TRANSISTOR 2E Search Results

TRANSISTOR 2E Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SD2696 Abstract: EMX28 Text: EMX28 Transistors Low frequency transistor, complex 2-elements Bipolar Transistor EMX28 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package.	Original	EMX28 2SD2696 300mA 100mA EMX28	PDF
2SD2696 Abstract: EMX28 Text: Low frequency transistor Complex 2-elements Bipolar Transistor EMX28 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. Collector saturation voltage is low.	Original	EMX28 2SD2696 300mA 100mA R0039A EMX28	PDF
LDO sot23 Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181 Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver	Original	com/an1861 MAX1735: AN1861, APP1861, Appnote1861, LDO sot23 APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181	PDF
tyco igbt Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit Text: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung	Original	V23990-P361-F D81359 tyco igbt P361 ntc thermistor 500 ohm SPWM Inverter circuit	PDF
486DX-CPU Abstract: tamagawa 486DX transistors mos retrograde well 0.35 Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling	Original		PDF
NTC 220-11 Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,	Original	transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide	PDF
RF Power transistor Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132 Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting	Original	BLV59, BLV59 RF Power transistor TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132	PDF
Untitled Abstract: No abstract text available Text: KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage : KST92 : KST93 Collector-Emitter Voltage : KST92 : KST93 Emitter-Base Voltage Collector Current Collector Dissipation	Original	KST92/93 OT-23 KST92 KST93 KSP92/93 KST93	PDF
2SC1275 Abstract: 2sc1927 Text: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.	Original	2SC1927 2SC1275, 2SC1927 2SC1275	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2sc1275 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that	OCR Scan	2SC1927 2SC1927 2SC1275, 2sc1275	PDF
BSY59 Abstract: TRANSISTOR W 59 Text: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.	OCR Scan	BSY59 BSY59 -S157 TRANSISTOR W 59	PDF
2SC1275 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters	OCR Scan	2SC1927 2SC1927 2SC1275, 2SC1275	PDF
2SC1733 Abstract: 2SC1275 2SC127 Text: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two	OCR Scan	2SC1733 2SC1733 2SC1275 2SC127	PDF

transistor tic 106 Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245 Text: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.	OCR Scan	BCY66 BCY66 60203-Y transistor tic 106 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245	PDF
11105 IC Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5 Text: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code	OCR Scan	BFS17 OT-23) Q62702-F337 11105 IC npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5	PDF
BCY67 Abstract: HTI 2E 101S Q62702-C254 Text: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in	OCR Scan	BCY67 BCY67 10ZkHz HTI 2E 101S Q62702-C254	PDF
BFX60 Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier Text: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier	OCR Scan	BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	Lb53T31 0Dm03L. BLX91A D01404S 7Z68928	PDF
k 319 Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55 Text: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar	OCR Scan	BFS55 BFS55 62702-F272 p21e--+ k 319 Q62702-F272 A 798 transistor transistor H 802	PDF
smd transistor JJ Abstract: t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14 Text: Philips Semiconductors Preliminary specification UHF power transistor BLT14 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic SOT96-1 S08 SMD package. • High gain • Internal pre-matched input.	OCR Scan	BLT14 OT96-1 MAM227 711062b OT96-1. smd transistor JJ t8 smd transistor smd NE mbc1B transistor 75 U50 BLT14	PDF
transistor buv 90 Abstract: BCY 85 Q60203-Y66 BCY 66 Text: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).	OCR Scan	Q60203-Y66 transistor buv 90 BCY 85 Q60203-Y66 BCY 66	PDF
TRANSISTOR BO 346 Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296 Text: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz	OCR Scan	BFX89 BFX89 Q62702-F296 TRANSISTOR BO 346 case BFX89 Power Transisitor 100V 2A Q62702-F296	PDF
Untitled Abstract: No abstract text available Text: BUD600 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RBSOA	OCR Scan	BUD600 BUD600-SMD 20-Jan-99	PDF

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TRANSISTOR 2E Search Results

TRANSISTOR 2E Result Highlights (5)

TRANSISTOR 2E Datasheets Context Search

2SD2696

2SD2696

LDO sot23

tyco igbt

486DX-CPU

NTC 220-11

RF Power transistor

Untitled

2SC1275

la 4440 amplifier circuit diagram 300 watt

2sc1275

BSY59

2SC1275

2SC1733

transistor tic 106

11105 IC

BCY67

BFX60

Untitled

k 319

smd transistor JJ

transistor buv 90

TRANSISTOR BO 346

Untitled