TRANSISTOR 2206 Search Results

TRANSISTOR 2206 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2206 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RN2206 Abstract: RN2201 RN1201 RN1206 RN2202 RN2203 RN2204 RN2205 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design	Original	PDF	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 RN2206 RN1206 RN2203
RN1204 Abstract: RN1201 RN1202 RN1203 RN1205 RN1206 RN2201 1206 transistor Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design	Original	PDF	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206 1206 transistor
RN1202 Abstract: RN1206 RN1204 RN1201 RN1203 RN1205 RN2201 equivalent transistor 1204 Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors. Simplify circuit design	Original	PDF	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206 equivalent transistor 1204
RN2202 Abstract: RN1201 RN1206 RN2201 RN2203 RN2204 RN2205 RN2206 transistor 2204 transistor 2206 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design	Original	PDF	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 RN1206 RN2203 RN2206 transistor 2204 transistor 2206
RN2202 Abstract: RN2203 RN1201 RN1206 RN2201 RN2204 RN2205 RN2206 transistor 2204 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	PDF	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 RN2203 RN1206 RN2206 transistor 2204
equivalent transistor 1204 Abstract: RN1201 RN1202 RN1203 RN1204 RN1205 RN1206 RN2201 RN1201-RN1206 1204 transistor Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design	Original	PDF	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 equivalent transistor 1204 RN1206 RN1201-RN1206 1204 transistor
transistor 2206 Abstract: transistor 2204 RN2206 equivalent transistor rn2201 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design	Original	PDF	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 transistor 2206 transistor 2204 RN2206 equivalent transistor rn2201
Untitled Abstract: No abstract text available Text: SRA2206M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	PDF	SRA2206M SRA2206M O-92M KSR-I021-003 KSR-I021-003
RN1204 Abstract: RN1203 RN1206 rn1201 RN1202 RN1205 RN2201 equivalent transistor 1206 Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors. l Simplify circuit design	Original	PDF	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206 equivalent transistor 1206
RN1201 Abstract: RN1202 RN1203 RN1204 RN1205 RN1206 RN2201 Text: RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design	Original	PDF	RN1201 RN1206 RN1202 RN1203 RN1204 RN1205 RN2201 RN1201 RN1206
3001 transistor Abstract: transistor 2206 SRA2206M DSA003763 DSA00376337 3001 pnp Text: SRA2206M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	PDF	SRA2206M O-92M KSR-I021-001 SRA220 -10mA -10mA, 3001 transistor transistor 2206 SRA2206M DSA003763 DSA00376337 3001 pnp
transistor 2204 Abstract: rn2202 Text: RN2201~RN2206 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2201,RN2202,RN2203 RN2204,RN2205,RN2206 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z With built-in bias resistors z Simplify circuit design	Original	PDF	RN2201 RN2206 RN2202 RN2203 RN2204 RN2205 RN1201 RN1206 transistor 2204
Untitled Abstract: No abstract text available Text: SRA2206M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	PDF	SRA2206M O-92M KSR-I021-0O KSR-I021-002
2N2222AUE1 Abstract: 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331 Text: INCH-POUND MIL-PRF-19500/672 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.	Original	PDF	MIL-PRF-19500/672 2N2222AUE1 MIL-PRF-19500. OT-23 O-236) 2N2222AUE1 2N2222A JANTX 2N2222A JANTXV sot-23 npn marking code cr 2N2222A JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 2N2222A 331

SRA2206M Abstract: No abstract text available Text: SRA2206M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and	Original	PDF	SRA2206M O-92M KSD-R0B017-000 SRA2206M
2N2907AUE1 Abstract: award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15 Text: INCH-POUND MIL-PRF-19500/686 30 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ This specification is approved for use by all Departments and Agencies of the Department of Defense.	Original	PDF	MIL-PRF-19500/686 2N2907AUE1 MIL-PRF-19500. OT-23 O-236) 2N2907AUE1 award 686 qm marking code sot-23 JESD22-A101 JESD22-A102 JESD22-A103 JESD22-A113 MIL-PRF19500 MARKING code sot23 h15
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
t 326 Transistor Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5 Text: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is	OCR Scan	PDF	653SbQ5 Q62702-U268 fl23SbaS t 326 Transistor 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
transistor tt 2206 Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor Text: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is	OCR Scan	PDF	Q62702-U268 0t304 transistor tt 2206 TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
LT5817 Abstract: af200 Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA LT5817 The RF Line PNP Silicon High Frequency Transistor I t = -400 mA HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e c if ic a lly d e s ig n e d f o r C R T d r iv e r a p p lic a t io n s r e q u ir in g h ig h v o lt a g e a n d h ig h	OCR Scan	PDF	LT5817 LT5817 af200
transistor tt 2206 Abstract: TT 2206 transistor LT1817 transistor LT5817 Text: MOTOROLA SC XSTRS/R F MbE D b3b?ES4 00=14220 1 «flO Tt, MOTOROLA • SEMICONDUCTOR TECHNICAL. DATA I n LT5817 The RF Line PNP S ilicon High Frequency Transistor Iq = —400 m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e cific a lly d esig ned fo r CR T d riv e r a p p lic a tio n s req u irin g h ig h v o lta g e and high	OCR Scan	PDF	LT5817 LT1817 transistor tt 2206 TT 2206 transistor LT1817 transistor LT5817
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF
RN1202 Abstract: ku 611 1204 transistor Transistor Bo 47 rn1206 Transistor 1204 Text: TOSHIBA RN1201-RN1206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1201, RN1202, RN1203, RN1204, RN1205, RN1206 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	PDF	RN1201-RN1206 RN1201, RN1202, RN1203, RN1204, RN1205, RN1206 RN2201 RN1201 RN1202 ku 611 1204 transistor Transistor Bo 47 rn1206 Transistor 1204
transistor 2204 Abstract: No abstract text available Text: TOSHIBA RN2201-RN2206 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS 4.2MAX. • • • • With Built-in Bias Resistors	OCR Scan	PDF	RN2201-RN2206 RN2201, RN2202, RN2203 RN2204, RN2205, RN2206 RN1201 RN1206 RN2201 transistor 2204

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TRANSISTOR 2206 Search Results

TRANSISTOR 2206 Result Highlights (5)

TRANSISTOR 2206 Datasheets Context Search

RN2206

RN1204

RN1202

RN2202

RN2202

equivalent transistor 1204

transistor 2206

Untitled

RN1204

RN1201

3001 transistor

transistor 2204

Untitled

2N2222AUE1

SRA2206M

2N2907AUE1

2sb504

t 326 Transistor

transistor tt 2206

LT5817

transistor tt 2206

Transistor 2SA 2SB 2SC 2SD

RN1202

transistor 2204