2305 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2305 transistor
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2395 transistor
Abstract: No abstract text available
Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-100V;
BLF8G24LS-100GV
BLF8G24LS-100V
24LS-100GV
2395 transistor
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j350 TRANSISTOR
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHT1006N Rev. 0, 5/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET RF power transistor suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
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MHT1006N
MHT1006NT1
j350 TRANSISTOR
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2395 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 2 — 24 February 2014 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2395 transistor
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TRANSISTOR J477
Abstract: J890
Text: Document Number: AFT23S170−13S Rev. 0, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
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AFT23S170â
13SR3
TRANSISTOR J477
J890
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 0, 10/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S006N
AFT27S006NT1
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S010N
AFT27S010NT1
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Untitled
Abstract: No abstract text available
Text: Document Number: AFT27S006N Rev. 1, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.
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AFT27S006N
AFT27S006NT1
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j292
Abstract: aft23h200-4s2l
Text: Document Number: AFT23H200−4S2L Rev. 1, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET AFT23H200−4S2LR6 This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of
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AFT23H200-4S2L
AFT23H200-4S2LR6
j292
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S006N Rev. 2, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
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AFT27S006N
AFT27S006NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
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AFT27S010N
AFT27S010NT1
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2N6438
Abstract: No abstract text available
Text: ISCFdÈ Lûó Lûó text/html About News keyword search: Contact Employment Site Home part number search: 2N6438 #23954 RFQ/Sample Package PNP Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi Maximum Electrical Rating
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2N6438
2N6438
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FPD200 DIE
Abstract: No abstract text available
Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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FPD200
FPD200General
FPD200
mx200Î
19dBm
12GHz
18GHz
FPD200-000
DS090519
FPD200 DIE
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FPD200
Abstract: FPD200 DIE MIL-HDBK-263 bjt 137 FPD200-000
Text: FPD200 FPD200General Purpose pHEMT Die GENERAL PURPOSE pHEMT DIE Package Style: Bare Die Product Description Features The FPD200 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate,
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FPD200
FPD200General
FPD200
25mx200m
19dBm
12GHz
18GHz
FPD200-000
DS090519
FPD200 DIE
MIL-HDBK-263
bjt 137
FPD200-000
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JANTX2N6438
Abstract: No abstract text available
Text: ISCFdȉ ¬ „‰ ¬ „ text/html About News keyword search: Package Division Lawrence Datasheet none Mil-Spec Shipping Features MIL-PRF-19500/5 (none) Qual Data Contact Microsemi ? Home RFQ/Sample PNP Transistor ? Employment Site part number search:
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JANTX2N6438
MIL-PRF-19500/5
JANTX2N6438
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transistor D 2395
Abstract: CONTINENTAL DC-DC CONVERTER transistor 2395 2395 transistor transistor D 2395 a CDD2395
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 9AW TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter.
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CDD2395
O-220
25deg
100ms
C-120
transistor D 2395
CONTINENTAL DC-DC CONVERTER
transistor 2395
2395 transistor
transistor D 2395 a
CDD2395
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SL-4524 The SL-4524 is Stanford Microdevices’ high-linearity 45W LDMOS transistor designed for base station applications at or near 2400 MHz. Rated for minimum output power of 45W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
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SL-4524
SL-4524
SL-45241
SL-45242
SL-45242
SL45241
SL45242
EDS-100948
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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