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    TRANSISTOR 287 A Search Results

    TRANSISTOR 287 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 287 A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices gë3 Product Description SLN-287 Stanford M icrodevices’ SLN-287 is a high performance gallium arsenide heterojunction bipolar transistor M MIC housed in a low-cost plastic drop-in package. A Darlington configuration is used for broadband performance from DC-3.5 GHz.


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    SLN-287 SLN-287 PDF

    Untitled

    Abstract: No abstract text available
    Text: na. TELEPHONE: 973 376-2802 (212) 287-6008 FAX: (973) 378-3060 . NEW JERSEY 07081 V.9A. 2N5613 7.5 AMPERE POWER TRANSISTOR PNP SILICON OIA.Q STYLE 1: PIN I. BASE 2. EMITTER CASE: COLLECTOR MAXIMUM RATING Rating Collector-Emitter Voltage Collector-Bale Voltage


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    2N5613 1IL64 PDF

    transistor 2SB 1567

    Abstract: 2sd 316
    Text: 2S B 1 5 8 0 / 2 S B 1 316 / 2 S B 1 5 6 7 / 2 S B 1 287 Transistors 2 S D 2 1 95 / 2S D 1 9 8 0 / 2 S D 1 8 6 7 / 2S D 2 3 9 8 / 2 S D 1 765 Power Transistor —100V, — 2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 1) 2) 3) 4) •A b s o lu te maximum ratings (Ta=25"C)


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    2SB1580 2SB1316 2SB1567 2SB1287 2195/2S 1980/2SD 2398/2SD 2SB1580 0Dlb713 O-220FN transistor 2SB 1567 2sd 316 PDF

    TRANSISTOR L 287 A

    Abstract: To5 transistor TO-5 window Cap TRANSISTOR 287 A "nickel cap" M5000 M5500 kovar TO5 transistor base transistor 808
    Text: GENERAL PURPOSE SENSORS GLASS-TO-METAL SEAL / TRANSISTOR BASE SENSORS TYPE M5000: Features • JEDEC “TO” style transistor base headers with flake thermistors suspended by their leads across the pins in a variety of electrical circuit configurations. • Flake thermistors are ideal for non-contact, infrared temperature


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    M5000: M5000 M5500 TRANSISTOR L 287 A To5 transistor TO-5 window Cap TRANSISTOR 287 A "nickel cap" kovar TO5 transistor base transistor 808 PDF

    Untitled

    Abstract: No abstract text available
    Text: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of


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    EA-043-111116 Room403, Room109, 10F-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of


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    EA-043-111116 Room403, Room109, PDF

    d 5287 transistor

    Abstract: GRM32ER71H106 8ph ZENER
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    SC4524 SC4524 d 5287 transistor GRM32ER71H106 8ph ZENER PDF

    GRM32ER71H106

    Abstract: transistor c 5287 d 5287 transistor ipc-SM-782 GRM32ER71H106K SC452 a7ap
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    SC4524 SC4524 IPC-SM-782A, GRM32ER71H106 transistor c 5287 d 5287 transistor ipc-SM-782 GRM32ER71H106K SC452 a7ap PDF

    transistor c 5287

    Abstract: d 5287 transistor 2A diode H C 5287 equivalent GRM32ER71H106K TRANSISTOR 2AW GRM32ER71H106 UAA2
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    SC4524 SC4524 transistor c 5287 d 5287 transistor 2A diode H C 5287 equivalent GRM32ER71H106K TRANSISTOR 2AW GRM32ER71H106 UAA2 PDF

    GRM32ER71H106K

    Abstract: d 5287 transistor 1N4148 20BQ030 SC4524 SC4524SETRT transistor A7a
    Text: SC4524 Programmable Frequency, 2A Output 30V Step-Down Switching Regulator POWER MANAGEMENT Description Features u u u u The SC4524 is an adjustable frequency peak currentmode step-down switching regulator with an integrated 2.3A, 30V switch. The SC4524 can be programmed up


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    SC4524 SC4524 IPC-SM-782A, GRM32ER71H106K d 5287 transistor 1N4148 20BQ030 SC4524SETRT transistor A7a PDF

    transistor 131-6

    Abstract: 4139 temperature TRANSISTOR K 314 p945
    Text: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH


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    EA-072-0006 transistor 131-6 4139 temperature TRANSISTOR K 314 p945 PDF

    transistor bD 288

    Abstract: TRANSISTOR 287 A transistor D 288 transistor bd 126 R339
    Text: 2SC D • ô23Sb05 0Q0M3M2 7 M S I E 6 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 T -3 3 -/? BD 287 BD 288 ° - BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to the metallic mounting area.


