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    TRANSISTOR 1GS Search Results

    TRANSISTOR 1GS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1GS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor 1gs

    Abstract: T0-220AB BUK455-60A
    Text: Phittps Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK455-60A/B BUK455 T0220AB transistor 1gs T0-220AB BUK455-60A PDF

    transistor 1gs

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK453-60A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


    OCR Scan     		BUK453-60A/B BUK473-60A/B BUK473 PINNING-SOT186A 1E-03 IE-05 1E-06 transistor 1gs PDF

    BUK453-100A

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL L.5E D • 711Dfl2t QDb4041 MTO * P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		711Dfl2t QDb4041 BUK453-1OOA/B T0220AB BUK453 -100A -100B BUK453-100A PDF

    transistor marking code 325

    Abstract: BSP110 marking r8v
    Text: • 1^53^31 0G25502 flS5 H A P X N AMER PHILIPS/ DIS CRETE BSP110 fc>7E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and designed fo r use in telephone ringer circuits and fo r application w ith relay, high-speed and line transformer


    OCR Scan     		0G25502 BSP110 OT223 7Z94040 transistor marking code 325 BSP110 marking r8v PDF

    2SK425

    Abstract: NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor
    Text: Junction Field Effect Transistor 2SK425 <BJSìli Hi « ffl N-Channel Silicon Junction Field Effect Transistor A u d io F re q u e n cy A m p lifier fl'JK E l/ P A C K A G E DIMENSIONS ftë / F E A T U R E U nit ; mm U High gn, t " f -i 1 - ì 'V ? u > ^ frû ; <


    OCR Scan     		2SK425 2SK425 NEC 2SK425 S-10 X17 marking SX50V 4511B1 N-Channel Silicon Junction Field Effect Transistor PDF

    K545

    Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
    Text: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		D03077G BUK545-200A/B PINNING-SOT186 BUK545 -200A -200B K545 NDS 40-30 BUK545-200A BUK545-200B cf rh transistor 4428A PDF

    2SK1346

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :


    OCR Scan     		2SK1346 040ft 10tfs 00A/us 2SK1346 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR1103 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22KQ, RJ=22KQ) • Complement lo KSR2103 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )


    OCR Scan     		KSR1103 KSR2103 OT-23 100hA PDF

    N4416

    Abstract: 2M44 2N4416 2N4416A 2n4416 transistor
    Text: Datasheet Central 2N4416 2N4416A Sem iconductor Corp. N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-72 CASE DESCRIPTION


    OCR Scan     		2N4416 2N4416A 2M4416A 2N4416 2N4416A N4416 2M44 2n4416 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3403 n TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE -MOS V 2SK3403 TENTATIVE SWITCHING REGULATOR APPLICATIONS UNIT:mm • Low Drain - Source ON Resistance: R d s (ON) = 0-29 H ( Typ.) • High Forward Transfer Admittance : |YfS| = 5.8 S ( Typ.)


    OCR Scan     		2SK3403 PDF

    2N4338

    Abstract: 2N4339 2N4340 2N4341
    Text: Datasheet ^ _ • 2N4338 PO H A m m ■ 2N4339 2N4340 2N4341 Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		2N4338 2N4339 2N4340 2N4341 2N4338 2N4339 2N43zt0 2N4341 PDF

    YTFP451

    Abstract: Field Effect Transistor Silicon N Channel MOS vdss 600
    Text: YTFP451 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS h HIGH SPEED.HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,OC-OC CONVERTER AND MOTOR U nit in na DRIVE APPLICATIONS. 1&9MAX. m FEATURES: • Low Drain-Source ON Resistance :


    OCR Scan     		YTFP451 250/uA 010DE 10OA/xts YTFP451 Field Effect Transistor Silicon N Channel MOS vdss 600 PDF

    OF TRANSISTOR 2N5485

    Abstract: 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5484 2N5486
    Text: Datasheet 2N5484 THRU 2N5486 Central Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 N CHANNEL JUNCTION F IE L D EFFECT TRANSISTOR JEDEC TO-92 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		2N5484 2N5486 100MHz 400MHz 400MHz OF TRANSISTOR 2N5485 2N5486 Transistor 2N5485 DATASHEET OF TRANSISTOR 2N5485 2N5486 PDF

