TRANSISTOR 2SC Search Results

TRANSISTOR 2SC Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2SC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TV power transistor datasheet Abstract: power transistor 2SD2599 equivalent 2SC5411 transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855 Text: Part Number Product Category Application Scope 2SC5280 Horizontal Deflection Output Power Transistor Color 2SC5339 Horizontal Deflection Output Power Transistor Color 2SC5386 Horizontal Deflection Output Power Transistor Color 2SC5387 Horizontal Deflection Output Power Transistor	Original	2SC5280 2SC5339 2SC5386 2SC5387 2SC5404 2SC5411 2SC5421 2SC5422 2SC5445 2SC5446 TV power transistor datasheet power transistor 2SD2599 equivalent transistor 2sd2499 transistor 2Sc5858 equivalent 2SC5570 components in horizontal output 2SC5855	PDF
D1486 Abstract: 2SC4342 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SC4342 2SC4342 O-126 D1486	PDF
2SC3603 Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	2SC3603 2SC3603	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	2SC3603 2SC3603	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC 3587 is an NPN epitaxial transistor designed for lownoise am plification at 0.5 to 6.0 GHz. This transistor has low-noise	OCR Scan	2SC3587	PDF
2SC4550 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4550 2SC4550	PDF
NEC 2sc4552 Abstract: 2SC4552 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4552 2SC4552 NEC 2sc4552	PDF
NEC K 2500 Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150 Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise	OCR Scan	2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150	PDF
2SC2150 Abstract: 2SC1223 TRANSISTOR 2sC 5250 2sc3604 micro X Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise	OCR Scan	2SC3604 2SC3604 2SC3603 2SC2150 2SC1223 TRANSISTOR 2sC 5250 micro X	PDF
2SC4551 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4551 2SC4551	PDF
PT 4304 a transistor Abstract: 2SC3587 noise diode Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise	Original	2SC3587 2SC3587 PT 4304 a transistor noise diode	PDF
transistor NEC D 586 Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500 Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise	OCR Scan	2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
2SC4351 Abstract: No abstract text available Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for	Original	2SC4351 2SC4351	PDF

2SC4811 Abstract: No abstract text available Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.	Original	2SC4811 2SC4811	PDF
d1560 Abstract: 2SC4810 darlington transistor for audio power application Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4810 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4810 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.	Original	2SC4810 2SC4810 d1560 darlington transistor for audio power application	PDF
2SC4813 Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4813 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.	Original	2SC4813 2SC4813	PDF
2SC4814 Abstract: 2Sc4814 equivalent Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for	Original	2SC4814 2SC4814 2Sc4814 equivalent	PDF
2SC2312 Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating	OCR Scan	2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb	PDF
JAPAN transistor Abstract: 96-529-BD11 Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.	Original	2SA1036K 2SC411K 500mA 96-529-BD11) JAPAN transistor 96-529-BD11	PDF
transistor Abstract: 2SC411K transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.	Original	2SA1036K 2SC411K 500mA 96-529-BD11) curvesC411K transistor transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v	PDF
DEVICE T76 Abstract: 2SC4571 2SC4571-T1 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4571 NPN EPITAXIAL SILICON RF TRANSISTOR FOR UHF TUNER OSC/MIX 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied super minimold	Original	2SC4571 2SC4571 2SC4571-T1 DEVICE T76 2SC4571-T1	PDF
2SC945 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor.  FEATURES * Collector-Emitter voltage:	Original	2SC945 2SC945 150mA 2SA733 2SC945L-x-T92-B 2SC945G-x-T92-B 2SC945L-x-T92-K 2SC945G-x-T92-K QW-R201-005	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR  DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.  FEATURES * Humidifier, DC-DC converter, and general purpose  ORDERING INFORMATION	Original	2SC3834 2SC3834 2SC3834L-TA3-T 2SC3834G-TA3-T O-220 2SC3834L-T3P-T 2SC3834G-T3P-T QW-R203-026	PDF

TRANSISTOR 2SC Search Results

TRANSISTOR 2SC Result Highlights (5)

TRANSISTOR 2SC Datasheets Context Search

TV power transistor datasheet

D1486

2SC3603

Untitled

Untitled

2SC4550

NEC 2sc4552

NEC K 2500

2SC2150

2SC4551

PT 4304 a transistor

transistor NEC D 586

MN1280

2SC4351

2SC4811

d1560

2SC4813

2SC4814

2SC2312

JAPAN transistor

transistor

DEVICE T76

2SC945

Untitled