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    TRANSISTOR 1G Search Results

    TRANSISTOR 1G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    smd transistor 1g

    Abstract: SMD transistor code 24 smd transistor 24 sot23 transistor SMD 24 TRANSISTOR SMD MARKING CODE transistor marking SA sot-23 smd transistor marking 1h smd transistor .1G TRANSISTOR SMD MARKING CODE 2V smd transistor SA
    Text: SMD General Purpose Transistor NPN MMBTA05/MMBTA06 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package


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    PDF MMBTA05/MMBTA06 OT-23 OT-23, MIL-STD-202G, MMBTA05 MMBTA06 smd transistor 1g SMD transistor code 24 smd transistor 24 sot23 transistor SMD 24 TRANSISTOR SMD MARKING CODE transistor marking SA sot-23 smd transistor marking 1h smd transistor .1G TRANSISTOR SMD MARKING CODE 2V smd transistor SA

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    PDF BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105

    Untitled

    Abstract: No abstract text available
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    PDF BUD42D D42DG BUD42D/D

    Untitled

    Abstract: No abstract text available
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    PDF BUD42D BUD42D BUD42D/D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBTA06 MMBTA56

    1gm transistor

    Abstract: 1GM sot-23 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-23 MMBTA06 MMBTA56 100mA 100mA, 100MHz 1gm transistor 1GM sot-23 transistor

    369D

    Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    PDF BUD42D BUD42D BUD42D/D 369D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG

    2SC4225

    Abstract: 9015 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band.


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    PDF 2SC4225 2SC4225 9015 transistor

    D42DG

    Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
    Text: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic


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    PDF BUD42D BUD42D BUD42D/D D42DG BUD43D transistor 369D BUD42DT4 MPF930 MTP8P10 MUR105

    oscillatore 1ghz

    Abstract: NTE108 NPN Transistor TO92
    Text: NTE108 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise


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    PDF NTE108 NTE108 140kHz 60MHz 200MHz 500MHz oscillatore 1ghz NPN Transistor TO92

    1gm marking

    Abstract: No abstract text available
    Text: MMBTA06 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case


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    PDF MMBTA06 MMBTA56 MPSA06. OT-23 MMBTA06 MMBTA06-GS18 MMBTA06-GS08 D-74025 01-Sep-04 1gm marking

    transistor smd 1E

    Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
    Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


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    PDF BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a

    smd transistor marking BL

    Abstract: smd transistor marking 1E smd transistor .1G CSC2712 CSC2712BL CSC2712GR CSC2712Y ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


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    PDF OT-23 CSC2712 CSC2712Y CSC2712GR CSC2712BL C-120 smd transistor marking BL smd transistor marking 1E smd transistor .1G CSC2712 ts 4141 TRANSISTOR smd transistor 1f sot-23 marking 1F SOT-23

    ts 4141 TRANSISTOR smd

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CSC2712 SOT-23 Formed SMD Package SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking CSC2712Y=1E CSC2712GR G =1F CSC2712BL(L)=1G Pin configuration 1 = BASE


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    PDF CSC2712 OT-23 CSC2712Y CSC2712GR CSC2712BL C-120 ts 4141 TRANSISTOR smd

    transistor marking MCs

    Abstract: SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11
    Text: BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration BFS 17W MCs 1=B Q62702-F1645 2=E Package 3=C SOT-323 Maximum Ratings of any single Transistor Parameter


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    PDF Q62702-F1645 OT-323 Nov-28-1996 transistor marking MCs SOT 23 CODE MCS NPN marking MCs marking MCs sot-323 Q62702-F1645 bfs 11

    SMLBFY

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR Semelab Limited SMLBFY90 • LOW NOISE TRANSISTOR • FOR USE IN BROAD AND NARROW-BAND AMPLIFIERS UP TO 1GHz ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tstg Tj Collector - Base Voltage


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    PDF SMLBFY90 200mW IS21I2 200MHz O-206AF) SMLBFY

    8080-1G

    Abstract: 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39
    Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 TO-3 Power Transistor Sockets 8080-1G Series 8080-1G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8080-1G family of TO-3 Power Transistor Sockets is used for both


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    PDF 8080-1G 8080-1G7 8080-1G44 8080-1G9 8080-1G25 8080-1G44 8080-1G36 8080-1G37 8080-1G38 1G25 1g29 1g44 8080 transistor sockets 1G14 MIL-STD-12883 1G35 1g39

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


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    PDF CB-19 BUX45 transistor et 460

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    transistor D 2395

    Abstract: NEC 2501 re 443
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.


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    PDF 2SC4225 2SC4225 transistor D 2395 NEC 2501 re 443

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    TRANSISTOR 1G

    Abstract: No abstract text available
    Text: Catalog 1307612 4 M V IV * Specialty Sockets Revised 7-01 TO-3 Power Transistor Sockets 8080-1G Series PERFORMANCE SPECIFICATIONS: FEATURES: The 8080- 1G family of TO-3 Power Transistor Sockets is used for both small and large signal devices. Used in power supplies, power amplifiers,


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    PDF 8080-1G 8080-1G44 MIL-STD-202, TRANSISTOR 1G