    YTF821

    Abstract: No abstract text available
    Text: YTF821 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE TT-MOSn INDUSTRIAL APPLICATIONS U n i t in ram HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC C ONVERTER AND MOTOR 1 0.3 MAX. j2(3.6±0.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance


    OCR Scan     		YTF821 i-360V, YTF821 PDF

    AYN TI W

    Abstract: iGSS 100nA Vgs 0v
    Text: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		TCH72SD 100nA 300uA 20kfi) AYN TI W iGSS 100nA Vgs 0v PDF

    2SK1487

    Abstract: s20k 1d 1107 s20k 250
    Text: 2SK1487 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE {»-MOSm-5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 15.9MUC. 0 3 .2 ± o 2 FEATURES: • Low Drain-Source ON Resistance : RDS 0N) = 0.64Q (Typ.)


    OCR Scan     		2SK1487 10jus 10OA/its 2SK1487 s20k 1d 1107 s20k 250 PDF

    bss84

    Abstract: 013A1 marking BSs sot23 siemens BSS84 siemens
    Text: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type lD BSS84 Vbs -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 -0.13 A Pin 3 S ROS{on) Package Marking


    OCR Scan     		BSS84 BSS84 OT-23 Q62702-S568 Q67000-S243 E6327 E6433 OT-23 013A1 marking BSs sot23 siemens BSS84 siemens PDF

    2N3820

    Abstract: 2n3820 transistor to 92 case
    Text: Central 2N3820 P-CHANNEL JUNCTION FET ♦II* Central Semiconductor Corp. Central semiconductor Corp. JEDEC TO-92 CASE 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3820 type is a Silicon P-Channel Transistor designed for low level amplifier applications.


    OCR Scan     		2N3820 2n3820 transistor to 92 case PDF

    smd transistor marking dj

    Abstract: SMD Transistor PIT BUZ103SL E3045 Q67040-S4008-A2 P-T0263-3-2
    Text: ,•— BUZ 103SL Infineon \m p fO ',c d l w • e fi n o I o g I e $ ’ SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage Vds • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current


    OCR Scan     		BUZ103SL BUZ103SL P-T0220-3-1 Q67040-S4008-A2 E3045A P-T0263-3-2 Q67040-S4008-A6 BU2103SL E3045 smd transistor marking dj SMD Transistor PIT PDF

    2SK33

    Abstract: m745
    Text: SE P 2 5 '0 0 06:01 »CCT-FftX» HNO:05250258 < t a a lK ^ R^67361 M745 [A lt.] » 1 5 /0 1 / OUT:0001 T O S H I B A 2SK3399 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE * -MOSV 2SK3 3 9 9


    OCR Scan     		2SK3399 20kil) P017/017 TKY0808-T 2SK33 m745 PDF

    BUZ71A

    Abstract: BUZ71
    Text: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics


    OCR Scan     		BUZ71A T0-220AB BUZ71A BUZ71 PDF

    DIODE S4 71

    Abstract: DIODE S4 64 Siemens DIODE E 1220 BUZ 1025 SS 410
    Text: SIEMENS BUZ 102S-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Avalanche-rated • d u /d i rated Type ^DS b f f DS on Package Ordering Code BUZ 102S-4 55 V 6.4 A 0.028 Q, P-DSO-28 C67078-S. . . . -A. Maximum Ratings


    OCR Scan     		102S-4 VPS05123 102S-4 P-DSO-28 C67078-S. DIODE S4 71 DIODE S4 64 Siemens DIODE E 1220 BUZ 1025 SS 410 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 324 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Vbs th = 1-5 .2.5 V Type VDS b f lDS(on) Package Marking BSP 324 400 V 0.17 A 25 n SOT-223 BSP 324 Type BSP 324 Ordering Code Q67000-S215 Tape and Reel Information


    OCR Scan     		OT-223 Q67000-S215 E6327 PDF

    transistor buz 19

    Abstract: diode zd 12 diode zd 22 JS 8 diode
    Text: SIEMENS BUZ 104SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • d v/d t rated Type ^DS b f f DS on Package Ordering Code BUZ 104SL-4 55 V 3.2 A 0.125 Q P-DSO-28 C67078-S. . . . . . .


    OCR Scan     		104SL-4 VPS05123 104SL-4 P-DSO-28 C67078-S. transistor buz 19 diode zd 12 diode zd 22 JS 8 diode PDF