TRANSISTOR 1P F Search Results

TRANSISTOR 1P F Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 1P F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
uj01 Abstract: M33 TRANSISTOR Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE	Original	PDF	TC-2173 1988M uj01 M33 TRANSISTOR
MARKING 1P Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	PDF	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	PDF	OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	PDF	OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	PDF	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	PDF	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	PDF	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz
Transistor hFE CLASSIFICATION Marking CE Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant	Original	PDF	MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
kst2222a Abstract: No abstract text available Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage	Original	PDF	KST2222A OT-23 KST2222A
KST2222A Abstract: transistor kst2222a Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage	Original	PDF	KST2222A OT-23 KST2222A transistor kst2222a
UTC 225 Abstract: No abstract text available Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE	Original	PDF	MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225
ikf68 Abstract: 1159m transistor 1002 rcx 1002 Text: MAX3640 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic	Original	PDF	MAX3640 test11M02 HDE113032 181E-017 HDE113032 ikf68 1159m transistor 1002 rcx 1002
LMBT2222ATT1G Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.	Original	PDF	LMBT2222ATT1G S-LMBT2222ATT1G SC-89 AEC-Q101 LMBT2222ATT3G S-LMBT2222ATT3G 463C-02. LMBT2222ATT1G
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TSF1P02HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M T S F 1P 02H D Medium Power Surface Mount Products TM OS Single P-Channel Field E ffect Transistor Motorola Preferred Device Micro8 devices are an advanced series of power MOSFETs	OCR Scan	PDF	TSF1P02HD/D 46A-02 MICR08

CM603 Abstract: No abstract text available Text: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1\|,& . (1p}\| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode	OCR Scan	PDF
transistor BR A 94 Abstract: bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A Text: BCW94 A.B.C BCW95A.B NPN SILICO N TRANSISTOR, EPIT A X IA L PLANAR T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L • LF Amplification Amplification B F CE0 I 40 V BCW 94 160 V BCW 95 ■c °<4 A h ,1P 100-200 (A <B) (C) (1 5 0 m A 7 w iS 1 5 0 ' 3 0 0	OCR Scan	PDF	wil150 CB-76 transistor BR A 94 bcw 25 transistor bcw 94 b transistor A 94 bcw 95 transistor transistor BCW 94 c bcw94b BCW95 BCW95B bcw94A
TRANSISTOR 1P Abstract: 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 2SC4989 1P RF uhf power transistor 50W Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE D ESC R IPTIO N 2SC4989 is a silicon NPN epitaxial planar type transistor O UTLINE DRAW ING Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEA TU R ES • High power output and high gain : Po S 65W, Gpe S 5.1 dB,	OCR Scan	PDF	2SC4989 2SC4989 520MHz, T-40E Tc-25^ 520MHz TRANSISTOR 1P 1p TRANSISTOR NPN Silicon Epitaxial Planar Transistor 700 v MITSUBISHI FERRITE transistor 1P F mitsubishi rf transistor 1P t 1P RF uhf power transistor 50W
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,	OCR Scan	PDF	2SC4989 2SC4989 520MHz, 520MHz
2SC741 Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm	OCR Scan	PDF	2SC741 Gpeii13dB 150MHz 2SC741 transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor
2SC2053 Abstract: transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de signed for R F amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X	OCR Scan	PDF	2SC2053 175MHz 2SC2053 transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor
2SC1970 Abstract: 2sc1970 transistor T-30 parameters S transistor NPN Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7	OCR Scan	PDF	2SC1970 2SC1970 2sc1970 transistor T-30 parameters S transistor NPN
package drawing T46 Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw Text: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m	OCR Scan	PDF	2SC3404 2SC3404 75MHz, 175MHz, package drawing T46 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw
TK512CB Abstract: TK512 Tektronix schematic Text: TEKTRONIX INC/ INTEGRATED SIE » H aiQblSH DODOlbb S il T -¥ /S 5 T r i / ! C r \ INTEGRATED CIRCUITS OPERATION CHARGE COUPLED DEVICES SPECIFICATIONS } OPERATINGINFORMATION ] m Front Illuminated or 13 m m M @ 1 m m thinned back Illuminated Large area format: §12 X	OCR Scan	PDF	TK512 TK512CB Tektronix schematic
2SC1969 Abstract: 2sc1969 transistor mitsubishi 2sc1969 T-30 RF POWER TRANSISTOR NPN Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 1 9 6 9 is a silicon N P N epitaxial planar type transistor designed Dimensions in mm for R F power amplifiers on H F band m obile radio applications. 9.1 ± 0 . 7	OCR Scan	PDF	2SC1969 2SC1969 O-22C) 2sc1969 transistor mitsubishi 2sc1969 T-30 RF POWER TRANSISTOR NPN

TRANSISTOR 1P F Search Results

TRANSISTOR 1P F Result Highlights (5)

TRANSISTOR 1P F Datasheets Context Search

uj01

MARKING 1P

Untitled

Untitled

Untitled

Untitled

Untitled

Transistor hFE CLASSIFICATION Marking CE

kst2222a

KST2222A

UTC 225

ikf68

LMBT2222ATT1G

Untitled

CM603

transistor BR A 94

TRANSISTOR 1P

Untitled

2SC741

2SC2053

2SC1970

package drawing T46

TK512CB

2SC1969