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    23Sb05 125min. 62702-D Q62702-D901 62902-B63 62902-B62 023SbQ5 23SbQS transistor bD 288 TRANSISTOR 287 A transistor D 288 transistor bd 126 R339 PDF

    Untitled

    Abstract: No abstract text available
    Text: L9958 Low RDSON SPI controlled H-Bridge Datasheet − production data Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Programmable current regulation peak threshold by SPI up to 8.6 A typ. Operating battery supply voltage 4.0 V to 28 V


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    L9958 16-bit PDF

    "RF Power Amplifier"

    Abstract: 2L TRANSISTOR Ni100 SD2932
    Text: STEVAL-TDR009V1 RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 650 W min. ■ Gain: 19.5 dB min.


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    STEVAL-TDR009V1 SD2932 AM01227v1 STEVAL-TDR009V1 SD2932 "RF Power Amplifier" 2L TRANSISTOR Ni100 PDF

    SD2942

    Abstract: sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177
    Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.


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    STEVAL-TDR010V1 SD2942 AM01227v1 STEVAL-TDR010V1 SD2942 sd2942 module "RF Power Amplifier" 2L TRANSISTOR CuMoCu Ni100 sd2942 108 NI 100 m177 PDF

    L6234

    Abstract: L6234PD
    Text: L6234 Three phase motor driver Features • Supply voltage from 7 to 52 V ■ 5 A peak current ■ RDSon 0.3 Ω typ. value at 25 °C ■ Cross conduction protection ■ TTL compatible driver ■ Operating frequency up to 150 kHz ■ Thermal shutdown ■ Intrinsic fast free wheeling diodes


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    L6234 L6234 L6234PD PDF

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR010V1 RF power amplifier demonstration board using: 2 x SD2942 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min. ■ Gain: 19.5 dB min.


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    STEVAL-TDR010V1 SD2942 AM01227v1 STEVAL-TDR010V1 SD2942 PDF

    2N3439

    Abstract: CP301
    Text: Chip Numbering System Chip Part Numbering System Š This specification defines the method for chip packing and part number identification. example: Small Signal NPN High Voltage Transistor Chip, 2N3439, Waffle Packed. CP301 2N3439 CT PACKING METHOD SEE OPTIONS ON FOLLOWING PAGES


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    2N3439, CP301 2N3439 15-February 14-May 2N3439 CP301 PDF

    tle84106

    Abstract: PG-SSOP-24-4 TLE84106EL 84106EL Hex-Half-Bridge-Driver tle8
    Text: Data Sheet, Rev. 1.0, April 2010 TLE84106EL Hex-Half-Bridge Driver IC Automotive Power TLE84106EL Hex Half Bridge IC Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    TLE84106EL TLE84106EL tle84106 PG-SSOP-24-4 84106EL Hex-Half-Bridge-Driver tle8 PDF

    BGR420

    Abstract: sot343fp
    Text: D a t a S h e e t , R e v . 1 . 0 , J u n i 2 00 8 BGR420 NPN Silicon RF Transistor With Bias Circuitry S m a l l S i g n a l D i s c r et e s Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2008.


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    BGR420 BGR420 OT343-PO OT343 OT343-FP OT323-TP sot343fp PDF

    bgr405

    Abstract: No abstract text available
    Text: D a t a S h e e t , R e v . 1 . 0 , J u n i 2 00 8 BGR405 NPN Silicon RF Transistor With Bias Circuitry S m a l l S i g n a l D i s c r et e s Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2008.


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    BGR405 BGR405 OT343-PO OT343 OT343-FP OT323-TP PDF

    SC4503WLTRT

    Abstract: SC4503EVB SC4503TSKTRT inpower SC4503 IR 10BQ015 8 pin 4v power supply converter tapped inductor boost converter 10BQ015 GRM21BR61C475K
    Text: SC4503 1.3MHz Step-Up Switching Regulator with 1.4A Switch POWER MANAGEMENT Description Features The SC4503 is a 1.3MHz current-mode step-up switching regulator with an integrated 1.4A power transistor. Its high switching frequency allows the use of tiny surface-mount external passive components. The SC4503


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    SC4503 SC4503 260mV SC4503WLTRT SC4503EVB SC4503TSKTRT inpower IR 10BQ015 8 pin 4v power supply converter tapped inductor boost converter 10BQ015 GRM21BR61C475K PDF

    BH00

    Abstract: GRM21BR61C VLF40
    Text: SC4503 1.3MHz Step-Up Switching Regulator with 1.4A Switch POWER MANAGEMENT Description Features The SC4503 is a 1.3MHz current-mode step-up switching regulator with an integrated 1.4A power transistor. Its high switching frequency allows the use of tiny surface-mount external passive components. The SC4503


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    SC4503 TSOT-23 SC450GEMENT BH00 GRM21BR61C VLF40 PDF

    9452

    Abstract: L6226 SO24 schematic diagram reverse forward motor
    Text: L6226 DMOS dual full bridge driver Features • Operating supply voltage from 8 to 52 V ■ 2.8 A output peak current 1.4 A DC ■ RDS(on) 0.73 Ω typ. value @ TJ = 25 °C ■ Operating frequency up to 100 kHz ■ Programmable high side overcurrent detection


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    L6226 L6226 9452 SO24 schematic diagram reverse forward motor PDF