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    TRANSISTOR 21Y Search Results

    TRANSISTOR 21Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 21Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications A 2.0 0.1 Common 0 0.05 0.13 *BOTTOM VIEW Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±12 V ID −4.0 DC Drain current


    Original     		SSM6P49NU PDF

    Untitled

    Abstract: No abstract text available
    Text: ST2309ES P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST2309ES ST2309ES OT-23 -60V/-3 160m-ohm -60V/-1 200ted) PDF

    Untitled

    Abstract: No abstract text available
    Text: ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		ST3421SRG ST3421SRG OT-23 -60V/-5 150m-ohm -60V/-2 185m-ohm PDF

    SSM6P49NU

    Abstract: Q2S13 1PD2
    Text: SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications 1.8V drive Low ON-resistance: RDS on = 157 mΩ (max) (@VGS = -1.8 V) RDS(on) = 76 mΩ (max) (@VGS = -2.5 V) RDS(on) = 56 mΩ (max) (@VGS = -4.5 V)


    Original     		SSM6P49NU SSM6P49NU Q2S13 1PD2 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM6P49NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P49NU Power Management Switch Applications 1.8V drive Low ON-resistance: RDS on = 157 mΩ (max) (@VGS = -1.8 V) RDS(on) = 76 mΩ (max) (@VGS = -2.5 V) RDS(on) = 56 mΩ (max) (@VGS = -4.5 V)


    Original     		SSM6P49NU PDF

    Untitled

    Abstract: No abstract text available
    Text: ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		ST2341SRG ST2341SRG OT-23 -20V/-3 -20V/-2 PDF

    sem 2005

    Abstract: PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A
    Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FMG Mode Field Effect Transistor Preliminary SOT-23 Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)


    Original     		PA102FMG OT-23 Mar-25-2005 sem 2005 PA102FMG p-Channel Logic Level Enhancement Mode sot-23 niko-sem transistor 2A SOT23 SOT-23 2A PDF

    SEM 2004

    Abstract: SOT-23 2A PA102FM 2A sot-23 p-Channel Logic Level Enhancement Mode sot23 CODE 02 niko-sem
    Text: P-Channel Logic Level Enhancement NIKO-SEM PA102FM Mode Field Effect Transistor Preliminary SOT-23 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20 118mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PA102FM OT-23 Nov-02-2004 SEM 2004 SOT-23 2A PA102FM 2A sot-23 p-Channel Logic Level Enhancement Mode sot23 CODE 02 niko-sem PDF

    LR3441

    Abstract: marking code B9 DG SMD Transistor transistor smd sensor 80L transistor bf 175 sdz-370n ccd LZ1032 Transister Data Book
    Text: MOS DATA BOOK General Information Gate Arrays/Standard Cells Display Drivers 3 J T elecommunications II CCDs/CCD Peripherals ICs for Audio/Visual Equipment 6 | Voice/Melody Generators ICs for Clock Others Preface In recent years, the seemingly unlimited progress seen in


    OCR Scan     		LH5047/LH5048 LR3441 marking code B9 DG SMD Transistor transistor smd sensor 80L transistor bf 175 sdz-370n ccd LZ1032 Transister Data Book PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    Motorola Application Note AN-531

    Abstract: MC1596 frequency doubler circuit MC1596 AN531 motorola Motorola Mc 1596 transistor 21Y balanced modulator MC1596 Motorola MC15 MC1596 frequency doubler MCI transformers
    Text: AN-531 Application Note highly versatile block. 1n this co~munications note, building both theoretical practical information designer in the use of this part. tions include and suppressed modulators carrier for the previously forms; frequencv double and are given to aid the


    Original     		AN-531 MC1596 MC1596. Motorola Application Note AN-531 MC1596 frequency doubler circuit AN531 motorola Motorola Mc 1596 transistor 21Y balanced modulator MC1596 Motorola MC15 MC1596 frequency doubler MCI transformers PDF

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    power supply Acbel

    Abstract: marking 23ab transistor code 21y 14AD VDD12B transistor 21Y 22AB MARKING 1AB AMD-8151 acbel power supply
    Text: AMD-8151TM AGP Tunnel Data Sheet 24888 Rev 3.03 - July 12, 2004 TM AMD-8151 Cover page HyperTransportTM AGP3.0 Graphics Tunnel Data Sheet 1 Overview The AMD-8151TM HyperTransportTM AGP3.0 Graphics Tunnel referred to as the IC in this document is a HyperTransport technology (referred to as link in this document) tunnel developed by AMD that provides an


    Original     		AMD-8151TM AMD-8151 power supply Acbel marking 23ab transistor code 21y 14AD VDD12B transistor 21Y 22AB MARKING 1AB AMD-8151 acbel power supply PDF

    SN7449

    Abstract: 54175 SN7401 74L42 SN7437 SN74S40
    Text: Ordering Instructions and Mechanical Data INTEGRATED CIRCUITS MECHANICAL DATA ORDERING INSTRUCTIONS Electrical characteristics presented in this catalog, unless otherwise noted, apply for circuit type s listed in the page heading regardless of package. Except for diode arrays, ECL, and MOS devices, the availability of a circuit function in a


    OCR Scan     		SN15312 SN15325, SN15370 SN7449 54175 SN7401 74L42 SN7437 SN74S40 PDF

    display 7 segmento sm 4105

    Abstract: NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871
    Text: MOS/LSI DATABOOK NATIONAL SEMICONDUCTOR i Edge Index by Product Family Clocks Counters/Timers Electronic Organ Circuits TV Circuits Analog to Digital A /D Converters Communications/CB Radio Circuits Watches Calculators Controller Oriented Processor Systems (COPS)


    OCR Scan     		MM5309 MM5311 J28592 IM-CP70M17/PRINTED display 7 segmento sm 4105 NS_Databook_77 MA1012 MA1002 MM5799 MM5318 MM57109 mm5782n Remote Control Toy Car Receiver IC tx2 MM5871 PDF

    First line 7aa ed tms 3874 9v voltage regulator

    Abstract: RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508
    Text: R O C K W E L L Network access S E M I C O N D U C T O R S Y S T E M S RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY datasheet PROVIDING HIGH SPEED MULTIMEDIA CONNECTIONS September 1998 Preliminary Information This document contains information on a product under development. The parametric information contains target


    Original     		RS8250/1/2/3/4/5 RS825x N825xDSA First line 7aa ed tms 3874 9v voltage regulator RS8250EBGC tms 3874 9v voltage regulator code 9y mrd 14b R7173-11 18AF d725 11AF PE-68508 PDF

    Sii 9573

    Abstract: transistor 21Y S-8252 ed 7aa dude hx 630
    Text: R O C K W E L L S E M I C O N D U C T O R S Y S T E M S access RS8250/1/2/3/4/5 ATM Physical Interface Devices - ATM PHY *Ü O ¥ ¡8 S N & B -, Rockwell September 1998 fô i S y s iiîs Preliminary Information This do cum e nt contains in fo rm a tio n on a pro du ct under developm ent. The param etric in fo rm a tio n contains target


    OCR Scan     		RS8250/1/2/3/4/5 RS8250/1/2/3/4/5 RS825x N825xDSA Sii 9573 transistor 21Y S-8252 ed 7aa dude hx 630 PDF