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    TRANSISTOR 2N3553 Search Results

    TRANSISTOR 2N3553 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N3553 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


    Original     		PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    2N3553

    Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
    Text: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver


    Original     		PDF 2N3553 2N3553 175MHz, 100mA, 100MHz 100kHz 175MHz 250mA, 20html 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic

    multi-emitter transistor

    Abstract: 2NS553 2n3553
    Text: <Se.mi- Conductor ^Products., Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 TYPE 2N3553 VHP Silicon NPN Power Transistor The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal,


    Original     		PDF 2N3553 2N3553 400MC) 2NS553 200mA* 250mA 100mA multi-emitter transistor

    2N3553

    Abstract: TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


    Original     		PDF 2N3553 SC08a 2N3553 O-39/3 MBB199 TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke

    2N3553

    Abstract: 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor
    Text: 2N3553 MECHANICAL DATA Dimensions in mm inches NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)


    Original     		PDF 2N3553 2N3553 205AD) 100kHz 100MHz 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    2N3553

    Abstract: DATA TRANSISTOR
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 65.0 V NO. 2N3553 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 4.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


    Original     		PDF 2N3553 2N3553 DATA TRANSISTOR

    2N3553

    Abstract: 2N3553 NPN 2N3553 equivalent transistor 2n3553
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS IC 1.0 A VCE 40 V PDISS 7.0 W @ TC = 25 C O O O O O TJ -65 C to +200 C


    Original     		PDF 2N3553 2N3553 2N3553 NPN 2N3553 equivalent transistor 2n3553

    2N3553

    Abstract: 2N3553 motorola U028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3553 2.5 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed for amplifier and oscillator applications in m ilitary and industrial equipment. Suitable for use as output, driver or pre­


    OCR Scan     		PDF 2N3553 2N3553 2N3553 motorola U028

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		PDF 2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor

    Untitled

    Abstract: No abstract text available
    Text: m 2N3553 \ \ NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE T O -39 8 .8 9 0 - 9 .398 0.315- 0.335 (8.001- 8 .509) T MAXIMUM RATINGS 1.0 A lc V


    OCR Scan     		PDF 2N3553 2N3553

    2N3553

    Abstract: No abstract text available
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g


    OCR Scan     		PDF 2N3553

    2N3553

    Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
    Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		PDF bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor

    2n3375

    Abstract: 2n3375 transistor 2N3553
    Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes


    OCR Scan     		PDF 2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		PDF 2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		PDF 108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503