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    TRANSISTOR 2SA1013 Search Results

    TRANSISTOR 2SA1013 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1013 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2sa1013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original     		2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original     		2SA1013 2SA1013 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B 2SA1013G-x-T9N-B PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original     		2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    Untitled

    Abstract: No abstract text available
    Text: ST 2SA1013L PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit


    Original     		2SA1013L O-92L PDF

    2SA1013L

    Abstract: No abstract text available
    Text: ST 2SA1013L PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit


    Original     		2SA1013L O-92L 2SA1013L PDF

    transistor 2sa1013

    Abstract: 2SA1013
    Text: ST 2SA1013 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92L Plastic Package


    Original     		2SA1013 O-92L 200mA 500mA, transistor 2sa1013 2SA1013 PDF

    2SA1013

    Abstract: transistor 2sa1013
    Text: ST 2SA1013 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92L Plastic Package


    Original     		2SA1013 O-92L 200mA 500mA, 2SA1013 transistor 2sa1013 PDF

    2sA1013 equivalent

    Abstract: 2SA1013
    Text: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2SA1013 200mA 500mA, 2sA1013 equivalent 2SA1013 PDF

    2SA1013

    Abstract: 2sA1013 equivalent transistor TO-92 pnp
    Text: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2SA1013 200mA 500mA, 2SA1013 2sA1013 equivalent transistor TO-92 pnp PDF

    transistor 2sa1013

    Abstract: 2SA1013
    Text: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		2SA1013 200mA 500mA, transistor 2sa1013 2SA1013 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 2. COLLECTOR


    Original     		O-92MOD 2SA1013 O-92MOD -160V 2SC2383 200mA -500m -50mA -200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE y High voltage:VCEO=-160V y Large continuous collector current capability y Complementary to 2SC2383 2. COLLECTOR


    Original     		O-92MOD 2SA1013 O-92MOD -160V 2SC2383 200mA -500m -50mA -200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2383 TO-92MOD TRANSISTOR NPN FEATURE y High Voltage: VCEO=160V y Large Continuous Collector Current Capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR


    Original     		O-92MOD 2SC2383 O-92MOD 2SA1013 200mA PDF

    2SC2383

    Abstract: 2SC2383 equivalent 2SA1013 2SC2383 NPN Transistor 2sA1013 equivalent
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2383 TO-92M TRANSISTOR NPN FEATURE y High voltage: VCEO=160V y Large continuous collector current capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR


    Original     		O-92MOD 2SC2383 O-92M 2SA1013 200mA 2SC2383 2SC2383 equivalent 2SA1013 2SC2383 NPN Transistor 2sA1013 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1013 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● High Voltage：VCEO= -160V ● Large Continuous Collector Current Capability ● Complementary to 2SC2383


    Original     		2SA1013 -160V 2SC2383 O-92L -200mA 02-Apr-2010 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    2SA1013

    Abstract: 2sc2383 transistor 2sa1013
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1013 TRANSISTOR TO-92L PNP 1. EMITTER FEATURE y High voltage:VCEO=-160V y Large continuous collector current capability y Complementary to 2SC2383 2. COLLECTOR 3. BASE


    Original     		O-92L 2SA1013 O-92L -160V 2SC2383 200mA -500m -50mA -200mA 2SA1013 2sc2383 transistor 2sa1013 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1013 TRANSISTOR TO-92L PNP 1. EMITTER FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 2. COLLECTOR 3. BASE


    Original     		O-92L 2SA1013 O-92L -160V 2SC2383 200mA -500m -50mA -200mA PDF

    2SA1013

    Abstract: 2sa1013y transistor 2sa1013 2SA1013-Y 2sA1013 equivalent 2SC2383 2SA1013-O 2SA1013-R 2SA-1013 2SA1013 TO92-L
    Text: 2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L High Voltage：VCEO= -160V Large Continuous Collector Current Capability Complementary to 2SC2383


    Original     		2SA1013 -160V O-92L 2SC2383 2SA1013-R 2SA1013-O 2SA1013-Y -500mA, -50mA 2SA1013 2sa1013y transistor 2sa1013 2SA1013-Y 2sA1013 equivalent 2SC2383 2SA1013-O 2SA1013-R 2SA-1013 2SA1013 TO92-L PDF

    2sc2383 transistor

    Abstract: 2SC2383 equivalent transistor 2sc2383 2SA1013 2SC2383 VCEO160V
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2383 TRANSISTOR NPN 1. EMITTER FEATURE y High voltage: VCEO=160V y Large continuous collector current capability y Complementary to 2SA1013 2. COLLECTOR 3. BASE


    Original     		O-92L O-92L 2SC2383 2SA1013 200mA 2sc2383 transistor 2SC2383 equivalent transistor 2sc2383 2SA1013 2SC2383 VCEO160V PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2383 TO-92L TRANSISTOR NPN FEATURE y High Voltage: VCEO=160V y Large Continuous Collector Current Capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR 3. BASE


    Original     		O-92L 2SC2383 O-92L 2SA1013 200mA PDF