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    TRANSISTOR 2SA608 Search Results

    TRANSISTOR 2SA608 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA608 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212 PDF

    2SA608N

    Abstract: No abstract text available
    Text: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to


    Original     		2SA608N 100mA, 2SA608N PDF

    2SA608N

    Abstract: No abstract text available
    Text: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to


    Original     		2SA608N 100mA, 2SA608N PDF

    2SA608N

    Abstract: No abstract text available
    Text: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ˙Capable of being used in the low frequency to


    Original     		2SA608N 100mA, 2SA608N PDF

    2SA608N

    Abstract: No abstract text available
    Text: ST 2SA608N PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor is subdivided into two groups F and G according to its DC current gain. Applications: ․Capable of being used in the low frequency to


    Original     		2SA608N 100mA, 2SA608N PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA608S TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z General Purpose Switching Application 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		O-92S 2SA608S -50mA -10mA PDF

    2SA608

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage


    Original     		2SA608 -50mA, -10mA 2SA608 PDF

    2SA608S

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage


    Original     		O-92S 2SA608S O-92S -50mA, -10mA 2SA608S PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage


    Original     		2SA608 -50mA, -10mA PDF

    2SA608N

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -60


    Original     		2SA608N -100mA, -10mA 2SA608N PDF

    C536 NPN TRANSISTOR

    Abstract: C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536
    Text: Ordering number : EN6324B 2SA608N/2SC536N Bipolar Transistor http://onsemi.com – 50V, (–)150mA, Low VCE(sat) (PNP)NPN Single NPA-WA Applicaitons • Capable of being used in the low frequency to high frequency range Features • Large current capacity and wide ASO


    Original     		EN6324B 2SA608N/2SC536N 150mA, 2SA608N C536 NPN TRANSISTOR C536 transistor transistor C536 A608 transistor pnp transistor A608 2SA608N 2SC536NF-NPA-AT transistor npn C536 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA608N TRANSISTOR PNP 1. EMITTER FEATURES z Large Current Capacity and Wide ASO. 2. COLLECTOR 3. BASE APPLICATIONS z Capable of Being Used in The Low Frequency to High


    Original     		2SA608N -100mA -10mA PDF

    2SA608S

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40


    Original     		O-92S 2SA608S O-92S -50mA, -10mA 2SA608S PDF

    2sa608

    Abstract: transistor 2sA608 2SA608F 2SA608G 2SA608e 2SA608-E 2SA608-F 2SA608 C k 1 transistor 2SA608 D
    Text: 2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO.


    Original     		2SA608 2SA608-D 2SA608-E 2SA608-F 2SA608-G -100A, -50mA, -10mA 2sa608 transistor 2sA608 2SA608F 2SA608G 2SA608e 2SA608-E 2SA608-F 2SA608 C k 1 transistor 2SA608 D PDF

    2SA608N

    Abstract: 2SA608NF
    Text: 2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Large current capacity and wide ASO. G H APPLICATIONS  Capable of being used in the low frequency to


    Original     		2SA608N 2SA608N-F 2SA608N-G 26-Jan-2011 -100mA, -10mA 2SA608N 2SA608NF PDF

    2SA608

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V


    Original     		2SA608 -50mA, -10mA 2SA608 PDF

    2SA608S

    Abstract: No abstract text available
    Text: 2SA608S 2SA608S TO-92S TRANSISTOR PNP FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM : 300 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		2SA608S O-92S -50mA, -10mA 2SA608S PDF

    2SA608N

    Abstract: No abstract text available
    Text: 2SA608N 2SA608N TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.15 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		2SA608N -100mA, -10mA 2SA608N PDF

    2sa608

    Abstract: transistor 2sa608 2SA608 D
    Text: 2SA608 2SA608 TRANSISTOR PNP TO-92 FEATURES 1. EMITTER Power dissipation PCM : 2. COLLECTOR 400 mW (Tamb=25℃) 3. BASE Collector current ICM : -100 mA Collector-base voltage V(BR)CBO : -40 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		2SA608 -50mA, -10mA 2sa608 transistor 2sa608 2SA608 D PDF