2SC1008
Abstract: TRANSISTOR 2sc1008
Text: PST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be
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2SC1008
2SC1008
TRANSISTOR 2sc1008
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Untitled
Abstract: No abstract text available
Text: 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be
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2SC1008
500mA,
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2SC1008
Abstract: TRANSISTOR 2sc1008 st2sc1008 ic CD4081 pin diagram datasheet
Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be
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2SC1008
2SC1008
TRANSISTOR 2sc1008
st2sc1008
ic CD4081 pin diagram datasheet
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2SC1008
Abstract: No abstract text available
Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be
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2SC1008
2SC1008
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2SC1008
Abstract: TRANSISTOR 2sc1008
Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. On special request, these transistors can be
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2SC1008
2SC1008
TRANSISTOR 2sc1008
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2SC1008
Abstract: 2SC1008 equivalent TRANSISTOR 2sc1008
Text: ST 2SC1008 NPN Silicon Epitaxial Planar Transistor for medium speed switching and low frequency amplifier applications. The transistor is subdivided into three groups, R, O, Y,and G according to its DC current gain. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package
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2SC1008
2SC1008
2SC1008 equivalent
TRANSISTOR 2sc1008
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2SC1008
Abstract: 2SC1008Y TRANSISTOR 2sc1008 2SC1008-Y 2SC1008 equivalent 2sc1008y transistor 2SC1008G 2SC1008-G
Text: 2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification. G H Emitter Base Collector
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2SC1008
2SC1008-R
2SC1008-Q
2SC1008-Y
2SC1008-G
14-Feb-2011
500mA,
2SC1008
2SC1008Y
TRANSISTOR 2sc1008
2SC1008 equivalent
2sc1008y transistor
2SC1008G
2SC1008-G
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1008 TRANSISTOR NPN 1. EMITTER 2. BASE FEATURES z General Purpose Switching and Amplification 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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2SC1008
500mA
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2SC1008
Abstract: TRANSISTOR 2sc1008 NPN transistor 500ma TO-92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80
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2SC1008
500mA,
2SC1008
TRANSISTOR 2sc1008
NPN transistor 500ma TO-92
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR(NPN ) TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W(Tamb=25℃) Collector current ICM : 0.7 A Collector-base voltage V BR CBO : 80
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2SC1008
270TYP
050TYP
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2SC1008
Abstract: No abstract text available
Text: WEITRON 2SC1008 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Units VCBO ICM PCM TJ Tstg 80 0.7 0.8 -55 to +150 -55 to +150 V A W °C °C
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2SC1008
15-Feb-2011
270TYP
2SC1008
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2SC1008
Abstract: 2SC1008 equivalent TRANSISTOR 2sc1008
Text: 2SC1008 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃
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2SC1008
500mA,
2SC1008
2SC1008 equivalent
TRANSISTOR 2sc1008
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2SC1008
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1008 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 0.8 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.7 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range
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2SC1008
500mA,
2SC1008
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Untitled
Abstract: No abstract text available
Text: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1008 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR L O W F R E Q U E N C Y A M P L IF IE R M E D IU M S P E E D S W IT C H IN G * * * * Package: TO-92 Complement to 2SA708 High Collector-Base Voltage VCBO=80V
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2SC1008
2SA708
700mA
800mW
100uA
500mA
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor cross reference
Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER
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OT-23
S9011
S9012
S9013
S9014
S9015
S9016
S9018
S8050
S8550
transistor cross reference
transistor c1008
npn transistor c1008
NPN C1008
s8550 npn
SS8550 cross reference
S9014 cross reference
c1008 transistor
s9014 equivalent
S8050 equivalent
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • NPN Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SC1008-R
2SC1008-O
2SC1008-Y
2SC1008-G
C1008
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transistor c1008
Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 npn c1008 2SC1008Y 2SC1008-Y
Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • NPN Silicon Epitaxial Transistor Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SC1008-R
2SC1008-O
2SC1008-Y
2SC1008-G
C1008
10mAdc,
transistor c1008
c1008 transistor
2SC1008
C1008 Y
npn transistor c1008
npn c1008
2SC1008Y
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2SC1008
Abstract: 2SC1008A TRANSISTOR 2sc1008 160 e7 L008A
Text: 2SC1008, 1008A 2SC1008, 1008A b ÿ ' s i / Z ÿ / N P N SILICON EPITAXIAL TRANSISTOR npn t p îÈ IÊ X 'i Lo w Frequency A m p lifie r, M edium Speed S w itch in g i f i l H f f l / l n d u s t r i a l U se J: V , • t 'iS S X 4 -, f - v / f f l £ L 2SC1008, 1008A Ü , Æ M & ü 'f i f c
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2SC1008,
2SC1008
2SC1008A
2SC1008)
2SC1008A)
160TYP.
120TYP.
TRANSISTOR 2sc1008
160 e7
L008A
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2SC1116A
Abstract: transistor 431A transistor tl 431A h a 431a transistor 2SC1619A 2SA119 2SC1008A 2SC16 2SC1517A SI 7300
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SCU03A
2SC1116A
tc-25t
2SC1619A
100MHz,
2SC1775A
transistor 431A
transistor tl 431A
h a 431a transistor
2SA119
2SC1008A
2SC16
2SC1517A
SI 7300
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transistor c1008
Abstract: c1008 transistor npn transistor c1008 2sc1008 C1008 Y TRANSISTOR 2sc1008
Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SC1008-R
2SC1008-O
2SC1008-Y
2SC1008-G
C1008
10mAdc,
100uAdc,
transistor c1008
c1008 transistor
npn transistor c1008
2sc1008
C1008 Y
TRANSISTOR 2sc1008
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transistor c1008
Abstract: c1008 transistor 2SC1008 C1008 Y npn transistor c1008 2SC1008Y 2SC1008-O TRANSISTOR 2sc1008 npn c1008
Text: MCC TM Micro Commercial Components 2SC1008-R 2SC1008-O 2SC1008-Y 2SC1008-G omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • Lead Free Finish/RoHS Compliant "P" Suffix designates
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2SC1008-R
2SC1008-O
2SC1008-Y
2SC1008-G
C1008
10mAdc,
100uAdc,
transistor c1008
c1008 transistor
2SC1008
C1008 Y
npn transistor c1008
2SC1008Y
TRANSISTOR 2sc1008
npn c1008
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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