transistor 1PC
Abstract: marking 1PC
Text: Central CMST2222A TM Semiconductor Corp. SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small
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CMST2222A
OT-323
100mA,
150mA,
x10-4
x10-4
transistor 1PC
marking 1PC
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transistor 1PC
Abstract: CMST2222A ic 455 marking 1PC
Text: CMST2222A SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small
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CMST2222A
CMST2222A
OT-323
100mA,
150mA,
x10-4
transistor 1PC
ic 455
marking 1PC
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Untitled
Abstract: No abstract text available
Text: Central" CMST2222A Semiconductor Corp. SUPERmmi NPN SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal,
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CMST2222A
OT-323
150mA,
OT-323
26-September
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LB-215
Abstract: No abstract text available
Text: Central CMST2222A SURFACE MOUNT SUPERmini NPN SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur face mount package, designed for small signal,
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CMST2222A
100mA,
150mA-
150mA,
OT-323
OT-323
LB-215
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PDF
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transistor 1PC
Abstract: CMST2222A 1pc marking
Text: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general
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CMST2222A
OT-323
100mA,
150mA,
x10-4
transistor 1PC
CMST2222A
1pc marking
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PDF
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Untitled
Abstract: No abstract text available
Text: CMST2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMST2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general
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CMST2222A
OT-323
100mA,
150mA,
x10-4
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NPN transistor a777
Abstract: 2SC3103 J55J
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3103 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION 2S C 3103 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF power amplifier applications. OUTLINE DRAWING Dimensions in mm FEATURES • High power gain: G peê 6 .7 d B
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2SC3103
520MHz,
NPN transistor a777
J55J
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TLP531JLP532 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T I T I P 5 3 ? PRO GRAM M ABLE CONTROLLERS U n it in mm AC/DC-INPUT MODULE <;ni in <;t a t f rfi a y The ruSirLlBA T.LJr’531 and TLF532 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a
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TLP531JLP532
TLF532
TLP532
2500Vrms
E67349
11-7A8
TLP531
TLP532
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistor SMBT4124 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 4124 sZC Q68000-A8316 B SOT-23 E C Maximum Ratings
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SMBT4124
Q68000-A8316
OT-23
flE35bQ5
G12255b
fiE35bOS
D1EE557
235b05
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC4091 J-FET INPUT LOW-OFFSET OPERATIONAL AMPLIFIER The ,uPC4091 operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor fr = 300 MHz in the output stage solves the
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UPC4091
uPC4091
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Untitled
Abstract: No abstract text available
Text: TPC8001 TO SHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI T P ffin m LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS PORTABLE MACHINES AND TOOLS NOTE BOOK PC • Low Drain-Source ON Resistance : Rj)g (ON)= 15m£2 (Typ.) • High Forward Transfer Adm ittance: |Yfs| = IIS (Typ.)
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TPC8001
--24V,
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _ ^PC4092 J-FET INPUT LOW-OFFSET DUAL OPERATIONAL AMPLIFIER The ,uPC4092 dual operational amplifier offers high input impedance, low offset voltage, high slew rate, and stable AC operating characteristics. NEC's unique high-speed PNP transistor fr = 300 MHz in the output stage solves the
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PC4092
uPC4092
C11531E
C10535E
C13388E
MEI-1202
X10679E
IEI-1212
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _ ^PC4094 J-FET INPUT LOW-OFFSET DUAL OPERATIONAL AMPLIFIER Dual operational amplifier ,uPC4094 is a high-speed version of the ,uPC4092. NEC's unique high-speed PNP transistor fr = 300 MHz in the output stage realizes a high slew rate of 25 V/^ts under voltage-follower conditions
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PC4094
uPC4094
uPC4092
PC4094
C11531E
C10535E
C13388E
MEI-1202
X10679E
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PDF
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BUL4370D
Abstract: No abstract text available
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4370D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管
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BUL4370D
BUL4370D
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BUL6845D
Abstract: NPN transistor Electronic ballast
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6845D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管
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BUL6845D
BUL6845D
NPN transistor Electronic ballast
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max 474 ic data
Abstract: NPN Transistor 1A metal switching
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2160DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管
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BUL2160DL
max 474 ic data
NPN Transistor 1A metal switching
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150UM
Abstract: BUL2190DL
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2190DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管
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BUL2190DL
150UM
BUL2190DL
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Bonding
Abstract: Shenzhen SI Semiconductors BUL2260DL NPN transistor Electronic ballast semiconductors
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2260DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管
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BUL2260DL
Bonding
Shenzhen SI Semiconductors
BUL2260DL
NPN transistor Electronic ballast
semiconductors
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PDF
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BUL2300DL
Abstract: transistor cr
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL2300DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管
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BUL2300DL
550um
1000um
950um
BUL2300DL
transistor cr
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NPN transistor Electronic ballast
Abstract: TRANSISTOR 436 BUL6853DL transistor cr
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/ 功率晶体管芯片 NPN Power Transistor Wafer BUL6853DL ●产品特点: 击穿电压稳定,开关速度快 ● High Voltage ,High Switching Speed. ● E-C 极间内置二极管
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BUL6853DL
NPN transistor Electronic ballast
TRANSISTOR 436
BUL6853DL
transistor cr
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BUL4330D
Abstract: No abstract text available
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL4330D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管
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BUL4330D
BUL4330D
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BUL6852D
Abstract: NPN transistor Electronic ballast VCE1 power diode 10a
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6852D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管
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BUL6852D
200mA
BUL6852D
NPN transistor Electronic ballast
VCE1
power diode 10a
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BUL6863D
Abstract: transistor AG 307 semiconductors NPN transistor Electronic ballast
Text: Shenzhen SI Semiconductors Co., LTD. Product Specification NPN 功率晶体管芯片/NPN Power Transistor Wafer 功率晶体管芯片 BUL6863D ●产品特点：击穿电压稳定开关速度快 ●High Voltage, High Switching Speed. ●E-C 极间内置二极管
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BUL6863D
BUL6863D
transistor AG 307
semiconductors
NPN transistor Electronic ballast
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