TRANSISTOR 2688 Search Results

TRANSISTOR 2688 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2688 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10160-001 Abstract: std motor G3202 00002EE0 g3425 Text: HIGH PERFORMANCE TRANSISTOR INVERTER TRUE TORQUE CONTROL DRIVE SERIES PROFIBUS-DP COMMUNICATIONS INTERFACE December, 1998 ICC #10160-001 Introduction Thank you for purchasing the “Profibus-DP Communications Interface” for the Toshiba TOSVERT-130 G3 High-Performance Transistor Inverter. Before using the	Original	OSVERT-130 10160-001 std motor G3202 00002EE0 g3425	PDF
tip122 tip127 audio amp schematic Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.	Original	DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier	PDF
transistor pnp a110 Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D transistor pnp a110 free transistor and ic equivalent data transistor pnp a110 EQUIVALENT	PDF
BD249C equivalent Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D BD249C equivalent 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram	PDF
bd249c equivalent Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2 Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D bd249c equivalent C2688 free transistor and ic equivalent data BD249C MJE180 20 L2	PDF
bd249c equivalent Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	BD249C O-218 BD249C MJE180 C-2688, bd249c equivalent c2688 c2688 transistor tRANSISTOR c2688	PDF
bd249c equivalent Abstract: No abstract text available Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	BD249C O-218 BD249C/D bd249c equivalent	PDF
ATF-26884-STR Abstract: ATF-26884 ATF-26884-TR1 Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz housed in a cost effective microstrip package. This device is	Original	ATF-26884 ATF-26884 ATF-26884-STR ATF-26884-TR1	PDF
Untitled Abstract: No abstract text available Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator	Original	ATF-26884 ATF-26884 Schottkybarrier-ga-165 5965-8703E	PDF
ATF-26884 Abstract: zo 103 ma ATF-26884-STR ATF-26884-TR1 Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator	Original	ATF-26884 ATF-26884 5965-8703E 5980-0024E zo 103 ma ATF-26884-STR ATF-26884-TR1	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2689* transistor Abstract: MRF1035 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor Designed for 10 25-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 70 W PEAK 1025-1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON	OCR Scan	MRF10500 MRF10350 376C00 MRF10070 2689* transistor MRF1035	PDF
c 2688 nec Abstract: TRANSISTOR 2688 C 2688 video output transistor transistor C 2688 Text: NEC S IL IC O N ELECTRON OEVICE T R A N S IS T O R 2S C 2 6 8 8 NPN SILICON TRIPLE DIFFUSED TRANSISTOR VIDEO OUTPUT TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2688 is designed fo r use in C olor T V chrom a o u tp u t circuits. in m illim e te rs inches	OCR Scan	2SC2688 2300pF) 2300pF c 2688 nec TRANSISTOR 2688 C 2688 video output transistor transistor C 2688	PDF

Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
transistor d 2689 Abstract: KD221A10 kd221a1 d 2689 k0221 TRANSISTOR 2688 2689* transistor powerex kd22 Text: mNEREX POUEREX INC _ P ]> • 7ST4bEl GOÜElfil Powerex, Inc., M ills Street, Youngwood, Pennsylvania 1S697 412 925-7272 ■ O KD221A10 Tentative Fast Switching Dual Darlington Transistor Module 100 Amperes/125 Volts Description Powerex Fast Switching Dual Darlington	OCR Scan	KD221A10 Amperes/125 01AC-Ã KD221A10 transistor d 2689 kd221a1 d 2689 k0221 TRANSISTOR 2688 2689* transistor powerex kd22	PDF
A5 GNE mosfet Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA	OCR Scan	1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
capacitor ase 104 Abstract: Z808 w188 trimm resistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 MRF6404K NPN S ilicon RF Pow er Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz.	OCR Scan	MRF6404 DCS1800 1900/Cellular MRF6404K Collector-E100A MRF6404K capacitor ase 104 Z808 w188 trimm resistor	PDF
MHW721A2 Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA	OCR Scan	1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503	PDF
C2688 Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955 Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature	OCR Scan	TIP2955 TIP3055 t0-218aa 22eoi2 D0370D3 TIP2955 C2688 c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688	PDF
TRANSISTOR 2688 Abstract: CE 2711 2SA1150 2SC2682 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	TV25TÃ 2SA1150 TRANSISTOR 2688 CE 2711 2SC2682	PDF
transistor d 2689 Abstract: MRF497 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 40 W NPN SILICON RF POWER TRANSISTOR . . . desig ne d fo r 12.5 vo lt VHF large-signal pow e r a m p lifie r a p p li ca tio n s in co m m ercial and in d u stria l e qu ipm e n t, o pe ra ting in the 25 to 50 MHz fre q u en cy range.	OCR Scan	O-220AB MRF497 transistor d 2689 MRF497	PDF

TRANSISTOR 2688 Search Results

TRANSISTOR 2688 Result Highlights (5)

TRANSISTOR 2688 Datasheets Context Search

10160-001

tip122 tip127 audio amp schematic

transistor pnp a110

BD249C equivalent

bd249c equivalent

bd249c equivalent

bd249c equivalent

ATF-26884-STR

Untitled

ATF-26884

la 4440 amplifier circuit diagram 300 watt

y51 h 120c

2689* transistor

c 2688 nec

Transistor 2SA 2SB 2SC 2SD

ksd 302 250v, 10a

transistor d 2689

A5 GNE mosfet

Motorola transistors MRF 947

capacitor ase 104

MHW721A2

C2688

TRANSISTOR 2688

transistor d 2689