • TRANSISTOR MODULES # T ra n s is to r m odules Sin g le arm Max, ratings Electrical characteristics Transistor section Type No, Veos (sus) fe fe (A) (A) Dtode section _ lc Pe m Transistor section hFE V oe (sat) ÍV) (/<sl Diode section)


    OCR Scan     		PDF QM5HG-24 QM10HB-2H QM30HQ-24 QM10HA-HB QM15HA-H QM20HA-HB QM30HA-H QM30HA-HB QM50HA-H QM50HA-HB QM300HA-H qm500ha-h QM100HC-M qm400ha-h QM20HA QM20HA-H QM600HA-24