TRANSISTOR 2SC2526 Search Results

TRANSISTOR 2SC2526 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2SC2526 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2Sc2525 Abstract: 2SC2526 Text: January 1990 Edition 1.1 — - FUJITSU PRODUCT PROFILE 2SC2525, 2SC2526 Silicon High Speed Power Transistor DESCRIPTION T h e 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon N P N general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor { R E T te c h	OCR Scan	2SC2525, 2SC2526 2SC2526 2Sc2525	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
TRANSISTOR 2Sc 2525 Abstract: 2SC2526 2SC 2625 transistor TRANSISTOR 2sc2526 2SC2525 2sa1075 2SA1076 transistor 2sc 18 2SC2625 RM601 Text: FUJITSU MICROELECTRONICS 31E S J> 374m2 001LS50 1 H F M I r - 33-13 January 1990 Edition 1.1 - cO FUJITSU P R O D U C T P R O F IL E : 2SC2525,2SC2526 Silicon High Speed Power Transistor DESCRIPTION T h o 2 S C 2 6 2 5 / 2 S C 2 5 2 6 are silico n N PN general p u rpose, high pow er sw itch in g	OCR Scan	37Mm2 D01tS20 2SC2525, 2SC2526 2625/2SC 2SC2526/2SC2526 300ji T-33-13 TRANSISTOR 2Sc 2525 2SC2526 2SC 2625 transistor TRANSISTOR 2sc2526 2SC2525 2sa1075 2SA1076 transistor 2sc 18 2SC2625 RM601	PDF
TRANSISTOR 2SA1076 Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS Text: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power	OCR Scan	2SA1075 2SA1076 2SA1075/2SA1076 2SC25251 2SC2526, O-220 TRANSISTOR 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS	PDF
2SB415 Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~	OCR Scan	4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362	PDF