TRANSISTOR 2SB1386 Search Results

TRANSISTOR 2SB1386 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2SB1386 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES Excellent DC current gain characteristics Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)	Original	2SB1386 2SB1386 OT-89 Figure12 QW-R208-019	PDF
Untitled Abstract: No abstract text available Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES Excellent DC current gain characteristics Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)	Original	2SB1386 2SB1386 OT-89 QW-R208-019	PDF
transistor smd bh Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386 Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit	Original	2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)  ORDERING INFORMATION Order Number 2SB1386G-x-AB3-R	Original	2SB1386 2SB1386G-x-AB3-R OT-89 QW-R208-019	PDF
2SB1386 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L	Original	2SB1386 OT-89 2SB1386L 2SB1386-x-AB3-F-R 2SB1386L-x-AB3-F-R QW-R208-019 2SB1386	PDF
2SB1386 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION	Original	2SB1386 OT-89 2SB1386L 2SB1386-x-AB3-R 2SB1386L-x-AB3-R QW-R208-019 2SB1386	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 ORDERING INFORMATION Order Number Lead Free	Original	2SB1386 OT-89 2SB1386L-x-AB3-R 2SB1386G-x-AB3-R OT-89 QW-R208-019	PDF
2SB1386U Abstract: ST2SB1386U Text: ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC	Original	2SB1386U OT-89 2SB1386U ST2SB1386U	PDF
marking BHR Abstract: BHR SOT89 2SB1386 TRANSISTOR br bhr Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES z Low collector saturation voltage, z Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	OT-89 2SB1386 -500mA -100mA -50mA 30MHz marking BHR BHR SOT89 2SB1386 TRANSISTOR br bhr	PDF
d204 transistor Abstract: D204 2SD2166 2SB1412 2SB1436 2SD2097 2SD2098 2SD2118 transistors 96-229-D204 Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /	Original	2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) d204 transistor D204 2SD2166 2SB1436 transistors 96-229-D204	PDF
Untitled Abstract: No abstract text available Text: SOT-89 Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR PNP FEATURES ∙ Low collector saturation voltage,typically VCE(sat)=-0.35V ∙ Execllent current-to-gain characteristics MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units	Original	OT-89 2SB1386 -500mA -100mA -50mA 30MHz	PDF
transistor Abstract: B204 2SB1412 2sb1386 2SD2098 hFE is transistor 2SD2166 2SB1436 2SB1326 data sheet transistor PNP Text: Transistors Low Frequency Transistor 20V,5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	Original	2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor B204 hFE is transistor 2SD2166 2SB1436 data sheet transistor PNP	PDF
2SD2098 Abstract: D204 2SD2166 2SB1386 2SB1436 d204 transistor sit transistor 2SB1412 2SD2118 2SB1326 Text: Transistors Low VCE sat Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 /	Original	2SD2098 2SD2118 2SD2097 2SD2166 2SB1386 2SB1412 2SB1326 2SB1436. 96-229-D204) D204 2SD2166 2SB1436 d204 transistor sit transistor	PDF
2SB1412 Abstract: 2SB1386 2SB1326 transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204 2SD2097 Text: Transistors Low Frequency Transistor 20V,5A 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436 FFeatures 1) Low VCE(sat). VCE(sat) = 0.35V (Typ.) (IC / IB = 4A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.	Original	2SB1386 2SB1412 2SB1326 2SB1436 2SD2098 2SD2118 2SD2097 2SD2166. 96-141-B204) transistor 2SB1386 B204 2SB1436 2SD2166 transistors 96-141-B204	PDF

2SB1386 Abstract: 2SB1412 2SD2098 2SD2118 T100 catalog transistor Text: 2SB1386 / 2SB1412 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118.	Original	2SB1386 2SB1412 2SD2098 2SD2118. 2SB1386 SC-62 SC-63 2SB1412 2SD2118 T100 catalog transistor	PDF
2SB1386PGP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)	Original	2SB1386PGP -10mA -40mA -35mA -30mA -25mA -20mA -15mA -50mA -45mA 2SB1386PGP	PDF
transistor p86 Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)	Original	2SB1386PPT -10mA -40mA -35mA -30mA -25mA -20mA -15mA -50mA -45mA transistor p86	PDF
2SB1386 Abstract: 2SB1412 2SD2098 2SD2118 T100 PW500 Text: 2SD2098 / 2SD2118 Transistors Low VCE sat transistor (strobe flash) 2SD2098 / 2SD2118 zDimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412.	Original	2SD2098 2SD2118 2SB1386 2SB1412. 2SD2098 SC-62 SC-63 2SB1412 2SD2118 T100 PW500	PDF
bhr sot-89 Abstract: No abstract text available Text: WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR PNP design, excellent power dissipation offers	Original	OT-89 OD-123+ 060TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH bhr sot-89	PDF
2sb132 Abstract: 2SB1326 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100 Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 zExternal dimensions (Unit : mm) 2SB1412 (1) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 0.4+0.1 −0.05 C0.5 0.65±0.1 0.75 0.55±0.1 0.4±0.1 1.5±0.1 2.3±0.2	Original	2SB1386 2SB1412 2SB1326 2SB1412 SC-62 SC-63 2sb132 2SB1326 2SD2097 2SD2098 2SD2118 T100	PDF
Untitled Abstract: No abstract text available Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV	Original	2SB1386 2SB1412 2SB1326 2SD2098 2SD2118 2SD2097. 2SB1386	PDF
2SB1326 Abstract: 2SB1386 2SB1412 2SD2097 2SD2098 2SD2118 T100 Text: 2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor −20V, −5A 2SB1386 / 2SB1412 / 2SB1326 !External dimensions (Units : mm) 0.4±0.1 1.5±0.1 (2) (3) 0.5±0.1 +0.1 0.4−0.05 2SB1326 4.4±0.2 0.9 (2) 14.5±0.5 (3) 2.54 2.54 1.05 ROHM : ATV	Original	2SB1386 2SB1412 2SB1326 SC-63 65Max. SC-62 2SB1326 2SD2097 2SD2098 2SD2118 T100	PDF
SOT89 transistor marking 5A Abstract: 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23 Text: 2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Low VCE sat Excellent DC current gain characteristics Complements the 2SD2098 4 1 2	Original	2SB1386 OT-89 2SD2098 2SB1386-P 2SB1386-Q 2SB1386-R -50mA, 30MHz 10-Dec-2010 SOT89 transistor marking 5A 2SB1386R marking BHR SOT89 transistor marking 4A 2SB1386 2SD2098 2SB1386-R bhr sot-89 marking BHp SOT-23	PDF
2SB1386 Abstract: MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k Text: 2SB1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER Features: 1 2 3 SOT-89 * Excellent DC Current Gain Characteristics * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Symbol Value	Original	2SB1386 OT-89 28-Oct-05 OT-89 500TYP 2SB1386 MARKING PB SOT-89 bhr sot-89 SOT-89 marking 5k	PDF

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TRANSISTOR 2SB1386 Search Results

TRANSISTOR 2SB1386 Result Highlights (5)

TRANSISTOR 2SB1386 Datasheets Context Search

Untitled

Untitled

transistor smd bh

Untitled

2SB1386

2SB1386

Untitled

2SB1386U

marking BHR

d204 transistor

Untitled

transistor

2SD2098

2SB1412

2SB1386

2SB1386PGP

transistor p86

2SB1386

bhr sot-89

2sb132

Untitled

2SB1326

SOT89 transistor marking 5A

2SB1386