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    TRANSISTOR 20M Search Results

    TRANSISTOR 20M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 20M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    n24 transistor

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original     		MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R OT-363 QW-R218-017 PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    DSA00897

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original     		MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R OT-363 QW-R218-017 DSA00897 PDF

    advantage and disadvantage of igbt

    Abstract: HFBR1531Z HFBR-1522ETZ
    Text: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence


    Original     		AFBR-0546Z AFBR-0548Z HFBR-0543Z AV02-3407EN AFBR-1624Z/1629Z AFBR-2624Z/2529Z AV02-2699EN HFBR-0500ETZ IEC60664-1 AV02-3500EN advantage and disadvantage of igbt HFBR1531Z HFBR-1522ETZ PDF

    IMX17

    Abstract: 2SD1484K dual transistor
    Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA


    Original     		IMX17 2SD1484K 500mA OT-26 QW-R215-001 IMX17 dual transistor PDF

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., IMT17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR „ FEATURES *Two MMBT2907A chips in an SMT package. *Transistor elements are independent, eliminating interference. *High collector current. Ic = -500mA „ EQUIVALENT CIRCUITS


    Original     		IMT17 MMBT2907A -500mA IMT17L-AG6 IMT17G-AG6-R OT-26 QW-R215-006 DUAL TRANSISTOR PDF

    PH2731-20M

    Abstract: 3 w RF POWER TRANSISTOR 2.7 ghz
    Text: an AMP company Radar Pulsed Power Transistor, 2OW, loops Pulse, 10% Duty PH2731-20M 2.7 - 3.1 GHz v2.00 9co Features ,-^ :22.85> NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigicated Geometry


    Original     		PH2731-20M PI42731 PH2731-20M 3 w RF POWER TRANSISTOR 2.7 ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Two 2SD1484K chips in an SMT package. *Mounting possible with SMT3 automatic mounting machine. *Transistor elements are independent, eliminating interference. *High collector current. Ic=500mA


    Original     		IMX17 2SD1484K 500mA OT-26 QW-R215-001 500mA, 100mA -20mA, 100MHz PDF

    JEDEC MO-187

    Abstract: MO-187 ZXT14P20DX ZXT14P20DXTA ZXT14P20DXTC DSA0037477
    Text: ZXT14P20DX SuperSOT4 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 20m ; IC= -5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		ZXT14P20DX ZXT14P20DXTA JEDEC MO-187 MO-187 ZXT14P20DX ZXT14P20DXTA ZXT14P20DXTC DSA0037477 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR  DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.  FEATURES * Humidifier, DC-DC converter, and general purpose  ORDERING INFORMATION


    Original     		2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 2SC3834L-T3P-T 2SC3834G-T3P-T QW-R203-026 PDF

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T
    Text: SMD General Purpose Transistor NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


    Original     		MMBT2222A OT-23 OT-23, MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T PDF

    2N4401 transistor

    Abstract: 2N4401 NPN Switching Transistor CMLT4413 2N4401 2N4403 NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount
    Text: Central CMLT4413 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY NPN/PNP SILICON TRANSISTOR SOT-563 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT4413 consists of one isolated 2N4401 NPN silicon transistor and one complementary isolated 2N4403 PNP silicon transistor,


    Original     		CMLT4413 OT-563 CMLT4413 2N4401 2N4403 150mA, 2N4401 transistor 2N4401 NPN Switching Transistor NPN, PNP for 500ma, 30v 2n4401 configuration 2N4403 surface mount PDF

    AA3R

    Abstract: 2SB772S V/AA3R
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES


    Original     		2SB772S 2SB772S 2SD882S OT-223 2SB772SL 2SB772S-AA3-R 2SB772SL-AA3-R OT-223 QW-R207-012 AA3R V/AA3R PDF

    BD439

    Abstract: st bd441 BD441 BD442 JESD97 BD441 an
    Text: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance


    Original     		BD441 BD442. OT-32 BD439 st bd441 BD441 BD442 JESD97 BD441 an PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP122 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP122 is a NPN epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ ORDERING INFORMATION Ordering Number


    Original     		TIP122 TIP122 TIP122-T60-K TIP122L-T60-K TIP122-TA3-T TIP122L-TA3-T TIP122-TF3-T TIP122L-TF3-T TIP122-TN3-R TIP122L-TN3-R PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC


    Original     		UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048 PDF

    high voltage fast switching npn transistor

    Abstract: ULB121
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB121 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB121 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		ULB121 ULB121 ULB121G-TM3-T O-251 QW-R213-015 high voltage fast switching npn transistor PDF

    SB2202

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.


    Original     		SB2202 SB2202 SB2202L-x-TM3-R SB2202G-x-TM3-R SB2202L-x-TN3-T SB2202G-x-TN3-T SB2202L-x-TN3-R SB2202G-x-TN3-R O-251 O-252 PDF

    M54577P

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		M54577P M54577P PDF

    2SB772S-T92-B

    Abstract: 2SB772S-T92-K 2SD882S 2SB772S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023
    Text: UNISONIC TECHNOLOGIES CO., 2SB772S PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES


    Original     		2SB772S 2SB772S 2SD882S 2SB772SL 2SB772S-T92-B 2SB772SL-T92-B 2SB772S-T92-K 2SB772SL-T92-K QW-R201-023 2SD882S 2SB772SL-T92-B 2SB772SL-T92-K transistor T 023 PDF

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6720MC ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A


    Original     		ZXTC6720MC ZXTDE4M832 PDF

    NPN Transistor 600V

    Abstract: B528 ULB122
    Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage


    Original     		ULB122 ULB122 ULB122G-xx-TM3-T O-251 QW-R213-014 NPN Transistor 600V B528 PDF